IP Library Granted Patent US 9,041,197
Granted Patent B2
US 9,041,197 · App. 14/482,422 · Granted May 26, 2015

Semiconductor device

Inventor: Takashi Motoda (Tokyo, JP)
Assignee: MITSUBISHI ELECTRIC CORPORATION
H01L33/32H01L23/4924H01L23/3733H01L23/3736H01S5/02236H01S5/02272H01S5/02476H01L2224/48091H01L2224/48465H01L2224/73265H01L33/30H01L33/486H01S5/3013H01L2924/1305
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Quick Facts
Patent No.
US 9,041,197
App. No.
14/482,422
Granted
May 26, 2015
Kind
B2
Abstract

A semiconductor device includes a semiconductor element having a substrate of GaAs, InP, or GaN, and an element securing member bonded to the semiconductor element by solder. The element securing member is a composite material of Cu and carbon or a composite of Al and carbon. A stem is connected to the element securing member, and a cap is secured to the stem. The cap covers the semiconductor element and the element securing member. The stem and the element securing member are made of the same material.

Claims (14)

1. A semiconductor device comprising:

a semiconductor element having a substrate of one of GaAs, InP, and GaN;

an element securing member bonded to said semiconductor element by solder, wherein said element securing member is composed of a composite of Cu and carbon;

a stem connected to said element securing member; and

a cap secured to said stem and covering said semiconductor element, and said element securing member, wherein said stem and said element securing member are the same material.

2. The semiconductor device according to claim 1 , wherein said stem and said element securing member are integral.

3. The semiconductor device according to claim 1 , further comprising an iron layer on a surface of said stem, wherein said cap is welded to said iron layer and thereby secured to said stem.

4. A semiconductor device comprising:

a semiconductor element having a substrate of one of GaAs, InP, and GaN;

an element securing member bonded to said semiconductor element by solder, wherein said element securing member is composed of a composite of Al and carbon;

a stem connected to said element securing member; and

a cap secured to said stem and covering said semiconductor element, and said element securing member, wherein said stem and said element securing member are the same material.

5. The semiconductor device according to claim 4 , wherein said stem and said element securing member are integral.

6. The semiconductor device according to claim 4 , further comprising an iron layer on a surface of said stem, wherein said cap is welded to said iron layer and thereby secured to said stem.

Priority Claims (1)
JP 2012-108513 · May 10, 2012 · national
Continuity (2)
Division 13742459 · Jan 16, 2013
Related Publication 20140374770A1 · Dec 25, 2014