Packaged integrated circuit devices with through-body conductive vias, and methods of making same

1. A method of manufacturing a semiconductor device, comprising:

encapsulating a semiconductor die with an encapsulant thereby forming a semiconductor structure having a front side and a back side, wherein the semiconductor die has an active surface generally flush with the front side, and side surfaces and a back surface embedded in the encapsulant, wherein the encapsulant is continuous;

forming a conductive line at the front side of the encapsulant and the active surface of the semiconductor die; and

forming a conductive via that extends from the front side to the back side of the semiconductor structure, the conductive via being in direct contact with the conductive line.

2. The method of claim 1 wherein encapsulating the semiconductor die includes:

placing the semiconductor die on a sacrificial structure with the active surface of the semiconductor die facing the sacrificial structure;

encapsulating the semiconductor die placed on the sacrificial structure; and

removing the sacrificial structure.

3. The method of claim 1 wherein forming the conductive via includes:

forming an opening in the encapsulant from the back side of the semiconductor structure to the conductive line at the front side of the semiconductor structure; and

filling the opening with a conductive material.

4. The method of claim 1 wherein the semiconductor die is a first semiconductor die, the method further including:

placing the first semiconductor die and a second semiconductor die on a sacrificial structure;

encapsulating the semiconductor die includes encapsulating both the first and second semiconductor dies with the encapsulant while the first and second semiconductor dies are on the sacrificial structure; and

thereafter, removing the sacrificial structure from the first and second semiconductor dies.

5. The method of claim 4 , further comprising:

singulating the encapsulated first and second semiconductor dies to form a first semiconductor structure and a second semiconductor structure; and

placing a conductive structure between the first and second semiconductor structures, the conductive structure electrically coupling conductive vias in the first and second semiconductor structures.

6. The method of claim 5 wherein the back surface of the first semiconductor die faces a back surface of the second semiconductor die.

7. The method of claim 5 wherein the back surface of the first semiconductor die faces an active surface of the second semiconductor die.

8. The method of claim 1 , further comprising:

placing a solderball in direct contact with the conductive via at the front side of the semiconductor structure.

9. A method of manufacturing a semiconductor device, comprising:

encapsulating a first semiconductor die with an encapsulant thereby forming a first semiconductor structure having a front side and a back side, the first semiconductor die having an active surface generally flush with the front side of the first semiconductor structure, and side surfaces and a back surface embedded in the encapsulant;

encapsulating a second semiconductor die with an encapsulant thereby forming a second semiconductor structure having a front side and a back side, the second semiconductor die having an active surface generally flush with the front side of the second semiconductor structure, and side surfaces and a back surface embedded in the encapsulant, wherein the back side of the first semiconductor structure faces the front side of the second semiconductor structure;

forming conductive lines on the front sides of the first and second semiconductor structures;

forming a conductive via that extends from the front side of the first semiconductor structure to the back side of the first semiconductor structure, the conductive via being in direct contact with the conductive lines.

10. The method of claim 9 wherein the conductive via is a first conductive via, the method further comprising:

forming a second conductive via that extends from the front side of the second semiconductor structure to the back side of the second semiconductor structure, the second conductive via being in direct contact with the conductive lines.

11. The method of claim 10 wherein the first conductive via and the second conductive via are axially aligned.

12. The method of claim 9 , wherein encapsulating the first and the second semiconductor dies includes:

placing the first and second semiconductor dies on a sacrificial structure with the active surfaces of the semiconductor dies facing the sacrificial structure;

encapsulating the semiconductor dies placed on the sacrificial structure; and

removing the sacrificial structure.

13. The method of claim 9 , wherein forming the conductive via includes:

forming an opening in the encapsulant from the back side of the first semiconductor structure to the conductive line at the front side of the first semiconductor structure; and

filling the opening with a conductive material.

14. The method of claim 9 , further comprising:

forming a third semiconductor structure having a front side and a back side by:

encapsulating a third semiconductor die with an encapsulant, wherein the third semiconductor die has an active surface generally flush with the front side of the third semiconductor structure, and a back surface embedded in the encapsulant, and

encapsulating a fourth semiconductor die with an encapsulant, wherein the fourth semiconductor die has an active surface generally flush with the back side of the third semiconductor structure, and a back surface embedded in the encapsulant;

forming conductive lines on the front and back sides of the third semiconductor structure;

forming a third conductive via that extends from the front side of the third semiconductor structure to the back side of the third semiconductor structure, the third conductive via being in direct contact with the conductive lines; and

stacking the third semiconductor structure with the first and second semiconductor structures.

15. The method of claim 14 further comprising placing a conductive structure between the third semiconductor structure and one of the first and second semiconductor structures.

16. The method of claim 14 wherein side surfaces of each of the third and fourth semiconductor dies are embedded in the encapsulant.

17. The method of claim 14 wherein the first, second and third conductive vias are axially aligned.

18. The method of claim 14 wherein forming a third semiconductor structure comprises:

placing an adhesive material between the third semiconductor die and the fourth semiconductor die.

19. The method of claim of claim 18 , wherein the back surfaces of the third and fourth semiconductor dies are spaced apart from the adhesive material.

20. The method of claim 9 , further comprising:

placing an additional semiconductor die in the first semiconductor structure.

21. The method of claim 9 , further comprising:

placing a conductive structure between and in direct contact with (1) the first conductive via of the first semiconductor structure and (2) the conductive lines on the front side of the second semiconductor structure.