Substrate processing apparatus and method, and program and storage medium
A substrate processing apparatus includes a plasma source facing a substrate, and a shielding member placed between the substrate and the plasma source. The plasma source diffuses a plasma radially and the shielding member has a through hole through which a part of the radially diffused plasma passes. A substrate processing method is used for performing a plasma processing on a substrate in a substrate processing apparatus including a plasma source facing the substrate and a shielding member placed between the plasma source and the substrate. The shielding member has a through hole. The method includes the step of diffusing a plasma radially by the plasma source.
1. A substrate processing apparatus for performing plasma etching, comprising:
a plasma source which generates ions by converting a process gas into a plasma;
a mounting table for mounting thereon a substrate to be processed; and
a shielding member placed between the substrate mounted on the mounting table and the plasma source, wherein the generated ions by the plasma source are radially propagated from the plasma source and the shielding member has a through-hole through which a part of the radially propagated ions passes,
wherein the plasma source and the shielding member are allowed to move parallel to a top surface of the substrate mounted on the mounting table as a single unit.
2. The substrate processing apparatus of claim 1 , wherein the through-hole is opened at a region other than a region allowing the ions passing through the through-hole to be vertically incident on a surface of the substrate mounted on the mounting table.
3. The substrate processing apparatus of claim 1 , wherein the shielding member is electrically floated.
4. The substrate processing apparatus of claim 3 , wherein the shielding member is a conductor.
5. A substrate processing method for performing a plasma processing on a substrate in a substrate processing apparatus, the method comprising providing the substrate processing apparatus as recited in claim 1 , and further comprising:
diffusing a plasma radially by the plasma source; and
moving the plasma source and the shielding member parallel to a top surface of the substrate as a single unit.
6. The substrate processing apparatus of claim 1 , further comprising a controller configured to place the shielding plate between the substrate and the plasma source after the substrate is mounted on the mounting table or from an initial stage.
7. The substrate processing apparatus of claim 1 , further comprising a controller configured to cut a power to the plasma source and the mounting table when the plasma source and the shielding plate move.
8. The substrate processing apparatus of claim 1 , wherein the plasma source is positioned at a location spaced about 40 mm above the substrate mounted on the mounting table.
9. The substrate processing apparatus of claim 1 , wherein the shielding member is positioned at a location spaced from the substrate mounted on the mounting table by 10 mm to 20 mm.