Method for depositing dielectric films
A method is provided for depositing a dielectric film on a substrate. According to one embodiment, the method includes providing the substrate in a process chamber, exposing the substrate to a gaseous precursor to form an adsorbed layer on the substrate, exposing the adsorbed layer to an oxygen-containing gas, a nitrogen-containing gas, or an oxygen- and nitrogen-containing gas, or a combination thereof, to form the dielectric film on the substrate, generating a hydrogen halide gas in the process chamber by a decomposition reaction of a hydrogen halide precursor gas, and exposing the dielectric film to the hydrogen halide gas to remove contaminants from the dielectric film.
1. A method for depositing a dielectric film on a substrate, comprising:
providing the substrate in a process chamber;
exposing the substrate to a gaseous precursor to form an adsorbed layer on the substrate;
exposing the adsorbed layer to an oxygen-containing gas, a nitrogen-containing gas, or an oxygen- and nitrogen-containing gas, or a combination thereof, to form the dielectric film on the substrate;
generating a hydrogen halide gas in the process chamber by a decomposition reaction of a hydrogen halide precursor gas; and
exposing the dielectric film to the hydrogen halide gas to remove contaminants from the dielectric film.
2. The method of claim 1 , wherein the gaseous precursor contains a silicon precursor, a germanium precursor, a metal precursor, or a combination thereof.
3. The method of claim 2 , wherein one or more of the silicon precursor, the germanium precursor, or the metal precursor do not contain a halogen.
4. The method of claim 2 , wherein the silicon precursor contains silane (SiH 4 ), disilane (Si 2 H 6 ), an alkyl silane, an amino silane, or a combination thereof.
5. The method of claim 4 , wherein the metal precursor comprises a hafnium precursor, a zirconium precursor, or a combination thereof.
6. The method of claim 5 , wherein the hafnium precursor is selected from Hf(NMe 2 ) 4 , Hf(NEtMe) 4 , Hf(NEt 2 ) 4 , or a hafnium cyclopentadienyl, or a combination thereof, and the zirconium precursor is selected from Zr(NMe 2 ) 4 , Zr(NEtMe) 4 , Zr(NEt 2 ) 4 , or a zirconium cyclopentadienyl, or a combination thereof.
7. The method of claim 1 , wherein the generating comprises flowing a halogenated hydrocarbon into the process chamber.
8. The method of claim 7 , wherein the halogenated hydrocarbon includes a halogenated alkane, a halogenated alkene, or a halogenated alkyne, or a combination thereof.
9. The method of claim 7 , wherein the halogenated hydrocarbon includes 1,1,1-trichloroethane or trans-1,2-dichloroethylene.
10. A method for depositing a dielectric film on a substrate, comprising:
providing the substrate in a process chamber;
exposing the substrate to a gaseous precursor to form an adsorbed layer on the substrate;
exposing the adsorbed layer to a hydrogen halide gas to remove contaminants from the adsorbed layer, wherein the exposing the adsorbed layer to the hydrogen halide gas further includes generating the hydrogen halide gas in the process chamber by a decomposition reaction of a hydrogen halide precursor gas; and
thereafter, exposing the adsorbed layer to an oxygen-containing gas, a nitrogen-containing gas, or an oxygen- and nitrogen-containing gas, or a combination thereof, to form the dielectric film on the substrate.
11. The method of claim 10 , wherein the hydrogen halide precursor gas contains a halogenated hydrocarbon.
12. The method of claim 11 , wherein the halogenated hydrocarbon includes a halogenated alkane, a halogenated alkene, or a halogenated alkyne, or a combination thereof.
13. The method of claim 10 , wherein the gaseous precursor contains a silicon precursor, a germanium precursor, or a metal precursor, or a combination thereof.
14. The method of claim 13 , wherein one or more of the silicon precursor, the germanium precursor, and the metal precursor do not contain a halogen.
15. The method of claim 13 , wherein the silicon precursor contains silane (SiH 4 ), disilane (Si 2 H 6 ), an alkyl silane, an amino silane, or a combination thereof.
16. The method of claim 13 , wherein the metal precursor comprises a hafnium precursor, a zirconium precursor, or a combination thereof.
17. The method of claim 16 , wherein the hafnium precursor is selected from Hf(NMe 2 ) 4 , Hf(NEtMe) 4 , Hf(NEt 2 ) 4 , or a hafnium cyclopentadienyl, or a combination thereof, and the zirconium precursor is selected from Zr(NMe 2 ) 4 , Zr(NEtMe) 4 , Zr(NEt 2 ) 4 , or a zirconium cyclopentadienyl, or a combination thereof.
18. The method of claim 17 , wherein the halogenated hydrocarbon includes 1,1,1-trichloroethane or trans-1,2-dichloroethylene.
19. A method for depositing a dielectric film on a substrate, comprising:
providing the substrate in a process chamber;
exposing the substrate to a gaseous precursor containing silicon, germanium, a metal, or a combination thereof, to form an adsorbed layer on the substrate, wherein the adsorbed layer further contains carbon and/or nitrogen contaminants;
exposing the substrate to an oxygen-containing gas, a nitrogen-containing gas, or an oxygen- and nitrogen-containing gas, or a combination thereof, to form the dielectric film on the substrate;
generating a hydrogen halide gas in the process chamber by a decomposition reaction of a hydrogen halide precursor gas; and
exposing the adsorbed layer, the dielectric film, or both the adsorbed layer and the dielectric film, to the hydrogen halide gas to remove the contaminants from the adsorbed layer, from the dielectric film, or from both the adsorbed layer and the dielectric film.