Methods of forming capacitors
A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric.
1. A method of forming capacitors, comprising:
forming dielectric material elevationally over node locations;
forming support material comprising polysilicon elevationally over the dielectric material;
forming covering material elevationally over the polysilicon-comprising support material;
forming individual openings through the covering, support, and dielectric materials to the node locations;
forming a first capacitor electrode within individual of the openings in conductive electrical connection with the respective node locations;
after forming the first capacitor electrode within the individual openings, conducting an anisotropic etching step to anisotropically etch openings though the covering material to expose the polysilicon-comprising support material;
first isotropically etching only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes, no additional etching step occurring between said anisotropic etching step and said first isotropic etching using the liquid etching fluid;
after the first isotropic etching, second isotropically etching into the polysilicon-comprising support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes and to stop on the dielectric material; and
forming a capacitor dielectric over the outer and inner portions of the sidewalls of the first capacitor electrodes and forming a second capacitor electrode over the capacitor dielectric.
2. The method of claim 1 wherein the support material is homogenous.
3. The method of claim 1 wherein the first isotropically etching forms the support material to have a non-planar elevationally outermost surface.
4. The method of claim 3 wherein the first isotropically etching forms the elevationally outermost surface of the support material to be jagged.
5. The method of claim 1 wherein the first isotropically etching forms the support material to have a planar elevationally outermost surface.
6. The method of claim 1 wherein the first isotropically etching exposes less than one-half of all of the sidewalls of the individual first capacitors.
7. The method of claim 1 wherein the first isotropically etching exposes more than one-half of all of the sidewalls of the individual first capacitors.
8. The method of claim 1 wherein the support material surrounds the individual first capacitor electrodes, the second isotropically etching removing all remaining of the support material from surrounding the individual first capacitor electrodes.
9. The method of claim 1 wherein the support material comprises an elevationally outer material, an elevationally inner material, and an elevationally intermediate material between the outer and inner materials; the intermediate material being of different composition from composition of the outer and inner materials.
10. The method of claim 9 wherein the first isotropically etching with the liquid etching fluid is conducted to stop on the intermediate material.
11. The method of claim 10 wherein the intermediate material surrounds the individual first capacitor electrodes, and removing all remaining of the intermediate material from surrounding the individual first capacitor electrodes after the first etching.
12. The method of claim 10 wherein the intermediate material surrounds the individual first capacitor electrodes, and removing only some of the intermediate material surrounding the individual first capacitor electrodes after the first isotropically etching to leave intermediate material as part of a finished circuitry construction that comprises the capacitors.
13. The method of claim 1 wherein the support material is not homogenous.