Plasma etching method
A plasma etching method using a plasma etching apparatus including a lower electrode and an upper electrode is provided. The plasma etching method includes a first etching step of performing plasma etching using a first process gas and a second etching step of performing the plasma etching using a second process gas. The adhesion of a radical of the second process gas to an object of processing is less than the adhesion of a radical of the first process gas to the object of processing. While alternately repeating a first condition of turning on high-frequency electric power for plasma generation and a second condition of turning off the high-frequency electric power, the second etching step applies a negative direct-current voltage to the upper electrode so that the absolute value of the applied voltage is greater in a period of the second condition than in a period of the first condition.
1. A plasma etching method using a plasma etching apparatus, the plasma etching apparatus including a lower electrode that operates as a base for placing an object of processing and an upper electrode placed to face the lower electrode, the plasma etching method comprising:
a first etching step of performing plasma etching using a first process gas including a fluorocarbon gas; and
a second etching step of performing the plasma etching using a second process gas including a fluorocarbon gas, wherein adhesion of a radical of the second process gas to the object of processing is less than adhesion of a radical of the first process gas to the object of processing,
wherein while alternately repeating a first condition of turning on high-frequency electric power for plasma generation and a second condition of turning off the high-frequency electric power, the second etching step applies a negative direct-current voltage to the upper electrode so that an absolute value of the applied voltage is greater in a period of the second condition than in a period of the first condition, and
wherein the plasma etching method further comprises:
a third etching step of performing the plasma etching using a third process gas including a fluorocarbon gas between the first etching step and the second etching step,
wherein adhesion of a radical of the third process gas is less than the adhesion of the radical of the first process gas to the object of processing and is more than the adhesion of the radical of the second process gas to the object of processing.
2. The plasma etching method as claimed in claim 1 , wherein the plasma etching is performed while gradually decreasing an interval of the period of the second condition.
3. The plasma etching method as claimed in claim 1 , wherein the fluorocarbon gas included in the first process gas is C 4 F 6 , and
the fluorocarbon gas included in the second process gas is C 4 F 8 .
4. The plasma etching method as claimed in claim 1 , wherein a silicon oxide film is etched using a Poly-Si layer as a mask.