Thin film transistor substrate including source-drain electrodes formed from a nitrogen-containing layer or an oxygen/nitrogen-containing layer
A substrate supporting thin film transistors thereon, each including a semiconductor layer and source-drain electrodes, wherein the source-drain electrodes are formed from a nitrogen-containing layer or oxygen/nitrogen-containing layer and a thin film of pure copper or copper alloy. The nitrogen-containing layer or oxygen/nitrogen-containing layer has respectively part or all of its nitrogen or part or all of its oxygen or nitrogen connected to silicon in the semiconductor layer of the thin film transistor, and the thin film of pure copper or copper alloy is connected to the semiconductor layer of said thin film transistor through the nitrogen-containing layer or oxygen/nitrogen-containing layer.
1. A substrate supporting thin film transistors thereon, comprising:
said transistors each having a semiconductor layer and source-drain electrodes,
said semiconductor layer comprising a single silicon layer including a transistor channel;
said source-drain electrodes having a thin film of pure copper or copper alloy;
a nitrogen-containing layer or an oxygen/nitrogen-containing layer comprising a plasma-reacted surface layer in silicon in the single silicon layer of the thin film transistor that has respectively part or all of its nitrogen or part or all of its oxygen or nitrogen connected to the silicon in said single silicon layer of said thin film transistor; and
said thin film of pure copper or copper alloy connected with said single silicon layer of said thin film transistor only through said nitrogen-containing layer or oxygen/nitrogen-containing layer in said silicon in the single silicon layer of the thin film transistor,
wherein the single silicon layer includes both
1) said channel, and
2) said nitrogen-containing layer or oxygen/nitrogen-containing layer comprising said plasma-reacted surface layer.
2. The substrate supporting thin film transistors thereon as defined in claim 1 , wherein the nitrogen-containing layer contains nitrogen such that the ratio of the number of nitrogen atoms to the number of silicon atoms is no smaller than 0.2 and no larger than 2.0, and said oxygen/nitrogen-containing layer contains oxygen and nitrogen such that the ratio of the total number of oxygen atoms and nitrogen atoms to the number of silicon atoms is no smaller than 0.2 and no larger than 2.0.
3. The substrate supporting thin film transistors thereon as defined in claim 2 , wherein the nitrogen-containing layer or oxygen/nitrogen-containing layer has a thickness no smaller than 0.8 nm and no larger than 3.5 nm.
4. The substrate supporting thin film transistors thereon as defined in claim 1 , wherein the semiconductor layer of the thin film transistor is formed from amorphous silicon or poly-crystalline silicon.
5. The substrate supporting thin film transistors thereon as defined in claim 4 , further comprising a display device connected to said transistors.