System and method for nondestructively measuring concentration and thickness of doped semiconductor layers

1. A system for analyzing at least one doped semiconductor layer, comprising:

a pump source configured to inject charge carriers into a region of a sample to enhance index contrast between at least one doped layer of the sample and a substrate of the sample;

one or more probe sources configured to illuminate a surface of the sample proximate to the injected region of the sample with incrementally separated beams of illumination having a first wavelength and incrementally separated beams of illumination having at least one additional wavelength;

at least one actuation arm configured to actuate the one or more probe sources based on a disposition of incrementally separated illumination beams provided by the pump source to achieve the incremental beam separation between the incrementally separated illumination beams provided by the one or more probe sources or configured to actuate the pump source based on a disposition of the incrementally separated illumination beams provided by the one or more probe sources to achieve an incremental beam separation between one or more illumination beams provided by the pump source;

one or more detectors configured to detect illumination having the first wavelength and illumination having the at least one additional wavelength reflected from the surface of the sample; and

one or more computing systems communicatively coupled to the one or more detectors, the one or more computing systems configured to:

acquire information associated with the reflected illumination having the first wavelength and information associated with the reflected illumination having the at least one additional wavelength from the one or more detectors, and

determine at least one of an active carrier concentration and a thickness of the at least one doped layer of the sample based upon a comparison of the information associated with the reflected illumination having the first wavelength and the information associated with the reflected illumination having the at least one additional wavelength.

2. The system of claim 1 , wherein the pump source includes a pump laser configured to inject charge carriers into the sample at a fixed power level.

3. The system of claim 1 , wherein the pump source includes a pump laser configured to inject charge carriers into the sample at a plurality of discrete power levels.

4. The system of claim 1 , wherein the pump source includes an intensity modulated pump laser configured to inject charge carriers into the sample at one or more discrete power levels.

5. The system of claim 1 , wherein the one or more probe sources include a broad band illumination source configured to provide the illumination having the first wavelength and further configured to provide the illumination having the at least one additional wavelength.

6. The system of claim 5 , wherein the broad band illumination source includes at least one of a Xenon arc lamp, a super continuum laser, or laser sustained plasma source.

7. The system of claim 1 , wherein the one or more probe sources include:

a first illumination source configured to provide the illumination having the first wavelength; and

at least one additional illumination source configured to provide the illumination having the at least one additional wavelength.

8. The system of claim 1 , wherein the one or more computing systems are further configured to:

determine a DC reflectance of the sample utilizing the information associated with the reflected illumination having the first wavelength,

determine a DC reflectance of the sample utilizing the information associated with the reflected illumination having the at least one additional wavelength, and

determine the at least one of the active carrier concentration and the thickness of the at least one doped layer of the sample based upon a comparison of the DC reflectance of the sample associated with the reflected illumination having the first wavelength and the DC reflectance of the sample associated with the reflected illumination having the at least one additional wavelength.

9. The system of claim 8 , wherein the one or more computing systems are further configured to:

determine modulated optical reflectance of the sample utilizing information associated with reflected illumination of each of two or more wavelengths,

determine one or more calibration values for the at least one of the active carrier concentration and the thickness of the at least one doped layer of the sample based upon a comparison of the modulated optical reflectance of the sample associated with the reflected illumination of each of the two or more wavelengths, and

determine the at least one of the active carrier concentration and the thickness of the at least one doped layer of the sample based upon the one or more calibration values and the comparison of the DC reflectance of the sample associated with the reflected illumination having the first wavelength and the DC reflectance of the sample associated with the reflected illumination having the at least one additional wavelength.

10. The system of claim 1 ,

wherein the at least one actuation arm is configured to actuate the one or more probe sources based on a disposition of incrementally separated illumination beams provided by the pump source to achieve the incremental beam separation between the incrementally separated illumination beams provided by the one or more probe sources.

11. The system of claim 1 ,

wherein the at least one actuation arm is configured to actuate the pump source based on a disposition of the incrementally separated illumination beams provided by the one or more probe sources to achieve an incremental beam separation between one or more illumination beams provided by the pump source.

12. The system of claim 1 , wherein the one or more computing systems are further configured to determine the at least one of the active carrier concentration and the thickness of the at least one doped layer of the sample utilizing a mathematical model to compare the information associated with the reflected illumination having the first wavelength and the information associated with the reflected illumination having the at least one additional wavelength, wherein a difference between measured and modeled data is reduced utilizing an optimization technique including at least one of regression or library optimization.

13. The system of claim 12 , wherein the mathematical model includes at least one of an Interference Model, a Drude Model, or a Soref Model.

14. The system of claim 1 , further comprising:

one or more polarizing optical elements for providing metrology to the sample.

15. A method of analyzing at least one doped semiconductor layer, comprising:

injecting charge carriers into a region of a sample to enhance index contrast between at least one doped layer of the sample and a substrate of the sample;

illuminating a surface of the sample proximate to the injected region of the sample with incrementally separated beams of illumination having a first wavelength and incrementally separated beams of illumination having at least one additional wavelength, wherein the incrementally separated illumination beams are provided by one or more probe sources based on a disposition of incrementally separated illumination beams provided by a pump source;

detecting illumination having the first wavelength and illumination having the at least one additional wavelength reflected from the surface of the sample;

acquiring information associated with the reflected illumination having the first wavelength and information associated with the reflected illumination having the at least one additional wavelength; and

determining at least one of an active carrier concentration and a thickness of the at least one doped layer of the sample based upon a comparison of the information associated with the reflected illumination having the first wavelength and the information associated with the reflected illumination having the at least one additional wavelength.

16. The method of claim 15 , wherein the method further includes injecting charge carriers into the sample at a fixed power level.

17. The method of claim 15 , wherein the method further includes injecting charge carriers into the sample at a plurality of discrete power levels.

18. The method of claim 15 , wherein the method further includes:

determining a DC reflectance of the sample utilizing the information associated with the reflected illumination having the first wavelength;

determining a DC reflectance of the sample utilizing the information associated with the reflected illumination having the at least one additional wavelength;

determining the at least one of the active carrier concentration and the thickness of the at least one doped layer of the sample based upon a comparison of the DC reflectance of the sample associated with the reflected illumination having the first wavelength and the DC reflectance of the sample associated with the reflected illumination having the at least one additional wavelength.

19. The method of claim 18 , wherein the method further includes:

determining modulated optical reflectance of the sample utilizing information associated with reflected illumination of each of one or more wavelengths;

determining one or more calibration values for the at least one of the active carrier concentration and the thickness of the at least one doped layer of the sample based upon a comparison of the modulated optical reflectance of the sample associated with the reflected illumination of each of the one or more wavelengths; and

determining the at least one of the active carrier concentration and the thickness of the at least one doped layer of the sample utilizing the one or more calibration values and the comparison of the DC reflectance of the sample associated with the reflected illumination having the first wavelength and the DC reflectance of the sample associated with the reflected illumination having the at least one additional wavelength.

20. The method of claim 15 , wherein the method further includes:

determining the at least one of the active carrier concentration and the thickness of the at least one doped layer of the sample utilizing a mathematical model to compare the information associated with the reflected illumination having the first wavelength and the information associated with the reflected illumination having the at least one additional wavelength, wherein a difference between measured and modeled data is reduced utilizing an optimization technique including at least one of regression or library optimization.

21. The method of claim 20 , wherein the mathematical model includes at least one of an Interference Model, a Drude Model, or a Soref Model.

22. The method of claim 15 , wherein the method further includes:

measuring at least one spatial or physical attribute of the at least one doped layer; and

determining the at least one of the active carrier concentration and the thickness of the at least one doped layer of the sample utilizing the at least one measured spatial or physical attribute to condition the information associated with reflected illumination having the first wavelength and the information associated with reflected illumination having the at least one additional wavelength.

23. A method for analyzing at least one semiconductor layer, comprising:

injecting charge carriers into a region of a sample to enhance index contrast between at least one layer of the sample and a substrate of the sample;

illuminating a surface of the sample proximate to the injected region of the sample with incrementally separated beams of illumination having a first wavelength and incrementally separated beams of illumination having at least one additional wavelength, wherein the incrementally separated illumination beams are provided by one or more probe sources based on a disposition of incrementally separated illumination beams provided by a pump source;

detecting illumination having the first wavelength reflected from the surface of the sample and illumination having the at least one additional wavelength reflected from the surface of the sample;

acquiring information associated with the reflected illumination having the first wavelength and information associated with the reflected illumination having the at least one additional wavelength; and

determining a thickness of the at least one layer of the sample and at least one of an active carrier concentration and a damage level of the at least one layer of the sample based upon a comparison of the information associated with the reflected illumination having the first wavelength and the information associated with the reflected illumination having the at least one additional wavelength.