Apparatus and method for controlling edge performance in an inductively coupled plasma chamber
The present invention generally provides methods and apparatus for controlling edge performance during process. One embodiment of the present invention provides an apparatus comprising a chamber body defining a process volume, a gas inlet configured to flow a process gas into the process volume, and a supporting pedestal disposed in the process volume. The supporting pedestal comprises a top plate having a substrate supporting surface configured to receive and support the substrate on a backside, and an edge surface configured to circumscribe the substrate along an outer edge of the substrate, and a height difference between a top surface of the substrate and the edge surface is used to control exposure of an edge region of the substrate to the process gas.
1. An apparatus for processing a substrate, comprising:
a chamber body encompassing a process volume;
a gas inlet configured to flow a process gas into the process volume; and
a supporting pedestal disposed in the process volume, wherein the supporting pedestal comprises:
a top plate having a substrate supporting surface, wherein the substrate supporting surface is a continuous ring, a recess on an upper surface of the top plate and circumscribed by the substrate supporting surface, and an edge surface circumscribing and extending radially outside of the substrate supporting surface;
a plurality of supporting islands protruding from the top plate radially outward the substrate supporting surface, wherein the plurality of supporting islands extend vertically higher than the substrate supporting surface and an inner surface of each of the plurality of supporting islands is separated from an outer edge of the substrate supporting surface by a groove; and
an edge ring disposed on the edge surface of the top plate and radially outward the plurality of supporting islands, wherein an upper surface of the substrate and an upper surface of the edge ring are disposed with a height difference between each other.
2. The apparatus of claim 1 , wherein the substrate supporting surface has a smaller diameter than the substrate.
3. The apparatus of claim 2 , wherein the edge surface is vertically lower than the upper surface of the substrate.
4. The apparatus of claim 3 , wherein the height difference between the upper surface of the substrate and the edge surface is within a range from about 0.25 inch to about 0.5 inch.
5. The apparatus of claim 3 , wherein the substrate supporting surface is an upper surface of the continuous ring and the continuous ring has a diameter smaller than a diameter of the substrate.
6. The apparatus of claim 3 , further comprising a plurality of lifting pins disposed in a plurality of pin holes formed through the top plate.
7. The apparatus of claim 6 , wherein each lift pin has a mushroom shaped head for preventing contamination.
8. The apparatus of claim 1 , further comprising a plurality lifting pins configured to lift the substrate from the substrate supporting surface and to retract under the substrate supporting surface of the top plate.
9. The apparatus of claim 1 , wherein the top plate comprises quartz.
10. The apparatus of claim 1 , further comprising a plasma generator configured to provide an inductively coupled plasma within the process volume.
11. The apparatus of dam 1 , wherein an inner surface of the edge ring surrounds outer surfaces of the plurality of the supporting islands.
12. A top plate for a supporting pedestal in a process chamber, comprising:
a body having substantially a plate shape, wherein the body has a substrate supporting surface and the substrate supporting surface is a continuous ring, a recess on an upper surface of the top plate and circumscribed by the substrate supporting surface, and an edge surface circumscribing and extending radially outside of the substrate supporting surface;
a plurality of supporting islands protruding from the body radially outward the substrate supporting surface, wherein the plurality of supporting islands extend vertically higher than the substrate supporting surface and an inner surface of each of the plurality of supporting islands is separated from an outer edge of the substrate supporting surface by a groove; and
an edge ring disposed on the edge surface of the body and radially outward the plurality of supporting islands, wherein an upper surface of the substrate and an upper surface of the edge ring are disposed with a height difference between each other.
13. The top plate of claim 12 , wherein the body comprises quartz.
14. The top plate of claim 12 , wherein the edge surface is vertically lower than the upper surface of the substrate, and the height difference between the upper surface of the substrate and the edge surface is within a range from about 0.25 inch to about 0.5 inch.
15. The top plate of claim 12 , wherein the substrate supporting surface is an upper surface of the continuous ring and the continuous ring has a diameter smaller than a diameter of the substrate.
16. The top plate of claim 12 , wherein the body includes a plurality of pin holes configured to receive lifting pins.
17. The top plate of claim 12 , wherein an inner surface of the edge ring surrounds outer surfaces of the plurality of the supporting islands.