Pillar design for conductive bump
A system and method for conductive pillars is provided. An embodiment comprises a conductive pillar having trenches located around its outer edge. The trenches are used to channel conductive material such as solder when a conductive bump is formed onto the conductive pillar. The conductive pillar may then be electrically connected to another contact through the conductive material.
1. A semiconductor device comprising:
a first substrate; and
a conductive post extending away from the first substrate, the conductive post comprising one or more trenches located along a sidewall of the conductive post, the one or more trenches being perpendicular to the first substrate.
2. The semiconductor device of claim 1 , further comprising a conductive material located within the one or more trenches.
3. The semiconductor device of claim 2 , wherein the conductive material is solder.
4. The semiconductor device of claim 2 , further comprising:
a second substrate located over the first substrate; and
a conductive region located on the second substrate, wherein the conductive region is in contact with the conductive material.
5. The semiconductor device of claim 2 , wherein the conductive material extends beyond a diameter of the conductive post.
6. The semiconductor device of claim 2 , wherein the conductive material fills only part of the one or more trenches.
7. The semiconductor device of claim 1 , wherein the conductive post comprises copper.
8. The semiconductor device of claim 1 , wherein the one or more trenches comprise at least two or more trenches arranged symmetrically around the conductive post.
9. A semiconductor device comprising:
a first substrate;
a conductive post extending away from the substrate, the conductive post having a first longitudinal axis; and
at least one trench within the conductive post, the at least one trench having a second longitudinal axis parallel with the first longitudinal axis.
10. The semiconductor device of claim 9 , further comprising a conductive material located at least partially within the at least one trench.
11. The semiconductor device of claim 10 , wherein the conductive material comprises solder.
12. The semiconductor device of claim 10 , further comprising:
a second substrate facing the first substrate; and
a conductive region on the second substrate, the conductive region in physical and electrical contact with the conductive material.
13. The semiconductor device of claim 9 , wherein the at least one trench further comprises three trenches.
14. The semiconductor device of claim 9 , wherein the at least one trench further comprises four trenches.
15. A semiconductor device comprising:
a conductive post extending away from a substrate;
one or more trenches extending from a first end of the conductive post to a second end of the conductive post; and
a conductive material located at least partially within the one or more trenches.
16. The semiconductor device of claim 15 , wherein the conductive material comprises solder.
17. The semiconductor device of claim 15 , wherein the conductive material fills only part of the one or more trenches.
18. The semiconductor device of claim 15 , wherein the conductive material extends beyond an outer edge of the conductive post.
19. The semiconductor device of claim 15 , wherein the one or more trenches comprises a plurality of trenches arranged symmetrically around an outer edge of the conductive post.
20. The semiconductor device of claim 15 , wherein the conductive post comprises copper.