Laser processing method for cutting substrate and laminate part bonded to the substrate
A laser processing method is provided, which, even when a substrate formed with a laminate part including a plurality of functional devices is thick, can cut the substrate and laminate part with a high precision. This laser processing method irradiates a substrate 4 with laser light L while using a rear face 21 as a laser light entrance surface and locating a light-converging point P within the substrate 4 , so as to form modified regions 71, 72, 73 within the substrate 4 . Here, the HC modified region 73 is formed at a position between the segmented modified region 72 closest to the rear face 21 and the rear face 21 , so as to generate a fracture 24 extending along a line to cut from the HC modified region 73 to the rear face 21 . Therefore, when an expandable tape is bonded to the rear face 21 of the substrate 4 and expanded, fractures smoothly advance from the substrate 4 to a laminate part 16 by way of the segmented modified regions 72 , whereby the substrate 4 and laminate part 16 can be cut along the line to cut with a high precision.
1. A laser processing method of irradiating a substrate having a front face formed with a laminate part including a plurality of functional devices with laser light while locating a light-converging point of the laser light within the substrate so as to form a modified region which functions as a start point for cutting within the substrate along a cutting line of the substrate,
the method comprising:
a first forming step of forming a plurality of rows of first modified regions along the cutting line;
a second forming step of forming at least one row of a second modified region along the cutting line at a position between the first modified region closest to a rear face of the substrate and the rear face to form a fracture extending along the cutting line from the second modified region to the rear face such that the fracture does not reach the front face of the substrate;
expanding an expandable film bonded to the rear face of the substrate in a direction that is parallel to the rear face of the substrate to expand the fracture at the rear face to cut the substrate and the laminate part along the cutting line by advancing the fracture from the substrate to the laminate part by way of the first modified regions.
2. A laser processing method according to claim 1 , wherein the substrate is a semiconductor substrate, and wherein the first and second modified regions include a molten processed region.
3. A laser processing method according to claim 1 , wherein the first and second modified regions are successively formed one by one from the side farther from the rear face while using the rear face as a laser light entrance surface.
4. A laser processing method according to claim 1 , wherein the laser light has an energy of 2 μJ to 50 μJ when forming the first modified regions.
5. A laser processing method according to claim 1 , wherein the laser light has an energy of 1 μJ to 20 μJ when forming the second modified region.
6. A laser processing method according to claim 1 , wherein the laser light has a greater energy when forming the first modified regions than when forming the second modified region.
7. A laser processing method according to claim 6 , wherein the energy of the laser light for forming the first modified regions is 1.6 to 3.0 times as large as the energy of the laser light for forming the second modified region.
8. A laser processing method according to claim 1 , wherein respective positions where the light-converging point of the laser light is located when forming neighboring first modified regions have a distance of 24 μm to 70 μm therebetween.
9. A laser processing method according to claim 1 , wherein the light-converging point of the laser light is located at a position distanced by 50 μm to [(the substrate thickness)×0.9] μm from the rear face when forming the first modified regions.
10. A laser processing method according to claim 1 , wherein the light-converging point of the laser light is located at a position distanced by 20 μm to 110 μm from the rear face when forming the second modified region.
11. A laser processing method according to claim 1 , wherein, when forming a plurality of rows of second modified regions, the laser light has a greater energy when forming the first modified regions than when forming the second modified region closest to the rear face of the substrate.
12. A laser processing method according to claim 11 , wherein, when forming a plurality of rows of second modified regions, while the energy of the laser light for forming the second modified region closest to the rear face of the substrate is set to 1, the energy of the laser light for forming the second modified region farthest from the rear face of the substrate is set to 1.3 to 3.3.
13. A laser processing method according to claim 11 , wherein, when forming a plurality of rows of second modified regions, while the energy of the laser light for forming the second modified region closest to the rear face of the substrate is set to 1, the energy of the laser light for forming the first modified regions is set to 1.3 to 3.3.
14. A. laser processing method according to claim 1 , wherein, when forming a plurality of rows of second modified regions, a position where the light-converging point of the laser light is located when forming the second modified region closest to the rear face of the substrate is distanced from the rear face by 20 μm to 110 μm, and a position where the light-converging point of the laser light is located when forming the second modified region second closest to the rear face of the substrate is distanced from the rear face by 140 μm or less.
15. A laser processing method according to claim 1 , further comprising the step of cutting the substrate and laminate part along the line to cut.