Polycrystalline silicon rod
A polycrystalline silicon rod comprises a seed rod made of polycrystalline silicon, and a polycrystalline silicon deposit which is deposited on the outer circumferential surface of the seed rod by the CVD process. A diameter of the polycrystalline silicon rod is 77 mm or less. When the polycrystalline silicon rod is observed by an optical microscope with respect to the cross section perpendicular to an axis of the seed rod, needle-shaped crystals each having a length of 288 μm or less are uniformly distributed radially with the seed rod being as the center in the polycrystalline silicon deposit. The needle-shaped crystals account for 78% or more of the cross section.
1. A polycrystalline silicon rod comprising a seed rod made of polycrystalline silicon, and a polycrystalline silicon deposit which is deposited on an outer circumferential surface of the seed rod by the CVD process,
wherein a diameter of the polycrystalline silicon rod is 77 mm or less,
wherein when the polycrystalline silicon rod is observed by an optical microscope with respect to across section perpendicular to an axis of the seed rod, needle-shaped crystals each having a length of 288 μm or less are uniformly distributed radially with the seed rod being as the center in the polycrystalline silicon deposit, and
wherein said needle-shaped crystals account for 78% or more area of the cross section.
2. The polycrystalline silicon rod according to claim 1 , wherein when the polycrystalline silicon rod is observed with respect to the cross section perpendicular to the axis of the seed rod, lengths and widths of the needle-shaped crystals at a position away by 5 mm from the outer circumferential surface of the seed rod toward the outside in the radial direction thereof on the same circumference with the axis of the seed rod being as the center are distributed so that said lengths and said widths are respectively 115 μm or less and is 23 μm or less.
3. The polycrystalline silicon rod according to claim 1 ,
wherein when the polycrystalline silicon rod is observed with respect to the cross section perpendicular to the axis of the seed rod, lengths and widths of the needle-shaped crystals at a position away by 10 mm from the outer circumferential surface of the seed rod toward the outside in the radial direction thereof on the same circumference with the axis of the seed rod being as the center are distributed so that said lengths and said widths are respectively 225 μm or less and is 55 μm or less.
4. The polycrystalline silicon rod according to claim 1 ,
wherein when the polycrystalline silicon rod is observed with respect to the cross section perpendicular to the axis of the seed rod, lengths and widths of the needle-shaped crystals at a position away by 25 mm from the outer circumferential surface of the seed rod toward the outside in the radial direction thereof on the same circumference with the axis of the seed rod being as the center are distributed so that said lengths and said widths are respectively 288 μm or less and is 48 μm or less.
5. The polycrystalline silicon rod according to claim 1 ,
wherein when the polycrystalline silicon rod is observed with respect to the cross section perpendicular to the axis of the seed rod, lengths and widths of the needle-shaped crystals in the seed rod are distributed so that said lengths and said widths are respectively 135 μm or less and is 45 μm or less.
6. A polycrystalline silicon rod comprising a seed rod made of polycrystalline silicon, and a polycrystalline silicon deposit deposited on an outer circumferential surface of the seed rod by the CVD process,
wherein a diameter of the polycrystalline silicon rod is above 77 mm,
wherein when the polycrystalline silicon rod is observed by an optical microscope with respect a cross section perpendicular to an axis of the seed rod, needle-shaped crystals each having a length of 291 μm or less are radially and uniformly distributed with the seed rod being as the center in the polycrystalline silicon deposit, and
wherein said needle-shaped crystals account for 15% to 35% area of the cross section within a region having a diameter of 127 mm.
7. The polycrystalline silicon rod according to claim 6 ,
wherein the diameter of the polycrystalline silicon rod is 153 mm or less.