Method of manufacturing three dimensional semiconductor memory device
A method of manufacturing a three-dimensional semiconductor memory device is provided. The method includes alternately stacking a first insulation film, a first sacrificial film, alternating second insulation films and second sacrificial films, a third sacrificial film and a third insulation film on a substrate. A channel hole is formed to expose a portion of the substrate while passing through the first insulation film, the first sacrificial film, the second insulation films, the second sacrificial films, the third sacrificial film and the third insulation film. The method further includes forming a semiconductor pattern on the portion of the substrate exposed in the channel hole by epitaxial growth. Forming the semiconductor pattern includes forming a lower epitaxial film, doping an impurity into the lower epitaxial film, and forming an upper epitaxial film on the lower epitaxial film. Forming the lower epitaxial film, doping the impurity into the lower epitaxial film and forming the upper epitaxial film are all performed in-situ, and the semiconductor pattern includes a doped region and an undoped region.
1. A method of forming a three dimensional semiconductor memory device, the method comprising:
stacking a first insulation film, a first sacrificial film, alternating second insulation films and second sacrificial films, a third sacrificial film and a third insulation film on a substrate;
forming a channel hole through the first insulation film, the first sacrificial film, the second insulation films, the second sacrificial films, the third sacrificial film and the third insulation film, the channel hole exposing a portion of the substrate; and
forming a semiconductor pattern on the portion of the substrate exposed in the channel hole,
wherein forming the semiconductor pattern comprises forming a lower epitaxial film on the substrate, doping an impurity into the lower epitaxial film, and forming an upper epitaxial film on the lower epitaxial film,
wherein forming the lower epitaxial film, doping of impurity into the lower epitaxial film and forming of the upper epitaxial film are performed in-situ, and
wherein the semiconductor pattern includes a doped region and an undoped region.
2. The method of claim 1 , wherein the channel hole extends into the substrate by a first depth, and wherein a thickness of the lower epitaxial film is about equal to the first depth.
3. The method of claim 2 , further comprising doping the upper epitaxial film while the upper epitaxial film is being formed.
4. The method of claim 1 , further comprising forming a vertical channel on sidewalls of the channel hole.
5. The method of claim 4 , wherein a bottom surface of the vertical channel makes contact with the undoped region of the semiconductor pattern.
6. The method of claim 1 , wherein a lateral surface of the lower sacrificial film exposed on the sidewalls of the channel hole and the doped region of the semiconductor pattern overlap each other.
7. The method of claim 1 , wherein the undoped region of the semiconductor pattern is formed between a bottom surface of the vertical channel and the doped region of the semiconductor pattern.
8. The method of claim 1 , wherein doping the impurity into the lower epitaxial film is performed by a gas phase doping process.
9. The method of claim 4 , further comprising forming a trench exposing the substrate, wherein the trench passes passing through the first insulation film, the first sacrificial film, the second insulation films, the second sacrificial films, the third sacrificial film and the third insulation film.
10. The method of claim 9 , further comprising;
forming an insulation spacer on inner walls of the trench;
forming an impurity region in the exposed portion of the substrate; and
forming a common source line in the trench and making contact with the impurity region.
11. The method of claim 10 , further comprising;
forming a fourth insulation film on the common source line, the insulation spacer and the vertical channel;
forming a bit line contact plug electrically connected to the vertical channel while passing through the fourth insulation film; and
forming a bit line on the fourth insulation film and the bit line contact plug.
12. The method of claim 4 , further comprising forming a charge storage layer on the sidewails of the channel hole before forming the vertical channel.
13. The method of claim 12 , wherein forming the charge storage layer comprises forming a blocking insulation film, charge trap film and a tunnel insulation film on the sidewails of the channel hole.
14. The method of claim 1 , further comprising:
removing the first sacrificial film, the second sacrificial films and the third sacrificial film; and
forming a ground select gate electrode, cell gate electrodes and a string gate electrode in regions from which the first sacrificial film, the second sacrificial films and the third sacrificial film are removed.
15. A method of forming a three dimensional semiconductor memory device, the method comprising:
stacking a first insulation film, a first sacrificial film, alternating second insulation films and second sacrificial films, a third sacrificial film and a third insulation film on a substrate;
forming a channel hole that exposes a portion of the substrate, wherein the channel hole passes through the first insulation film, the first sacrificial film, the second insulation films, the second sacrificial films, the third sacrificial film and the third insulation film; and
doping an impurity into a semiconductor pattern while forming the semiconductor pattern on the portion of the substrate exposed in the channel hole by selective epitaxial growth,
wherein the semiconductor pattern includes a doped region and an undoped region.
16. The method of claim 15 , wherein the undoped region comprises a first undoped region on the doped region and the substrate, and wherein the method further includes forming a second undoped region between the substrate and the doped region.
17. The method of claim 15 , wherein forming the semiconductor pattern comprises forming a lower epitaxial film on the exposed portion of the substrate and forming an upper epitaxial film on the lower epitaxial film.
18. The method of claim 17 , further comprising doping the lower epitaxial film by gas phase doping after forming the lower epitaxial film.
19. The method of claim 18 , further comprising doping a portion of the upper epitaxial film during growth of the upper epitaxial film.
20. A method of forming a three dimensional semiconductor memory device, the method comprising:
forming an alternating stack of insulation films and sacrificial films on a substrate;
forming a channel hole through the alternating stack of insulation films and sacrificial films, the channel hole exposing a portion of the substrate and extending into the substrate; and
forming a semiconductor pattern on the portion of the substrate exposed in the channel hole,
wherein the semiconductor pattern includes a first undoped region on the substrate, a doped region on the first undoped region, and a second undoped region on the doped region opposite the first undoped region.