Ag—Au—Pd ternary alloy bonding wire
An Ag—Au—Pd ternary alloy bonding wire for semiconductor devices made from 4-10 mass % of gold having a purity of 99.999% or higher, 2-5 mass % of palladium having a purity of 99.99% or higher, and remaining mass % of silver (Ag) having a purity of 99.999% or higher; and this wire contains 15-70 mass ppm of oxidizing non-noble metallic elements, and is thermally annealed before being continuously drawn through dies, and is thermally tempered after being continuously drawn through the dies, and this wire is useful for ball bonding in a nitrogen atmosphere; Ag 2 Al and a Pd rich layer produced in the interface between the Ag—Au—Pd ternary alloy wire and an aluminum pad suppress the corrosion development between the Ag 2 Al intermetallic compound layer and the wire.
1. An Ag—Au—Pd ternary alloy bonding wire for semiconductor devices comprising:
an alloy made from a mixture of Ag having an initial purity of 99.99% or higher; Au having an initial purity of 99.999% or higher; Pd having an initial purity of 99.99% or higher; and oxidizing non-noble metallic elements, including at least one of calcium, a rare earth element and lanthanum; the alloy comprising:
4-10 mass % of the Au;
2-5 mass % of the Pd;
15-70 mass ppm of the oxidizing non-noble metallic elements, including at least one of calcium, a rare earth element and lanthanum; and
the balance being the Ag;
wherein the wire is thermally annealed at least once, followed by continuous drawing through dies, followed by thermal tempering,
the wire is applicable for ball bonding in a nitrogen atmosphere and
the wire has a HAST reliability of 50% or smaller.
2. The Ag—Au—Pd ternary alloy bonding wire for semiconductor devices as claimed in claim 1 , wherein said alloy contains 6-9 mass % of said Au and 3-5 mass % of said Pd.
3. The Ag—Au—Pd ternary alloy bonding wire for semiconductor devices as claimed in claim 1 , wherein said wire is thermally annealed twice or more.
4. The Ag—Au—Pd ternary alloy bonding wire for semiconductor devices as claimed in claim 1 , wherein said thermal annealing is conducted at a temperature higher than a temperature at which said thermal tempering is conducted.
5. A method for manufacturing an Ag—Au—Pd ternary alloy bonding wire for semiconductor devices comprising steps of:
(a) preparing an alloy from a mixture of Au having an initial purity of 99.999% or higher; Pd having an initial purity of 99.99% or higher; oxidizing non-noble metallic elements including at least one of calcium, a rare earth element and lanthanum; and Ag having an initial purity of 99.99% or higher;
wherein the alloy comprises
4-10 mass % of the Au;
2-5 mass % of the Pd;
15-70 mass ppm of the oxidizing non-noble metallic elements including at least one of calcium, a rare earth element and lanthanum; and
the balance being the Ag;
(b) preparing a wire from the alloy;
(c) thermally annealing said wire at least once;
(d) continuously drawing said wire through dies; and
(e) thermally tempering said continuously drawn wire.
6. The method for manufacturing the Ag—Au—Pd ternary alloy bonding wire as claimed in claim 5 , wherein said thermal annealing is conducted at a temperature higher than a temperature at which said thermal tempering is conducted.
7. The Ag—Au—Pd ternary alloy bonding wire for semiconductor devices as claimed in claim 1 , wherein the wire has a difference in a sphericity of 100 free air balls (FABs) of 2 micrometers or less.
8. The Ag—Au—Pd ternary alloy bonding wire for semiconductor devices as claimed in claim 1 , wherein the wire has a 1 st ball shear that is 12 gf or larger.
9. The Ag—Au—Pd ternary alloy bonding wire for semiconductor devices as claimed in claim 1 , wherein the wire has a standard deviation of circularity stability of 0.8 micrometers or more to less than 1 micrometer after 100 times of bonding the wire to an IC chip.
10. The Ag—Au—Pd ternary alloy bonding wire for semiconductor devices as claimed in claim 1 , wherein the wire has a difference in a sphericity of 100 FABs of 2 micrometers or less, a 1 St ball shear that is 12 gf or larger, and a standard deviation of a circularity stability of 0.8 micrometers or more to less than 1 micrometer after 100 times of bonding the wire to an IC chip.
11. The Ag—Au—Pd ternary alloy bonding wire for semiconductor devices as claimed in claim 1 , wherein the temperature of the thermal annealing ranges from about 500° C. to less than about 1,000° C.