IP Library › Granted Patent US 9,048,417
Granted Patent B2
US 9,048,417 · App. 14/464,835 · Granted Jun 2, 2015

Magnetic memory device

Inventors: Jangeun Lee (Suwon-si, KR); Sechung Oh (Suwon-si, KR); Jeahyoung Lee (Seoul, KR); Woojin Kim (Yongin-si, KR); Junho Jeong (Suwon-si, KR); Woo Chang Lim (Hwaseong-si, KR)
Assignee: Samsung Electronics Co., Ltd.
H01L43/10B82Y25/00H01F10/123H01F10/3254H01F10/3272H01F10/3286H01L43/08H01L43/02H01L27/222
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Quick Facts
Patent No.
US 9,048,417
App. No.
14/464,835
Granted
Jun 2, 2015
Kind
B2
Abstract

A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer.

Claims (19)

1. A magnetic memory device comprising:

a fixed layer comprising;

a first contact magnetic layer including CoFeB and having a first saturation magnetization;

a vertical magnetic layer having perpendicular magnetization; and

an exchange coupling layer disposed between the first contact magnetic layer and the vertical magnetic layer;

a free layer comprising a second contact magnetic layer including CoFeB and having a second saturation magnetization; and

a tunnel barrier layer disposed between the free layer and the fixed layer,

wherein the first saturation magnetization is higher than the second saturation magnetization.

2. The magnetic memory device of claim 1 , wherein a thickness of the first contact magnetic layer is smaller than a thickness of the vertical magnetic layer.

3. The magnetic memory device of claim 1 , wherein the vertical magnetic layer comprises at least one of Cr, Pt, Pd, or Ir.

4. A magnetic memory device comprising:

a fixed layer comprising;

a first contact magnetic layer including CoFeB;

a vertical magnetic layer having perpendicular magnetization; and

an exchange coupling layer disposed between the first contact magnetic layer and the vertical magnetic layer;

a free layer comprising a second contact magnetic layer including CoFeB; and

a tunnel barrier layer disposed between the free layer and the fixed layer.

5. The magnetic memory device of claim 4 , wherein a thickness of the first contact magnetic layer is smaller than a thickness of the vertical magnetic layer.

6. The magnetic memory device of claim 4 , wherein the vertical magnetic layer comprises at least one of Cr, Pt, Pd, or Ir.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 21, 2014
From: LEE, JANGEUN; OH, SECHUNG; LEE, JEAHYOUNG; KIM, WOOJIN; JEONG, JUNHO; LIM, WOOCHANG
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 034562/0636 →
Priority Claims (1)
KR 10-2010-0037017 · Apr 20, 2010 · national
Continuity (3)
Continuation 13926048 · Jun 25, 2013
Continuation 13091215 · Apr 21, 2011
Related Publication 20140353784A1 · Dec 4, 2014