Methods of selectively forming a material using parylene coating
Methods for depositing a material, such as a metal or a transition metal oxide, using an ALD (atomic layer deposition) process and resulting structures are disclosed. Such methods include treating a surface of a semiconductor structure periodically throughout the ALD process to regenerate a blocking material or to coat a blocking material that enables selective deposition of the material on a surface of a substrate. The surface treatment may reactivate a surface of the substrate toward the blocking material, may restore the blocking material after degradation occurs during the ALD process, and/or may coat the blocking material to prevent further degradation during the ALD process. For example, the surface treatment may be applied after performing one or more ALD cycles. Accordingly, the presently disclosed methods enable in situ restoration of blocking materials in ALD process that are generally incompatible with the blocking material and also enables selective deposition in recessed structures.
1. A method of selectively forming a material, the method comprising:
forming a plurality of recesses in a first material overlying a substrate to expose underlying surfaces of the substrate;
forming a blocking material over exposed surfaces of the first material;
forming a second material over the exposed surfaces of the substrate by atomic layer deposition without forming the second material over the blockinc material; and
restoring the blocking material by forming a parylene coating over the blocking material without forming the parylene coating on the second material.
2. The method of claim 1 , wherein forming a plurality of recesses in a first material comprises forming a plurality of recesses in a dielectric material.
3. The method of claim 1 , wherein forming a second material on the surface of the substrate by atomic layer deposition comprises depositing between about 10 Å and about 25 Å of the second material on the surface of the substrate by atomic layer deposition.
4. The method of claim 1 , wherein forming a second material on the surface of the substrate by atomic layer deposition comprises performing between about 60 ALD cycles and about 100 ALD cycles to deposit the second material on the surface of the substrate.
5. The method of claim 1 , wherein forming a parylene coating over the blocking material without forming the parylene coating on the second material comprises exposing the blocking material to a parylene in a sublimed or vapor state in a reaction chamber after forming the second material on the surface of the substrate by atomic layer deposition performed in the reaction chamber.
6. The method of claim 1 , further comprising forming a third material over the second material on the surface of the substrate by atomic layer deposition, the third material comprising the same material as the second material.
7. The method of claim 6 , wherein forming the third material over the second material on the surface of the substrate by atomic layer deposition comprises forming the third material after forming the parylene coating over the blocking material.
8. The method of claim 1 , wherein forming a second material over the exposed surfaces of the substrate by atomic layer deposition comprises damaging or degrading the blocking material.
9. The method of claim 1 , wherein the first material comprises silicon dioxide.
10. A method of selectively forming a material, the method comprising:
introducing at least one precursor to a substrate to form a first material on at least one exposed surface of the substrate exposed between portions of a blocking material, the first material comprising a material configured to inhibit formation of a parylene coating thereon;
exposing the substrate to an inert gas to remove the at least one precursor; and
forming the parylene coating over remaining portions of the blocking material without forming the parylene coating on the first material.
11. The method of claim 10 , wherein the material configured to inhibit formation of the parylene coating thereon comprises a material selected from the group consisting of platinum, gold, silver, nickel, copper, iridium, tungsten, thallium and titanium.
12. The method of claim 10 , wherein the blocking material comprises at least one of a photoresist material, polymethylglutarimide (PMGI), polyethylene, polystyrene, polyurethane, poly(methyl methacrylate) (PMMA), phenol formaldehyde, a novolac polycresole, a polyimide, and a fluoro resin.
13. A method of selectively forming a material, the method comprising:
forming a blocking material over portions of an intermediate material and leaving at least one surface of a substrate exposed, the intermediate material overlying at least a portion of the substrate;
forming a first thickness of at least one material by atomic layer deposition on the at least one exposed surface of the substrate selective to the blocking material; and
exposing the blocking material to a parylene in a sublimed or vapor state to form a parylene coating over the blocking material without forming the parylene coating on the at least one material formed by atomic layer deposition.
14. The method of claim 13 , wherein forming a blocking material over portions of an intermediate material and leaving at least one surface of a substrate exposed comprises forming a blocking material comprising at least one of a resist material, a polymeric material, an amphiphilic material, a chloroalkyl compound, a chloroalkene, a 1-alkene, and a 1-alkyne over the portions of the intermediate material and leaving at least one surface of the substrate exposed.
15. The method of claim 13 , further comprising reactivating the substrate prior to exposing the blocking material to the parylene to form the parylene coating over the blocking material without forming the parylene coating on the at least one material formed by atomic layer deposition.
16. The method of claim 13 , wherein forming a first thickness of at least one material by atomic layer deposition on the at least one exposed surface of the substrate selective to the blocking material comprises forming a first thickness of at least one of platinum, gold, silver, nickel, copper, iridium, tungsten, tantalum and titanium by atomic layer deposition on the at least one exposed surface of the substrate selective to the blocking material.
17. The method of claim 13 , wherein forming a first thickness of at least one material by atomic layer deposition on the at least one exposed surface of the substrate selective to the blocking material comprises performing between about 60 ALD cycles and about 100 ALD cycles to deposit a thickness of the at least one material on the surface of the substrate by atomic layer deposition.
18. The method of claim 13 , further comprising forming a second thickness of the at least one material by atomic layer deposition after forming the parylene coating over the blocking material.