Resist composition and patterning process
A polymer capable of increasing alkali solubility under the action of acid, as a base resin is blended with a copolymer comprising recurring units derived from (meth)acrylate, vinyl ether, vinylfluorene, vinylanthracene, vinylpyrene, vinylbiphenyl, stilbene, styrylnaphthalene or dinaphthylethylene, and fluorine-containing recurring units, as a polymeric additive to formulate a resist composition. The photoresist film formed using the resist composition is effective for minimizing outgassing therefrom during the EUV lithography. The resist film has a hydrophilic surface and is effective for suppressing formation of blob defects after development.
1. A resist composition comprising a base resin and a copolymer,
wherein the base resin compromises a polymer capable of increasing alkali solubility under the action of acid, and
the copolymer has the general formula (1):
wherein R 6 and R 9 each are hydrogen or methyl,
R 3 and R 4 each are hydrogen, hydroxyl, C 1 -C 10 straight, branched or cyclic alkyl, alkoxy, acyloxy, C 2 -C 6 alkenyl, C 6 -C 10 aryl, or —OC(═)R, wherein R is a C 1 -C 6 straight or branched alkyl or fluoroalkyl, cyano, nitro, amino group or halogen atom,
R 5 is fluorenyl, anthracenyl, or pyrenyl,
X 2 and X 3 each are phenylene or naphthylene,
Y 2 is a single bond, —O—, —C(═O)—O—R 11 — or —C(═O) —NH—R 11 —, wherein R 11 is a single bond or a C 1 -C 4 straight or branched alkylene group which may contain an ester or ether moiety,
m is an integer of 1 to 5, n is 1 or 2,
in case of n=1, Y 1 is a single bond, —O—, —C(═O)—O—R 11 — or —C(═O)—NH—R 11 , wherein R 11 is a single bond or a C 1 -C 4 straight or branched alkylene group which may be substituted with fluorine and which may contain an ester or ether moiety,
in case of n=2, Y 1 is —C(═O)—O—R 12 ═ or —C(═O)—NH—R 12 ═, wherein R 12 is a trivalent group obtained by eliminating one hydrogen from a C 1 -C 10 straight, branched or cyclic alkylene group, which may be substituted with fluorine and which may contain an ester or ether moiety,
R 7 is a C 1 -C 12 straight, branched or cyclic alkylene group, phenylene group, or a combination thereof, which may be substituted with fluorine and which may contain an ester or ether moiety,
R 8 is hydrogen, fluorine, methyl, trifluoromethyl or difluoromethyl, or R 8 may bond with R 7 to form a ring which may have an ether, fluorinated alkylene or trifluoromethyl moiety,
R 10 is a C 1 -C 20 straight, branched or cyclic alkyl group which is substituted with at least one fluorine atom and which may contain an ether, ester or sulfonamide moiety,
subscripts p-2, p-3, q-1 and q-2 are numbers in the range: 0≦(p-2)<1.0, 0≦(p-3)<1.0, 0<(p-2)+(p-3)<1.0, 0≦(q-1)<1.0, 0≦(q-2)<1.0, 0<(q-1)+(q-2)<1.0, and 0.5≦(p-2)+(p-3)+(q-1)+(q-2)≦1.0,
wherein the copolymer is blended in an amount of 0.1 and 20 parts by weight per 100 parts by weight of the base resin.
2. The resist composition of claim 1 which is a chemically amplified positive resist composition.
3. The resist composition of claim 1 wherein the polymer serving as a base resin comprises recurring units having an acid labile group and recurring units having a hydroxyl group and/or lactone ring as an adhesive group.
4. The resist composition of claim 3 wherein the polymer serving as a base resin comprises recurring units of at least one type selected from recurring units (a1) and (a2) having a carboxyl and/or phenolic hydroxyl group substituted with an acid labile group, as represented by the general formula (2), and recurring units having a phenolic hydroxyl group and/or lactone ring as an adhesive group and has a weight average molecular weight of 1,000 to 500,000,
wherein R 13 and R 15 are each independently hydrogen or methyl, R 14 and R 16 each are an acid labile group, Y 3 is a single bond, a C 1 -C 12 linking group having at least one of ester, lactone ring, phenylene and naphthylene, a phenylene group or a naphthylene group, Y 4 is a single bond, ester group or amide group, subscripts a1 and a2 are numbers in the range: 0≦a1≦0.9, 0 ≦a2≦0.9, and 0<a1+a2<1.0.
5. The resist composition of claim 4 wherein the polymer comprising recurring units of at least one type selected from recurring units (a1) and (a2) having a carboxyl and/or phenolic hydroxyl group substituted with an acid labile group, represented by the general formula (2), has further copolymerized therein recurring units of at least one type selected from sulfonium salt units (b1) to (b3), as represented by the general formula (3),
wherein R 020 , R 024 , and R 028 each are hydrogen or methyl, R 021 is a single bond, phenylene, —O—R 033 —, or —C(═O)—Y—R 033 —, Y is oxygen or NH, R 033 is a straight, branched or cyclic C 1 -C 6 alkylene group, alkenylene group or phenylene group, which may contain a carbonyl (—CO—), ester (—COO—), ether (—O—), or hydroxyl moiety, R 022 , R 023 , R 025 , R 026 , R 027 , R 029 , R 030 , and R 031 are each independently a straight, branched or cyclic C 1 -C 12 alkyl group which may contain a carbonyl, ester or ether moiety, a C 6 -C 12 aryl group, a C 7 -C 20 aralkyl group, or a thiophenyl group, Z 1 is a single bond, methylene, ethylene, phenylene, fluorinated phenylene, —O—R 032 —, or —C(═O)—Z 2 —R 032 —, Z 2 is oxygen or NH, R 032 is a straight, branched or cyclic C 1 -C 6 alkylene group, alkenylene group or phenylene group, which may contain a carbonyl, ester, ether or hydroxyl moiety, M − is a non-nucleophilic counter ion, subscripts b1, b2 and b3 are numbers in the range: 0≦b1≦0.3, 0≦b2≦0.3, 0≦b3≦0.3, and 0<b1+b2+b3≦0.3.
6. The resist composition of claim 1 , further comprising at least one of an organic solvent, basic compound, dissolution regulator, and surfactant.
7. A pattern forming process comprising the steps of applying the resist composition of claim 1 onto a substrate to form a coating, baking, exposing the coating to high-energy radiation, and developing the exposed coating in a developer.
8. The process of claim 7 wherein the high-energy radiation is KrF excimer laser of wavelength 248 nm, ArF excimer laser of wavelength 193 nm, electron beam or soft x-ray of wavelength 3 to 15 nm.