Semiconductor device and method for manufacturing semiconductor device

1. A semiconductor device, comprising:

a semiconductor-element substrate, wherein an electrode pattern is formed on one surface of an insulating substrate and a back-surface electrode is formed on the other surface of the insulating substrate;

a stress-relaxation adhesive layer made of resin which covers at least a part of a portion of the surface of the insulating substrate where the electrode pattern and the back-surface electrode are not formed and a part of portion of a surface of the electrode pattern;

a semiconductor element affixed, via a bonding material, to the surface of the electrode pattern opposite the insulating substrate;

a first sealing resin member which covers the semiconductor element and the semiconductor-element substrate; and

a partition wall made of resin whose height is higher than height of the semiconductor element and formed so as to enclose the periphery of the semiconductor-element substrate at a side of the semiconductor-element substrate where the semiconductor element is affixed,

wherein the first sealing resin member fills the inside of the partition wall, a coefficient of linear thermal expansion of the first sealing resin member is closer to a coefficient of linear thermal expansion of the electrode pattern than a coefficient of linear thermal expansion of the insulating substrate, a modulus of elasticity of the stress-relaxation adhesive layer is lower than a modulus of elasticity of the first sealing resin member, and a modulus of elasticity of the partition wall is lower than the modulus of elasticity of the first sealing resin member.

2. A semiconductor device according to claim 1 ,

wherein an area of a portion of the semiconductor-element substrate, where the electrode pattern or the back-surface electrode is not formed, which is covered with the stress-relaxation adhesive layer, is 80% or more of an area where the electrode pattern or the back-surface electrode is not formed.

3. A semiconductor device according to claim 1 ,

wherein an area of the electrode pattern, which is covered with the stress-relaxation adhesive layer, is 50% or less of a surface area of the electrode pattern.

4. A semiconductor device, according to claim 1 , wherein the stress-relaxation adhesive layer and the partition wall are made of different resins.

5. A semiconductor device according to claim 1 , wherein the stress-relaxation adhesive layer and the partition wall are made of a same resin.

6. A semiconductor device according to claim 1 , wherein a plurality of the semiconductor-element substrates are provided, and the partition walls are formed so as to enclose a periphery of each of the semiconductor-element substrates.

7. A semiconductor device according to claim 1 , further comprising a second searing resin member which covers the first sealing resin member and the partition wall and whose modulus of elasticity is lower than the modulus of elasticity of the first sealing resin member.

8. A semiconductor device according to claim 1 , wherein the modulus of elasticity of the stress-relaxation adhesive layer is in a range of 30 kPa to 1 GPa, and the modulus of elasticity of the first sealing resin member is in a range of 1 GPa to 20 GPa.

9. A semiconductor device according to claim 1 , wherein the modulus of elasticity of the stress-relaxation adhesive layer is in a range of 30 kPa to 1 GPa, and the modulus of elasticity of the first sealing resin member is in a range of 1 GPa to 20 GPa.

10. A semiconductor device according to claim 1 , wherein the modulus of elasticity of the partition wall is in a range of 30 kPa to 1 GPa, and the modulus of elasticity of the first sealing resin member is in a range of 1 GPa to 20 GPa.

11. A semiconductor device according to claim 1 , wherein the semiconductor element is formed of a wide band gap semiconductor.

12. A semiconductor device according to claim 11 , wherein the wide band gap semiconductor is a semiconductor selected from a silicon carbide, a gallium nitride based material, and diamond.

13. A method for manufacturing a semiconductor device according to claim 5 ,

wherein the partition wall and the stress-relaxation adhesive layer are formed by a method comprising:

sandwiching a semiconductor-element substrate by an upper jig and a lower jig having a resin injection hole therein;

placing the semiconductor-element substrate which is sandwiched by the upper and lower jigs in a reduced-pressure environment;

injecting an uncured resin from the injection hole under the reduced-pressure environment; and

taking out the semiconductor-element substrate from the reduced-pressure environment into atmospheric pressure environment, curing the injected resin, and then dividing the upper and lower jigs.

14. A method for manufacturing a semiconductor device according to claim 13 ,

wherein a surface of the semiconductor-element substrate expect for a part where the electrode pattern and the back-surface electrode are formed and a part where the partition wall is formed is connected by a space inside the jigs.

15. A semiconductor device, comprising: a semiconductor-element substrate, wherein an electrode pattern is formed on one surface of an insulating substrate and a back-surface electrode is formed on the other surface of the insulating substrate;

a semiconductor element affixed, via a bonding material, to the surface of the electrode pattern opposite the insulating substrate;

a partition wall made of resin, whose height is higher than a height of the semiconductor element, and which is formed so as to enclose a periphery of a semiconductor- element substrate, and which is formed at a side of the semiconductor-element substrate where the semiconductor element is affixed;

a first sealing resin member which covers an inside of the partition wall, the semiconductor element and the semiconductor-element substrate,

wherein a coefficient of linear thermal expansion of the first sealing resin member is closer to a coefficient of linear thermal expansion of the electrode pattern than a coefficient of linear thermal expansion of the insulating substrate, and a modulus of elasticity of the partition wall is lower than a modulus of elasticity of the first sealing resin member; and

a second sealing resin member which covers the first sealing resin member and the partition wall, and whose modulus of elasticity is lower than the modulus of elasticity of the first sealing resin member.

16. A semiconductor device according to claim 15 , wherein the semiconductor element is formed of a wide band gap semiconductor.

17. A semiconductor device according to claim 16 , wherein the wide band gap semiconductor is a semiconductor selected from a silicon carbide, a gallium nitride based material, and diamond.