Semiconductor packaging structure and method
A system and method for packaging semiconductor dies is provided. An embodiment comprises a first package with a first contact and a second contact. A post-contact material is formed on the first contact in order to adjust the height of a joint between the contact pad a conductive bump. In another embodiment a conductive pillar is utilized to control the height of the joint between the contact pad and external connections.
1. A semiconductor device comprising:
a first package with a first side;
a first contact located on the first side and a second contact located on the first side;
a first post-contact material over the first contact but not over the second contact;
a conductive connector in contact with the first post-contact material; and
a second package bonded to the second contact, wherein the conductive connector extends further from the first package than the second package.
2. The semiconductor device of claim 1 , wherein the conductive connector is a solder bump.
3. The semiconductor device of claim 1 , wherein the post-contact material is a high-melting point pre-solder material.
4. The semiconductor device of claim 3 , wherein the post-contact material comprises SnCu, SnAg, SnAgCu, or SnAu.
5. The semiconductor device of claim 1 , wherein the post-contact material has a thickness of between about 10 μm and about 200 μm.
6. A semiconductor device comprising:
a first contact and a second contact on a first side of a first package; and
a conductive pillar extending away from the first contact, wherein the second contact is free from a conductive pillar; and
a second package bonded to the second contact, wherein the conductive pillar extends further from the first package than the second package.
7. The semiconductor device of claim 6 , further comprising a cap on the conductive pillar.
8. The semiconductor device of claim 7 , wherein the cap is solder.
9. The semiconductor device of claim 7 , wherein the cap is no-flow solder.
10. The semiconductor device of claim 7 , wherein the conductive pillar has an oval shape.
11. The semiconductor device of claim 6 , further comprising a second package bonded to the second contact, wherein the second package is not bonded to the conductive pillar.
12. The semiconductor device of claim 6 , further comprising vias through the first package to a second side of the first package.
13. The semiconductor device of claim 6 , further comprising a plating material located over the conductive pillar.
14. A semiconductor device comprising:
a first package;
a first contact and a second contact within the first package, wherein the first contact and the second contact are located on a first side of a package, wherein the first contact has a first top surface and the second contact has a second top surface planar with the first top surface;
a first post-contact material in physical contact with the first contact, wherein the second contact is not in physical contact with the first post-contact material; and
a second package bonded to the second contact, wherein the conductive connector extends further from the first package than the second package.
15. The semiconductor device of claim 14 , further comprising a first conductive connector in contact with the first post-contact material.
16. The semiconductor device of claim 15 , further comprising a second conductive connector in physical contact with the second contact.
17. The semiconductor device of claim 14 , wherein the first post-contact material has a thickness of between about 10 μm and about 200 μm.
18. The semiconductor device of claim 14 , wherein the first post-contact material is a high-melting point pre-solder material.
19. The semiconductor device of claim 14 , wherein the first post-contact material comprises SnCu, SnAg, SnAgCu, or SnAu.
20. The semiconductor device of claim 14 , wherein the first package comprises vias extending from one side of the first package to an opposite side of the first package.