IP Library Granted Patent US 8,821,641
Granted Patent B2
US 8,821,641 · App. 13/606,774 · Granted Sep 2, 2014

Nozzle unit, and apparatus and method for treating substrate with the same

Inventors: Sang Gon Lee (Yongin-si, KR); Hyeong Soo Park (Seoul, KR)
Assignee: Samsung Electronics Co., Ltd.
C23C16/45508C23C16/4585C23C16/4584C23C16/45572C23C16/45519C23C16/45574H01L21/68771H01L21/68764
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Quick Facts
Patent No.
US 8,821,641
App. No.
13/606,774
Granted
Sep 2, 2014
Kind
B2
Abstract

Provided is a substrate treatment apparatus. The substrate treatment apparatus includes a process chamber, a support unit disposed within the process chamber to support a substrate, and a nozzle unit disposed within the process chamber to spray gas. The nozzle unit includes a first nozzle spraying process gas, and a second nozzle spraying blocking gas onto an inner wall of the process chamber or an area adjacent to the support unit to prevent the process gas from being deposited on the inner wall of the process chamber or the support unit.

Claims (58)

1. A substrate treatment apparatus, comprising:

a process chamber;

a support unit disposed within the process chamber to support a substrate; and

a nozzle unit disposed within the process chamber to spray gas,

the nozzle unit including,

a first nozzle spraying process gas,

a second nozzle spraying blocking gas onto an inner wall of the process chamber or an area adjacent to the support unit to prevent the process gas from being deposited on the inner wall of the process chamber or the support unit,

at least one inner tube in which the processing gas is introduced, and

an outer tube through which a cooling fluid for cooling the process gas within the at least one inner tube flows, the outer tube along sidewalls and a bottom surface of the at least one inner tube;

wherein the first nozzle sprays the process as in a horizontal direction, and

the second nozzle is disposed in at least one of upper and lower portions of the nozzle unit to spray the blocking as in a direction parallel to that of the process gas.

2. The substrate treatment apparatus of claim 1 , wherein the nozzle unit further includes,

a first inner tube in which the blocking gas is introduced; and

a second inner tube in which the process gas is introduced, the second inner tube surrounding the first inner tube,

wherein the outer tube surrounds the second inner tube,

the first nozzle extends from the second inner tube toward the outer tube, and

the second nozzle extends from the first inner tube toward the outer tube.

3. The substrate treatment apparatus of claim 1 , wherein

the first nozzle extends from the at least one inner tube toward the outer tube, and

the second nozzle is disposed outside an upper end of the outer tube and in a lower end of the outer tube.

4. The substrate treatment apparatus of claim 1 ,

wherein the first nozzle extends from the at least one inner tube toward the outer tube, and

the second nozzle comprises a circular tube disposed along a circumference direction of an inner side surface of the outer tube and in which the blocking gas is introduced and spray holes defined in the outer tube and connected to the circular tube.

5. The substrate treatment apparatus of claim 1 , wherein the support unit comprises:

a support plate in which a plurality of holder grooves for receiving a substrate holder are arranged along an edge area of a top surface thereof, the support plate having a plate shape; and

a rotation driving member rotating the support plate.

6. The substrate treatment apparatus of claim 5 , wherein the nozzle unit is disposed above a central area of the support plate, and

the first and second nozzles are provided in plurality to form a radial gas flow in which the gas flows from the central area of the support plate toward an edge area.

7. The substrate treatment apparatus of claim 5 , wherein a second groove is defined in the central area of the top surface of the support plate, and

a lower end of the nozzle unit is inserted into the second groove so that the lower end of the nozzle unit is spaced from a bottom surface of the second groove.

8. The substrate treatment apparatus of claim 1 , further comprising:

a plurality of the first nozzles vertically stacked from a center of the nozzle unit toward upper or lower ends of the nozzle unit.

9. A nozzle unit, comprising:

a nozzle body including,

nozzles are arranged along an edge of the nozzle body and extend from a center of toe nozzle body to the edge of the nozzle body,

at least one inner tube in which a process gas is introduced, and

an outer tube through which a cooling fluid for cooling the process gas within the at least one inner tube flows, the outer tube along sidewalls and a bottom surface of the at least one inner tube,

the nozzle body having a cylindrical shape,

the nozzles including,

first nozzles spraying the process gas in a horizontal direction,

second nozzles disposed in upper or lower ends of the nozzle body to spray blocking gas in a horizontal direction parallel to that of the process gas.

10. The nozzle unit of claim 9 , wherein the second nozzles are classified into a first group disposed in the upper end of the nozzle body and a second group disposed in the lower end of the nozzle body, and

the second nozzles belonging to the same group are provided along a circumference direction of the nozzle body at the same height of the nozzle body.

11. The nozzle unit of claim 10 , wherein the second nozzles belonging to the first group spray the blocking gas onto an area adjacent to an upper wall of a process chamber in which the nozzle unit is installed, and

the second nozzles belonging to the second group spray the blocking gas onto an area adjacent to a support plate on which substrates are placed.

12. The nozzle unit of claim 9 , wherein the nozzle body further includes,

a first inner tube in which the blocking gas is introduced, and

a second inner tube in which the process gas is introduced, the second inner tube surrounding the first inner tube, and

wherein the outer tube surrounds the second inner tube,

the first nozzles spray the process gas within the second inner tube to the outside of the outer tube, and

the second nozzles spray the blocking gas within the first inner tube to the outside of the outer tube.

13. The nozzle unit of claim 9 ,

wherein the first nozzles spray the process gas within the at least one inner tube to the outside of the outer tube, and

the second nozzles are provided outside of an upper end of the outer tube and in a lower end of the outer tube.

14. The nozzle unit of claim 9 ,

wherein the first nozzles spray the process gas within the at least one inner tube to the outside of the outer tube, and

the second nozzles comprise a circular tube disposed along a circumference direction of an inner side surface of the outer tube and in which the blocking gas is introduced and spray holes defined in the outer tube and connected to the circular tube.

15. The nozzle unit of claim 9 , wherein the first nozzles are vertically stacked from a center of the nozzle body toward the upper or lower ends of the nozzle body.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 7, 2012
From: LEE, SANG GON; PARK, HYEONG SOO
To: SEMES CO., LTD.
Reel/Frame 028941/0020 →
Priority Claims (2)
KR 10-2011-0099942 · Sep 30, 2011 · national
KR 10-2011-0121056 · Nov 18, 2011 · national
Continuity (1)
Related Publication 20130084391A1 · Apr 4, 2013