Etching method and non-transitory storage medium
Provided is a method of selectively etching a portion of silicon existing on a surface of a substrate to be processed, which includes: loading the substrate to be processed into a chamber; and supplying an FNO gas and an F 2 gas that are diluted with an inert gas into the chamber such that the FNO gas and the F 2 gas are reacted with the portion of silicon existing on the surface of the substrate to be processed.
1. A method of selectively etching a portion of silicon existing on a surface of a substrate to be processed, the method comprising:
loading the substrate to be processed into a chamber; and
supplying an FNO gas and an F 2 gas that are diluted with an inert gas into the chamber such that the FNO gas and the F 2 gas are reacted with the portion of silicon existing on the surface of the substrate to be processed.
2. The method of claim 1 , wherein the portion of silicon is a polysilicon film.
3. The method of claim 1 , wherein the portion of silicon existing on the surface of the substrate to be processed is etched at a high etching selectivity compared to other portions formed adjacent to the portion of silicon.
4. The method of claim 3 , wherein the other portion includes a portion of silicon nitride.
5. The method of claim 1 , wherein the FNO gas is generated by reaction between the F 2 gas and an NO gas.
6. The method of claim 1 , wherein a density of the FNO gas is in a range of 0.5 to 3.0% in a volume ratio, and a density of the F 2 gas is in a range of 0.01 to 3.0% in a volume ratio.
7. The method of claim 1 , wherein a volume ratio of the FNO gas to the F 2 gas is in a range of 30:1 to 1:1.
8. The method of claim 1 , wherein the inert gas includes at least one selected from a group consisting of a nitrogen (N 2 ) gas, argon (Ar) gas, and helium (He) gas.
9. The method of claim 1 , wherein a volume ratio of the sum of the FNO gas and the F 2 gas to the inert gas is in a range of 1:150 to 1:10.
10. The method of claim 3 , wherein during the etching, a temperature of a mounting table configured to mount the substrate to be processed thereon inside the chamber is set to be in a range of 50 to 200 degrees C.
11. The method of claim 3 , wherein during the etching, an internal pressure of the chamber is set to be in a range of 1 to 100 Torr.
12. The method of claim 1 , further comprising: after reacting the FNO gas and the F 2 gas with the portion of silicon existing on the surface of the substrate to be processed, heating the substrate to be processed inside another chamber to remove reaction products adhered onto the substrate to be processed.
13. A non-transitory storage medium having a control program that operates on a computer and controls an etching apparatus stored thereon,
wherein the control program, when executed, causes the computer to perform the method of claim 1 using the etching apparatus.