Betavoltaic battery with a shallow junction and a method for making same
This is a novel SiC betavoltaic device (as an example) which comprises one or more “ultra shallow” P+ N − SiC junctions and a pillared or planar device surface (as an example). Junctions are deemed “ultra shallow”, since the thin junction layer (which is proximal to the device's radioactive source) is only 300 nm to 5 nm thick (as an example). This is a betavoltaic device, made of ultra-shallow junctions, which allows such penetration of emitted lower energy electrons, thus, reducing or eliminating losses through electron-hole pair recombination at the surface.
1. A semiconductor processing method, said method comprising:
etching or removing semiconductor material from one or more regions of a semiconductor substrate at an angle so that resulting surface of said semiconductor substrate is not flat, compared to original surface of said semiconductor substrate, and said resulting surface of said semiconductor substrate has one or more dimples, indentations, or pits;
wherein said semiconductor substrate is an N-type doped semiconductor;
adding elements Si and C to said semiconductor substrate from a hot liquid;
growing P-type doped semiconductor layer on said semiconductor substrate; and
attaching said semiconductor substrate to a piece of radioisotope material.
2. A semiconductor processing method, said method comprising:
etching or removing semiconductor material from one or more regions of a semiconductor substrate at an angle so that resulting surface of said semiconductor substrate is not flat, compared to original surface of said semiconductor substrate, and said resulting surface of said semiconductor substrate has one or more dimples, indentations, or pits;
wherein said semiconductor substrate is a P-type doped semiconductor;
adding elements Si and C to said semiconductor substrate from a hot liquid;
growing N-type doped semiconductor layer on said semiconductor substrate; and
attaching said semiconductor substrate to a piece of radioisotope material.
3. The semiconductor processing method as recited in claim 1 , wherein said semiconductor substrate is a lightly-doped material.
4. The semiconductor processing method as recited in claim 1 , wherein said radioisotope material is tritium.
5. The semiconductor processing method as recited in claim 1 , wherein said radioisotope material is Ni-63.
6. The semiconductor processing method as recited in claim 1 , wherein said semiconductor substrate is from group IV elements.
7. The semiconductor processing method as recited in claim 1 , wherein said semiconductor substrate is from group III-V elements.
8. The semiconductor processing method as recited in claim 1 , wherein said semiconductor substrate is SiC.
9. The semiconductor processing method as recited in claim 1 , wherein temperature of said hot liquid is between 400 degrees C. to 1200 degrees C.
10. The semiconductor processing method as recited in claim 1 , wherein doping of said semiconductor substrate is smaller than doping of said P-type doped semiconductor layer deposited on said semiconductor substrate.
11. The semiconductor processing method as recited in claim 1 , wherein said P-type doped semiconductor layer deposited on said semiconductor substrate is highly doped.
12. The semiconductor processing method as recited in claim 1 , wherein doping of said P-type doped semiconductor layer deposited on said semiconductor substrate is highly degenerate.
13. The semiconductor processing method as recited in claim 1 , wherein thickness of said P-type doped semiconductor layer deposited on said semiconductor substrate is in range of 5 nm to 300 nm.
14. The semiconductor processing method as recited in claim 1 , wherein said P-type doped semiconductor layer deposited on said semiconductor substrate is doped with Al.
15. The semiconductor processing method as recited in claim 1 , wherein said P-type doped semiconductor layer deposited on said semiconductor substrate is doped at carrier concentrations of between a range of 10 18 cm −3 to a few times 10 20 cm −3 .
16. The semiconductor processing method as recited in claim 1 , wherein relative concentration of said elements Si and C in said hot liquid are 94.5% and 0.5%, respectively, with 5% relative concentration for other elements.
17. The semiconductor processing method as recited in claim 1 , said semiconductor processing method further comprises: using aluminum or boron as a dopant.
18. The semiconductor processing method as recited in claim 1 , said semiconductor processing method further comprises: adding Ge into said hot liquid.
19. The semiconductor processing method as recited in claim 1 , wherein said semiconductor substrate is based on planar SiC.
20. The semiconductor processing method as recited in claim 1 , wherein said semiconductor substrate is based on SiC with pillars.