Thin film transistor array panel
A thin film transistor (TFT) array panel includes: first and second pixel electrodes neighboring each other; a data line extending between the first and the second pixel electrodes; first and second gate lines extending perpendicularly to the data line; a first TFT including a first gate electrode connected to the first gate line, a first source electrode connected to the data line, and a first drain electrode facing the first source electrode and connected to the first pixel electrode; and a second TFT including a second gate electrode connected to the second gate line, a second source electrode connected to the data line, and a second drain electrode facing the second source electrode and connected to the second pixel electrode. The first source electrode has the same relative position with respect to the first drain electrode as the second source electrode with respect to the second drain electrode.
1. A thin film transistor array panel comprising:
a plurality of pixel electrodes formed in rows and columns;
a plurality of data lines extending in a first direction, wherein one data line of the plurality of data lines is disposed every two pixel electrode columns; and
a plurality of gate lines extending in a second direction, wherein a pair of gate lines is disposed at each pixel electrode row,
wherein the pair of gate lines disposed at a first pixel electrode row include a first gate line and a second gate line neighboring each other,
the first pixel electrode row includes a first pixel electrode connected to the first gate line and a second pixel electrode connected to the second gate line,
the first pixel electrode covers the first gate line in the first direction and does not cover the second gate line, and
the second pixel electrode covers the second gate line in the first direction.
2. The thin film transistor array panel of claim 1 , wherein
the first pixel electrode of the first pixel electrode row covers the second gate line of a second pixel electrode row, wherein the second pixel electrode row is adjacent to the first pixel electrode row in the first direction.
3. The thin film transistor array panel of claim 2 , wherein
the first gate line connected to the first pixel electrode of the first pixel electrode row is applied with a gate-on voltage later than the second gate line of the second pixel electrode row.
4. The thin film transistor array panel of claim 1 , wherein
the second pixel electrode of the first pixel electrode row covers the first gate line of the first pixel electrode row in the first direction.
5. The thin film transistor array panel of claim 1 , wherein
the second pixel electrode of the first pixel electrode row does not cover the first gate line of the first pixel electrode row in the first direction.
6. A thin film transistor array panel comprising:
a plurality of data lines extending in a first direction, the data lines including a first data line and a second data line neighboring each other;
a plurality of gate lines extending in a second direction, the plurality of gate lines including a first gate line pair including a first gate line and a second gate line neighboring each other, and a second gate line pair including a third gate line and a fourth gate line neighboring each other, wherein the second gate line pair is spaced apart from the first gate line pair;
a pair of pixel electrodes including a first pixel electrode and a second pixel electrode surrounded by the first gate line pair, the second gate line pair, the first data line, and the second data line, the first pixel electrode being connected to the second gate line and the first data line, and the second pixel electrode being connected to the third gate line and the second data line,
wherein the first pixel electrode covers the second gate line in the first direction and does not cover the third gate line, and
the second pixel electrode covers the third gate line in the first direction.
7. The thin film transistor array panel of claim 6 , wherein the first pixel electrode further covers the first gate line in the first direction.
8. The thin film transistor array panel of claim 7 , wherein the second pixel electrode further covers the second gate line in the first direction.
9. The thin film transistor array panel of claim 8 , wherein gate-on voltages are applied in order to the first gate line, the second gate line, the third gate line, and the fourth gate line.
10. The thin film transistor array panel of claim 9 , wherein the first pixel electrode completely covers the first gate line in the first direction and the second pixel electrode completely covers the second gate line in the first direction.
11. The thin film transistor array panel of claim 8 , wherein the first pixel electrode completely covers the first gate line in the first direction and the second pixel electrode completely covers the second gate line in the first direction.
12. The thin film transistor array panel of claim 7 , wherein the first pixel electrode completely covers the first gate line in the first direction.
13. The thin film transistor array panel of claim 7 , wherein gate-on voltages are applied in order to the first gate line, the second gate line, the third gate line, and the fourth gate line.
14. The thin film transistor array panel of claim 6 , wherein the second pixel electrode covers the second gate line in the first direction.
15. The thin film transistor array panel of claim 14 , wherein gate-on voltages are applied in order to the first gate line, the second gate line, the third gate line, and the fourth gate line.
16. The thin film transistor array panel of claim 15 , wherein the second pixel electrode completely covers the second gate line in the first direction.
17. The thin film transistor array panel of claim 6 , wherein gate-on voltages are applied in order to the first gate line, the second gate line, the third gate line, and the fourth gate line.