IP Library › Granted Patent US 8,806,731
Granted Patent B2
US 8,806,731 · App. 12/987,697 · Granted Aug 19, 2014

Method of repairing a probe board

Inventors: Myung Whun Chang (Seoul, KR); Dae Hyeong Lee (Seoul, KR); Ki Pyo Hong (Gyunggi-do, KR)
Assignee: Samsung Electro-Mechanics Co., Ltd.
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Quick Facts
Patent No.
US 8,806,731
App. No.
12/987,697
Granted
Aug 19, 2014
Kind
B2
Abstract

There is provided a method of repairing a probe board, the method including: preparing a plurality of first via electrodes filled with a first filling material in a board body formed as a ceramic sintered body; forming a via hole for an open via electrode among the plurality of first via electrodes; filling the via hole with a second filling material having a lower sintering temperature than that of the first filling material; and forming a second via electrode by sintering the second filling material. The open via repair according to the present invention improves the manufacturing yield of the board and reduces the manufacturing costs thereof.

Claims (13)

1. A method of repairing a probe board, the method comprising:

preparing a plurality of first via electrodes filled with a first filling material in a board body formed as a ceramic sintered body;

inspecting an open defect in the first filling material of the plurality of first via electrodes;

removing the first filling material having the open defect from the first via electrodes;

filling a second filling material, having a lower sintering temperature than that of the first filling material, into a via hole of the first via electrodes from which the first filling material is removed; and

forming a second via electrode by sintering the second filling material.

2. The method of claim 1 , wherein the first filling material is copper or silver.

3. The method of claim 1 , wherein the second filling material is silver nano powder.

4. The method of claim 1 , wherein the second filling material is sintered at 400° C. or less.

5. The method of claim 1 , wherein the via hole for the open via electrode has a depth ranging from 1 mm to 4 mm.

6. The method of claim 1 , wherein the via hole for the open via electrode has a diameter ranging from 100 μm to 500 μm.

7. The method of claim 1 , wherein the via hole is formed by laser drilling or mechanical drilling.

8. The method of claim 1 , wherein the second filling material has a particle size ranging from 50 nm to 500 nm.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 13, 2017
From: SAMSUNG ELECTRO-MECHANICS CO., LTD.
To: SEMCNS CO., LTD.
Reel/Frame 041242/0295 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 10, 2011
From: CHANG, MYUNG WHUN; LEE, DAE HYEONG; HONG, KI PYO
To: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Reel/Frame 025611/0635 →
Priority Claims (1)
KR 10-2010-0078499 · Aug 13, 2010 · national
Continuity (1)
Related Publication 20120037408A1 · Feb 16, 2012