Insulative elements
Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second dielectric constant different from the first, and heating at least portions of the structure to crystallize at least a portion of at least one of the first dielectric material and the second dielectric material. Methods of forming a capacitor are described, including forming a first electrode, forming a dielectric material with a first oxide and a second oxide over the first electrode, and forming a second electrode over the dielectric material. Structures including dielectric materials are also described.
1. An insulative element, comprising:
a substantially crystalline first dielectric material on a substrate;
a second dielectric material having a dielectric constant different than a dielectric constant of the substantially crystalline first dielectric material and positioned over the substantially crystalline first dielectric material, wherein dopants of the second dielectric material are dispersed in at least a portion of the substantially crystalline first dielectric material; and
an additional dielectric material having a material composition different than and in contact with at least one of the substantially crystalline first dielectric material and the second dielectric material.
2. The insulative element of claim 1 , wherein the second dielectric material comprises a material having a dielectric constant greater than the dielectric constant of the substantially crystalline first dielectric material.
3. The insulative element of claim 1 , wherein each of the substantially crystalline first dielectric material and the second dielectric material comprises at least one of hafnium oxide, zirconium oxide, silicon oxide, aluminum oxide, strontium oxide, titanium oxide, niobium oxide, tantalum oxide, germanium oxide, an oxynitride, and a rare earth oxide.
4. The insulative element of claim 1 , wherein the substantially crystalline first dielectric material comprises at least one oxide material selected from the group consisting of hafnium oxide, zirconium oxide, aluminum oxide, and silicon oxide and the second dielectric material comprises at least one metal oxide material selected from the group consisting of strontium oxide, titanium oxide, niobium oxide, tantalum oxide, and a rare earth oxide.
5. The insulative element of claim 1 , wherein:
the substantially crystalline first dielectric material comprises at least one of hafnium oxide, zirconium oxide, silicon oxide, and aluminum oxide;
the second dielectric material comprises at least one of strontium oxide, titanium oxide, niobium oxide, tantalum oxide, and a rare earth oxide; and
the additional dielectric material comprises at least one of aluminum oxide, hafnium oxide, germanium oxide, silicon oxide, and a rare earth oxide.
6. The insulative element of claim 1 , wherein at least a portion of the additional dielectric material is located between and in contact with at least a portion of the substantially crystalline first dielectric material and at least a portion of the second dielectric material.
7. An insulative element comprising:
a substrate; and
a dielectric material in contact with at least a portion of the substrate, comprising:
a substantially crystalline metal oxide matrix; and
a metal oxide dopant dispersed within at least a portion of the substantially crystalline metal oxide matrix and incorporated into a crystalline phase of the substantially crystalline metal oxide matrix, a composition of the metal oxide dopant differing from a composition of the metal oxide matrix.
8. The insulative element of claim 7 , wherein the substantially crystalline metal oxide matrix has a first dielectric constant and the metal oxide dopant has a second dielectric constant greater than the first dielectric constant.
9. The insulative element of claim 7 , wherein the substrate comprises an electrode.
10. The insulative element of claim 9 , wherein the electrode of the substrate comprises a first electrode, and further comprising a second electrode positioned on the opposite side of the dielectric material from the first electrode.
11. The insulative element of claim 10 , wherein the dielectric material comprises a first dielectric material, and further comprising a second dielectric material comprising a metal oxide having the same composition as the composition of the metal oxide dopant and positioned at least partially between the first dielectric material and the second electrode.
12. The insulative element of claim 11 , further comprising a third dielectric material comprising a metal oxide having a different composition than the substantially crystalline metal oxide matrix and the metal oxide dopant, located between the first electrode and the second electrode and in contact with at least one of the first dielectric material and the second dielectric material.
13. The insulative element of claim 7 , wherein:
a first region of the substantially crystalline metal oxide matrix comprises the metal oxide dopant dispersed therein; and
a second region of the substantially crystalline metal oxide matrix is substantially free of the metal oxide dopant.
14. The insulative element of claim 7 , wherein the metal oxide dopant is located between grain boundaries of the crystalline phase of the substantially crystalline metal oxide matrix.
15. The insulative element of claim 1 , wherein the substantially crystalline first dielectric material has a first material composition, the second dielectric material has a second material composition different than the first material composition, and the additional dielectric material has a third material composition different than the first material composition and the second material composition.
16. The insulative element of claim 1 , wherein the substantially crystalline first dielectric material has a thickness between about 30 Å and about 80 Å.
17. The insulative element of claim 1 , wherein the second dielectric material has a thickness between about 5 Å and about 30 Å.
18. The insulative element of claim 1 , wherein the additional dielectric material has a thickness between about one monolayer and about 5 Å.
19. An insulative element, comprising:
a substantially crystalline first dielectric material having a first dielectric constant on a substrate, the substantially crystalline first dielectric material having a first thickness between about 30 Å and about 80 Å and comprising at least one oxide material selected from the group consisting of hafnium oxide, zirconium oxide, aluminum oxide, and silicon oxide;
a second dielectric material having a second dielectric constant different than the first dielectric constant and positioned over the substantially crystalline first dielectric material, the second dielectric material having a second thickness less than the first thickness and between about 5 Å and about 30 Å and comprising at least one metal oxide material selected from the group consisting of strontium oxide, titanium oxide, niobium oxide, tantalum oxide, and a rare earth oxide; and
an additional dielectric material having a material composition different than and in contact with at least one of the substantially crystalline first dielectric material and the second dielectric material, the additional dielectric material having a thickness between about one monolayer and about 5 Å.
20. The insulative element of claim 19 , wherein the additional dielectric material comprises at least one of aluminum oxide, hafnium oxide, germanium oxide, silicon oxide, and a rare earth oxide.