IP Library › Granted Patent US 8,866,287
Granted Patent B2
US 8,866,287 · App. 13/631,990 · Granted Oct 21, 2014

Embedded structures for package-on-package architecture

Inventors: Weng Hong Teh (Phoenix, AZ); Vinodhkumar Raghunathan (Chandler, AZ)
Assignee: Intel Corporation
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Quick Facts
Patent No.
US 8,866,287
App. No.
13/631,990
Granted
Oct 21, 2014
Kind
B2
Abstract

Electronic assemblies including substrates and their manufacture are described. One assembly includes a die embedded in a dielectric layer in a multilayer substrate, and a dielectric region embedded in the dielectric layer in the multilayer substrate. The multilayer substrate includes a die side and a land side, with the first dielectric region and the dielectric layer extending to the die side. A plurality of vias are positioned within the first dielectric region, the vias extending to pads on the die side. Other embodiments are described and claimed.

Claims (28)

1. An assembly comprising:

a die embedded in a dielectric layer in a multilayer substrate;

a dielectric region embedded in the dielectric layer in the multilayer substrate;

the multilayer substrate including a die side and a land side, the dielectric region and the dielectric layer extending to the die side;

a plurality of pads on the die side; and

a plurality of electrically conductive pathways extending through the dielectric region, the plurality of electrically conductive pathways extending to the plurality of pads on the die side.

2. The assembly of claim 1 , further comprising a plurality of electrically conductive pathways extending through the dielectric layer that are electrically coupled to the plurality of electrically conductive pathways extending through the dielectric region.

3. The assembly of claim 1 , wherein the die embedded in the dielectric region is a first die, the assembly further comprising an additional die positioned on the die on the die side of the multilayer substrate.

4. The assembly of claim 3 , further comprising a substrate coupled to the plurality of pads, wherein the substrate extends over the second die.

5. The assembly of claim 1 , further comprising a substrate coupled to the plurality of pads.

6. The assembly of claim 1 , wherein the dielectric region embedded in the dielectric layer is a first dielectric region, the assembly further comprising a second dielectric region embedded in the dielectric layer, the second dielectric region separated from the die side by the first dielectric region.

7. The assembly of claim 6 , wherein the plurality of electrically conductive pathways extending through the first dielectric region are first electrically conductive pathways, wherein the second dielectric region includes a plurality of second electrically conductive pathways extending therethrough, wherein at least a portion of the plurality of second electrically conductive pathways are offset from at least a portion of the first electrically conductive pathways and electrically coupled thereto.

8. The assembly of claim 1 , wherein the dielectric region extends around the die within the dielectric layer.

9. The assembly of claim 1 , wherein the dielectric region comprises a plurality of spaced apart dielectric regions.

10. The assembly of claim 1 , wherein the multilayer substrate comprises a coreless structure.

11. The assembly of claim 1 , wherein the die comprises a silicon die including through-silicon vias.

12. An assembly comprising:

a multilayer substrate including a land side and a die side;

a first die embedded in a first dielectric layer of the multilayer substrate, the first dielectric layer separated from the land side by a plurality of additional dielectric layers;

a first dielectric region embedded in the first dielectric layer;

a plurality of pads on the die side;

a plurality of first electrically conductive pathways in the first dielectric region, the plurality of first electrically conductive pathways electrically coupled to the plurality of pads on the die side;

a second dielectric region embedded in the first dielectric layer; and

a plurality of second electrically conductive pathways in the second dielectric region electrically coupled to the plurality of first electrically conductive pathways in the first dielectric region;

wherein the first dielectric region is positioned between the second dielectric region and the die side.

13. The assembly of claim 12 , further comprising a substrate coupled to the plurality of pads on the die side.

14. The assembly of claim 12 , further comprising a second die coupled to the first die on the die side.

15. The assembly of claim 14 , further comprising a substrate coupled to the plurality of pads on the die side, wherein the second die is positioned between the substrate and the die side.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 18, 2026
From: INTEL CORPORATION
To: INTEL FOUNDRY IP LLC
Reel/Frame 076065/0923 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE ADDRESS PREVIOUSLY RECORDED ON REEL 030889 FRAME 0828. ASSIGNOR(S) HEREBY CONFIRMS THE RECEIVING PARTY CITY SHOULD BE CORRECTED FROM "SANATA CLARA" TO "SANTA CLARA". Recorded Apr 23, 2014
From: TEH, WENG HONG; RAGHUNATHAN, VINODHKUMAR
To: INTEL CORPORATION
Reel/Frame 032745/0557 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 25, 2013
From: TEH, WENG HONG; RAGHUNATHAN, VINODHKUMAR
To: INTEL CORPORATION
Reel/Frame 030889/0828 →
Continuity (1)
Related Publication 20140093999A1 · Apr 3, 2014