Systems and methods for controlling etch selectivity of various materials
A method for filling a recessed feature of a substrate includes a) at least partially filling a recessed feature of a substrate with tungsten-containing film using at least one of chemical vapor deposition (CVD) and atomic layer deposition (ALD); b) at a predetermined temperature, using an etchant including activated fluorine species to selectively etch the tungsten-containing film more than an underlying material of the recessed feature without removing all of the tungsten-containing film at a bottom of the recessed feature; and c) filling the recessed feature using at least one of CVD and ALD.
1. A method for filling a recessed feature of a substrate, comprising:
a) providing a substrate including a dielectric layer, a liner/barrier layer, and a recessed feature;
b) at least partially filling the recessed feature of the substrate with tungsten-containing film using at least one of chemical vapor deposition (CVD) and atomic layer deposition (ALD);
c) at a predetermined temperature less than or equal to 150° C., using an etchant including activated fluorine species to selectively etch the tungsten-containing film in the recessed feature at an etch rate that is higher than an etch rate of the liner/barrier layer, wherein the etching exposes at least a portion of the liner/barrier layer in the recessed feature and does not remove all of the tungsten-containing film at a bottom of the recessed feature;
d) repeating (b) and (c) one or more times, wherein, during a first iteration of (c), the etching removes the tungsten-containing film in the recessed feature to a level that is below a field region of the dielectric layer; and
e) filling the recessed feature using at least one of CVD and ALD.
2. The method of claim 1 , wherein (b) includes filling the recessed feature with the tungsten-containing film such that an opening of the recessed feature is pinched off.
3. The method of claim 1 , wherein (b) includes filling the recessed feature with the tungsten-containing film such that an opening of the recessed feature is closed and overburden is deposited on a field of the substrate.
4. The method of claim 1 , wherein (c) is performed in one of a CVD chamber and an etch chamber.
5. The method of claim 1 , wherein the underlying material includes a liner/barrier layer.
6. The method of claim 2 , wherein the liner/barrier layer includes one of titanium and tantalum.
7. The method of claim 2 , wherein the liner/barrier layer includes one of titanium, titanium nitride, tantalum nitride, and TiC x N x .
8. The method of claim 1 , further comprising performing chemical mechanical planarization (CMP) of the substrate after (e).
9. The method of claim 1 , wherein the predetermined temperature is less than or equal to 100° C.
10. The method of claim 1 , wherein the predetermined temperature is less than or equal to 50° C.
11. The method of claim 5 , wherein the liner/barrier layer includes an overhang that creates a pinch point at an opening of the recessed feature.
12. The method of claim 1 , further comprising adding one or more of nitrogen, oxygen, hydrogen, helium, argon, or fluorine to slow etching of the liner/barrier layer.
13. The method of claim 5 , further comprising oxidizing the liner/barrier layer prior to (b).
14. The method of claim 1 , wherein the level is closer to the bottom of the recessed feature than to the field region of the dielectric layer after the first iteration of (c).
15. A method for filling a recessed feature of a substrate, comprising:
a) providing a substrate including a dielectric layer, a liner/barrier layer, and a recessed feature,
b) oxidizing the liner/barrier layer;
c) at least partially filling the recessed feature of the substrate with tungsten-containing film using at least one of chemical vapor deposition (CVD) and atomic layer deposition (ALD);
d) at a predetermined temperature less than or equal to 150° C., using an etchant including activated fluorine species to selectively etch the tungsten-containing film in the recessed feature at an etch rate that is higher than an etch rate of the liner/barrier layer, and wherein the etching removes the tungsten-containing film in the recessed feature, and the etching exposes at least a portion of the liner/barrier layer in the recessed feature and does not remove all of the tungsten-containing film at a bottom of the recessed feature;
e) repeating c) and d) one or more times, wherein during a first iteration of (d) the etching removes the tungsten-containing film in the recessed feature to a level that is below a field region of the dielectric layer; and
f) at least partially filling the recessed feature using at least one of CVD and ALD.
16. The method of claim 15 , wherein the level is closer to the bottom of the recessed feature than to the field region of the dielectric layer after the first iteration of (d).