Gaseous compositions comprising hydrogen fluoride and an alkylated ammonia derivative
A method of removing at least a portion of a silicon oxide material is disclosed. The silicon oxide is removed by exposing a semiconductor structure comprising a substrate and the silicon oxide to an ammonium fluoride chemical treatment and a subsequent plasma treatment, both of which may be effected in the same vacuum chamber of a processing apparatus. The ammonium fluoride chemical treatment converts the silicon oxide to a solid reaction product in a self-limiting reaction, the solid reaction product then being volatilized by the plasma treatment. The plasma treatment includes a plasma having an ion bombardment energy of less than or equal to approximately 20 eV. An ammonium fluoride chemical treatment including an alkylated ammonia derivative and hydrogen fluoride is also disclosed.
1. A gaseous composition consisting of a hydrogen fluoride gas, an alkylated ammonia derivative gas, and an inert carrier gas.
2. The gaseous composition of claim 1 , wherein the alkylated ammonia derivative gas comprises an amine compound selected from the group consisting of methyl amine, dimethyl amine, trimethyl amine, ethyl amine, diethyl amine, triethyl amine, isopropyl amine, dipropyl amine, n-propyl amine, n-butyl amine, sec-butyl amine, t-butyl amine, and mixtures thereof.
3. The gaseous composition of claim 1 , wherein the inert carrier gas comprises at least one of argon, xenon, neon, and helium.
4. The gaseous composition of claim 1 , wherein hydrogen fluoride gas and the alkylated ammonia derivative gas together constitute from approximately 0.05% by volume to approximately 20% by volume of the gaseous composition.
5. The gaseous composition of claim 1 , wherein the gaseous composition comprises a volumetric ratio of the hydrogen fluoride gas to the alkylated ammonia derivative gas of between approximately 1:1 and approximately 1:2.
6. The gaseous composition of claim 1 , wherein the alkylated ammonia derivative gas comprises a molecular formula of R x NH 3-x , where x is an integer greater than or equal to one and R is an alkyl group.
7. The gaseous composition of claim 6 , wherein the alkyl group comprises at least one of a methyl group, an ethyl group, a propyl group, and a butyl group.
8. The gaseous composition of claim 1 , wherein the gaseous composition is devoid of particulate matter.
9. A gaseous composition consisting of a hydrogen fluoride gas, an alkylated ammonia derivative gas, and a non-reactive gas.
10. The gaseous composition of claim 9 , wherein the alkylated ammonia derivative gas comprises methyl amine.