Semiconductor device and method of fabricating the same
A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.
1. A semiconductor device comprising:
a semiconductor substrate:
a semiconductor active region on a surface of the semiconductor substrate, wherein the semiconductor active region protrudes away from the surface of the semiconductor substrate; and
an isolation layer on the surface of the semiconductor substrate to define the semiconductor active region, wherein the semiconductor active region protrudes beyond a surface of the isolation layer;
wherein a first portion of a sidewall of the semiconductor active region below the surface of the isolation layer has a first slope, and wherein a second portion of the sidewall of the semiconductor active region beyond the surface of the isolation layer has a second slope different than the first slope.
2. The semiconductor device of claim 1 further comprising:
a gate structure on the second portion of the sidewall of the semiconductor active region.
3. The semiconductor device of claim 2 wherein the sidewall of the semiconductor active region is a first sidewall of the semiconductor active region, wherein the active region has a second sidewall, and wherein the gate structure extends across the active region on the first and second sidewalls on opposite sides of the active region.
4. The semiconductor device of claim 3 wherein the gate structure includes a insulting layer.
5. The semiconductor device of claim 2 wherein the sidewall of the semiconductor active region is a first sidewall of the semiconductor active region, wherein the active region has a second sidewall, and wherein the gate structure includes a gate electrode extending across the active region on the first and second sidewalls on opposite sides of the active region and an insulating layer between the gate electrode and the semiconductor active region.
6. The semiconductor device of claim 1 wherein the active region has a fin-type structure.
7. The semiconductor device of claim 1 wherein the isolation layer comprises a trench isolation layer.
8. The semiconductor device of claim 1 wherein the sidewall is a first sidewall, wherein the active region includes a second sidewall and a top surface between the first and second sidewalls, and wherein the second portion of the first sidewall is spaced apart from the top surface of the active region.
9. The semiconductor device of claim 8 wherein the second portion of the first sidewall is spaced apart from the top surface of the active region by a first distance, wherein the second portion of the first sidewall is spaced apart from the surface of the isolation layer by a second distance, and wherein the first distance is greater than the second distance.
10. The semiconductor device of claim 8 wherein the second portion of the first sidewall is spaced apart from the top surface of the active region by a first distance, wherein the second portion of the first sidewall is spaced apart from the surface of the isolation layer by a second distance, and wherein the first distance is less than the second distance.
11. The semiconductor device of claim 8 wherein the top surface of the semiconductor active region is rounded to define a rounded top surface.
12. The semiconductor device of claim 11 wherein a bend is defined in the sidewall between the first and second slopes, and wherein the bend is spaced apart from the rounded top surface.
13. The semiconductor device of claim 1 wherein a bend is defined in the sidewall between the first and second slopes.
14. The semiconductor device of claim 1 wherein the first slope is greater than the second slope.
15. The semiconductor device of claim 1 wherein the semiconductor substrate comprises at least one of silicon, silicon germanium, and/or germanium.
16. A semiconductor device comprising:
a semiconductor substrate:
a semiconductor active region on a surface of the semiconductor substrate, wherein the semiconductor active region protrudes away from the surface of the semiconductor substrate, wherein the semiconductor active region includes first and second sidewalls and a rounded top surface between the first and second sidewalls; and
an isolation layer on the surface of the semiconductor substrate to define the semiconductor active region, wherein the semiconductor active region protrudes beyond a surface of the isolation layer.
17. The semiconductor device of claim 16 wherein a first portion of the first sidewall below the surface of the isolation layer has a first slope, and wherein a second portion of the first sidewall beyond the surface of the isolation layer has a second slope different than the first slope.
18. The semiconductor device of claim 16 wherein a bend is defined in the first sidewall between the first and second slopes, and wherein the bend is spaced apart from the rounded top surface.
19. The semiconductor device of claim 16 further comprising:
an insulating layer on the first and second sidewalls and on the rounded top surface of the semiconductor active region; and
a gate electrode on the insulating layer.
20. The semiconductor device of claim 19 wherein the gate electrode extends across the semiconductor active region and on the isolation layer on opposite sides of the semiconductor active region.