Low-k Cu barriers in damascene interconnect structures
In the formation of an interconnect structure, a metal feature is formed in a dielectric layer. An etch stop layer (ESL) is formed over the metal feature and the dielectric layer using a precursor and a carbon-source gas including carbon as precursors. The carbon-source gas is free from carbon dioxide (CO 2 ). The precursor is selected from the group consisting essentially of 1-methylsilane (1MS), 2-methylsilane (2MS), 3-methylsilane (3MS), 4-methylsilane (4MS), and combinations thereof.
1. A method of forming an interconnect structure, the method comprising:
forming a metal feature in a dielectric layer; and
forming an etch stop layer (ESL) directly over the metal feature and the dielectric layer, wherein the ESL is a single layer comprising oxygen doped (silicon) carbide (ODC), and wherein the ESL is formed using precursors comprising:
a precursor selected from the group consisting essentially of 1-methylsilane (1MS), 2-methylsilane (2MS), 3-methylsilane (3MS), 4-methylsilane (4MS), and combinations thereof; and
a carbon-source gas comprising carbon, wherein the carbon-source gas comprises C 2 H 4 , and wherein the carbon-source gas is free from carbon dioxide (CO 2 ).
2. The method of claim 1 further comprising:
forming a low-k dielectric layer over the ESL; and
forming a metal line and a via in the low-k dielectric layer, wherein the metal line and the via are electrically coupled to the metal feature.
3. The method of claim 1 , wherein the ESL is in physical contact with the metal feature and the dielectric layer.
4. The method of claim 3 , wherein an entirety of the ESL is formed of a homogeneous material.
5. The method of claim 1 , wherein an entirety of the ESL is formed of ODC.
6. A method of forming an interconnect structure, the method comprising:
forming a first metal line extending from a top surface of a first low-k dielectric layer into the first low-k dielectric layer, wherein the first low-k dielectric layer is over a substrate; and
forming an etch stop layer (ESL) directly over and contacting the first metal line and the first low-k dielectric layer, wherein the ESL is a single layer, and wherein precursors used in the step of forming the ESL comprise a carbon-source gas, a boron-containing gas, and an additional precursor comprising silicon and carbon.
7. The method of claim 6 , wherein the additional precursor is selected from the group consisting essentially of 1-methylsilane (1MS), 2-methylsilane (2MS), 3-methylsilane (3MS), 4-methylsilane (4MS), and combinations thereof.
8. The method of claim 6 , wherein the carbon-source gas further comprises hydrogen.
9. The method of claim 8 , wherein the carbon-source gas is C x H y .
10. The method of claim 9 , wherein the carbon-source gas comprises C 2 H 4 .
11. The method of claim 6 further comprising:
forming a second low-k dielectric layer over the ESL; and
forming a second metal line and a via in the second low-k dielectric layer, wherein the second metal line and the via are electrically coupled to the first metal line.
12. The method of claim 11 further comprising forming a tetra-ethyl-ortho-silicate (TEOS) oxide layer between and contacting the ESL and the second low-k dielectric layer.
13. A method of forming an interconnect structure, the method comprising:
forming a metal feature in a dielectric layer; and
forming an etch stop layer (ESL) over and in physical contact with the metal feature and the dielectric layer, wherein the ESL is a single layer comprising nitrogen doped silicon carbide (SiN:C), and wherein the ESL is formed using precursors comprising:
a precursor selected from the group consisting essentially of 1-methylsilane (1MS), 2-methylsilane (2MS), 3-methylsilane (3MS), 4-methylsilane (4MS), and combinations thereof; and
a carbon-source gas comprising carbon, wherein the carbon-source gas comprises C 2 H 4 , and wherein the carbon-source gas is free from carbon dioxide (CO 2 ).
14. The method of claim 13 , wherein the precursors further comprise NH 3 .
15. The method of claim 13 , wherein the forming the ESL is performed using Plasma Enhanced Chemical Vapor Deposition (PECVD).
16. The method of claim 13 further comprising forming a tetra-ethyl-ortho-silicate (TEOS) oxide layer over and contacting the ESL.
17. The method of claim 13 further comprising:
forming a second low-k dielectric layer over the ESL; and
forming a second metal line and a via in the second low-k dielectric layer, wherein the second metal line and the via are electrically coupled to the metal feature.
18. The method of claim 13 , wherein an entirety of the ESL is formed of nitrogen doped silicon carbide.