Semiconductor packages including a heat spreader and methods of forming the same

1. A semiconductor package comprising:

a first semiconductor chip comprising a plurality of through-silicon vias (TSVs);

a plurality of connection terminals on a first surface of the first semiconductor chip and respectively connected to the plurality of TSVs;

a second semiconductor chip on a second surface of the first semiconductor chip;

a thermal interface material (TIM) layer on the first semiconductor chip and in contact with side surfaces of the second semiconductor chip;

a heat spreader on the second semiconductor chip and the TIM layer;

a substrate on the first surface of the first semiconductor chip such that the first semiconductor chin is disposed between the second semiconductor chip and the substrate; and

an underfill layer between the first semiconductor chip and the substrate,

wherein side surfaces of the first semiconductor chip, the TIM layer, and the heat spreader are substantially coplanar with each other,

wherein an edge portion of the first surface of the first semiconductor chip comprises a recess defined by a portion of a scribe lane,

wherein the side surface of the first semiconductor chip terminates at the recess, and

wherein the underfill layer only partially extends on the side surface of the first semiconductor chip.

2. The semiconductor package of claim 1 , wherein:

the second semiconductor chip has a horizontal width smaller than a horizontal width of the first semiconductor chip; and

the TIM layer covers an upper surface and the side surfaces of the second semiconductor chip.

3. The semiconductor package of claim 1 , wherein the heat spreader is in direct contact with the second semiconductor chip.

4. The semiconductor package of claim 1 , wherein:

the first surface of the first semiconductor chip extends in a first direction and the side surface of the first semiconductor chip extends in a second direction; and

an angle between the first direction and the second direction is an obtuse angle.

5. The semiconductor package of claim 1 , wherein:

the recess comprises a first recess, and the scribe lane comprises a first scribe lane;

an edge portion of a first surface of the heat spreader comprises a second recess defined by a portion of a second scribe lane; and

the side surface of the heat spreader terminates at the second recess.

6. The semiconductor package of claim 5 , wherein:

the first surface of the heat spreader extends in a first direction and the side surface of the heat spreader extends in a second direction; and

an angle between the first direction and the second direction is an obtuse angle.

7. The semiconductor package of claim 1 , wherein the substrate is connected to the plurality of connection terminals.

8. The semiconductor package of claim 7 ,

wherein the plurality of connection terminals pass through the underfill layer and are connected to the TSVs and the substrate.

9. The semiconductor package of claim 7 , further comprising an encapsulant on the substrate covering the side surfaces of the first semiconductor chip, the TIM layer, and the heat spreader.

10. The semiconductor package of claim 9 , wherein:

the encapsulant extends between the first semiconductor chip and the substrate; and

the plurality of connection terminals pass through the encapsulant and are connected to the TSVs and the substrate.

11. A semiconductor package comprising:

a first semiconductor chip;

a second semiconductor chip on the first semiconductor chip, wherein the first and second semiconductor chips are electrically connected to each other;

a heat spreader on the second semiconductor chip such that the second semiconductor chip is between the first semiconductor chip and the heat spreader;

a thermal interface material (TIM) layer surrounding the second semiconductor chip and directly contacting a sidewall of the second semiconductor chip, the TIM layer comprising aluminum oxide and/or zinc oxide;

a substrate under the first semiconductor chip such that the first semiconductor chip is disposed between the second semiconductor chin and the substrate; and

an underfill layer between the first semiconductor chip and the substrate, wherein the underfill layer only partially extends on a sidewall of the first semiconductor chip,

wherein an upper surface of the TIM layer directly contacts a lower surface of the heat spreader, and a sidewall of the TIM layer is substantially coplanar with a sidewall of the heat spreader,

wherein the heat spreader comprises an upper surface opposite the lower surface, and

wherein an edge portion of the upper surface of the heat spreader comprises a recess defined by a portion of a scribe lane.

12. The semiconductor package of claim 11 , wherein:

the first semiconductor chip has a first width greater than a second width of the second semiconductor chip when viewed in cross section; and

the sidewall of the first semiconductor chip is substantially coplanar with the sidewall of the TIM layer.

13. The semiconductor package of claim 12 , wherein:

the recess comprises a first recess, and the scribe lane comprises a first scribe lane;

the first semiconductor chip comprises a first surface facing the second semiconductor chip and a second surface opposite the first surface; and

an edge portion of the second surface of the first semiconductor chip comprises a second recess defined by a portion of a second scribe lane.

14. The semiconductor package of claim 11 , wherein an upper surface of the second semiconductor chip directly contacts the lower surface of the heat spreader.

15. A semiconductor package comprising:

a first semiconductor chip comprising a plurality of through-silicon vias (TSVs);

a plurality of connection terminals on a first surface of the first semiconductor chip and respectively connected to the plurality of TSVs;

a second semiconductor chip on a second surface of the first semiconductor chip;

a thermal interface material (TIM) layer on the first semiconductor chip and in contact with side surfaces of the second semiconductor chip;

a heat spreader on the second semiconductor chip and the TIM layer, wherein side surfaces of the first semiconductor chip, the TIM layer, and the heat spreader are substantially coplanar with each other;

a substrate under the first semiconductor chip such that the first semiconductor chip is disposed between the second semiconductor chip and the substrate, wherein the substrate is connected to the plurality of connection terminals;

an underfill layer between the first semiconductor chip and the substrate, wherein the plurality of connection terminals pass through the underfill layer and are connected to the TSVs and the substrate,

wherein the underfill layer only partially extends on the side surface of the first semiconductor chip.

16. The semiconductor package of claim 15 , wherein the TIM layer comprises aluminum oxide and/or zinc oxide.

17. The semiconductor package of claim 15 , wherein:

the second semiconductor chip has a horizontal width smaller than a horizontal width of the first semiconductor chip; and

the TIM layer covers an upper surface and the side surfaces of the second semiconductor chip.

18. The semiconductor package of claim 15 , wherein the heat spreader is in direct contact with the second semiconductor chip.

19. The semiconductor package of claim 15 , further comprising an encapsulant on the substrate covering the side surfaces of the first semiconductor chip, the TIM layer, and the heat spreader.

20. The semiconductor package of claim 19 , wherein:

the encapsulant extends between the first semiconductor chip and the substrate; and

the plurality of connection terminals pass through the encapsulant and are connected to the TSVs and the substrate.