Substrate processing apparatus and substrate processing method

1. A substrate processing apparatus comprising:

a substrate holding unit configured to hold a substrate horizontally;

a rotation driving unit configured to rotate the substrate holding unit;

a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate held by the substrate holding unit;

a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate held by the substrate holding unit;

a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate held by the substrate holding unit; and

a second gas supply port provided separately from the first gas supply port and configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate held by the substrate holding unit,

wherein the first gas supply port is disposed at a lower side of the substrate held by the substrate holding unit, and includes a first gas ejection port connected to a first gas diffusion space, and a heater adjacent to the first gas diffusion space, thereby supplying the first gas to the peripheral portion of the substrate from the lower side of the substrate.

2. The substrate processing apparatus of claim 1 , further comprising a cover plate having a bottom surface opposite to an upper surface of the substrate held by the substrate holding unit, and configured to cover the substrate from the upper side of the substrate.

3. The substrate processing apparatus of claim 1 , further comprising a cover member configured to cover the peripheral portion of the upper surface of the substrate held by the substrate holding unit.

4. The substrate processing apparatus of claim 1 , wherein the first gas supply port has a first switching valve configured to switch between supplying and not supplying the first gas, and the second gas supply port has a second switching valve configured to switch between supplying and not supplying the second gas.

5. The substrate processing apparatus of claim 1 , wherein the second gas supply port is connected to a pressurized gas source.

6. The substrate processing apparatus of claim 1 , further comprising a first switch valve configured to switch between supplying and not supplying the first gas.

7. The substrate processing apparatus of claim 6 , wherein the first gas diffusion space is formed along a circumferential direction such that the first gas supplied to the first gas diffusion space diffuses toward the circumferential direction while being heated.

8. The substrate processing apparatus of claim 6 , wherein the first gas ejection port includes an outer side first gas ejection port and an inner side first gas ejection port provided in an inner side of the outer side first gas ejection port in a radial direction.

9. The substrate processing apparatus of claim 8 , wherein the second gas supply port is provided in an inner side of the inner side first gas ejection port in a radial direction.

10. The substrate processing apparatus of claim 6 , wherein the second gas supply port is disposed in a lower side of the substrate held by the substrate holding unit, and includes a second gas diffusion space, a second gas ejection port connected to the second gas diffusion space to be provided in an inner side of the first gas ejection port in a radial direction, and a second switching valve configured to switch between supplying and not supplying the second gas.