IP Library › Granted Patent US 9,105,323
Granted Patent B2
US 9,105,323 · App. 12/359,039 · Granted Aug 11, 2015

Memory device power managers and methods

Inventor: Joe M. Jeddeloh (Shoreview, MN)
Assignee: Micron Technology, Inc.
G11C5/147G06F1/3225G06F1/3275G11C5/02Y02B60/1228
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Quick Facts
Patent No.
US 9,105,323
App. No.
12/359,039
Granted
Aug 11, 2015
Kind
B2
Abstract

Memory devices and methods are described that include a stack of memory dies and an attached logic die. Method and devices described provide for power management of portions of a stack of memory dies. Additional devices, systems, and methods are disclosed.

Claims (32)

1. A memory device, comprising:

a stack of memory arrays;

a logic controller on a die stacked with the stack of memory arrays; and

an activity tracker located in the logic controller to monitor different levels of activity of at least one of a plurality of portions of the stack of memory arrays, wherein the logic controller is configured to adjust a power state of the at least one portion to correspond to the level of activity of the at least one portion, wherein a power state includes powering down only selected memory vault controllers and their associated memory vaults, wherein the portions include a plurality of vertical memory vaults, and wherein each vertical memory vault is associated with a respective vault controller located on the logic die, and each vault controller includes an activity tracker;

a plurality of serialized communication link interfaces to couple the plurality of vertical memory vaults to a host processor; and

a matrix switch enabling cross-connecting each of the plurality of serialized communication link interfaces to a selected vertical memory vault.

2. The memory device of claim 1 , wherein the stack of memory arrays is a portion of a stack of memory dies.

3. The memory device of claim 1 , wherein the logic controller is configured to change a power state of one or more serialized communication link interfaces.

4. A memory device, comprising:

a stack of memory dies;

a logic die stacked with the stack of memory dies;

an activity tracker located in the logic die to monitor levels of activity of at least one portion of the stack of memory dies, wherein the logic die is configured to adjust a power state of the at least one portion to correspond to the level of activity of the at least one portion, wherein the logic die is configured to change a power state of an individual vault controller, wherein the portions include a plurality of vertical memory vaults, and wherein each vertical memory vault is associated with a respective vault controller located on the logic die, and each vault controller includes an activity tracker;

a plurality of serialized communication link interfaces to couple the plurality of vertical memory vaults to a host processor; and

a matrix switch enabling cross-connecting each of the plurality of serialized communication link interfaces to a selected vertical memory vault.

5. The memory device of claim 4 , wherein the logic die is configured to change a power state of one or more serialized communication link interfaces coupled to the vault controllers.

6. A memory device, comprising:

a stack of memory dies;

a number of originating devices; and

a logic die stacked with the stack of memory dies to interface between the stack of memory dies and the number of originating devices, wherein the logic die is configured to change a power state of a portion of the stack of memory dies to correspond to a power state of one of the number of originating devices, wherein a power state includes powering down only selected memory vault controllers and their associated memory vaults, wherein the portion includes a plurality of vertical memory vaults, and wherein each vertical memory vault is associated with a respective vault controller located on the logic die, and each vault controller includes an activity tracker;

a plurality of serialized communication link interfaces to couple the plurality of vertical memory vaults to a host processor; and

a matrix switch enabling cross-connecting each of the plurality of serialized communication link interfaces to a selected vertical memory vault.

7. The memory device of claim 6 , wherein the number of originating devices comprise a number of processors.

8. The memory device of claim 7 , wherein the number of processors comprise a number of processor cores of a multi-core processing device.

9. The memory device of claim 6 , wherein the stack of memory dies includes a number of vertical memory vaults, and the logic die is configured to change a power state of one or more vertical memory vaults.

10. The memory device of claim 9 , wherein the logic die is configured to receive a packet command from one or more of the originating devices to change the power state.

11. A method of operating a memory device, comprising:

individually controlling a number of different memory portions of a stack of memory arrays respectively using a number of memory vault controllers located in a locally attached logic die;

monitoring an activity level of a memory portion of the number of different memory portions using an activity tracker located in a corresponding memory vault controller of the memory vault controllers, wherein each vertical memory vault is associated with one respective vault controller located on the logic die, and each vault controller includes an activity tracker, wherein a plurality of serialized communication link interfaces couple the plurality of vertical memory vaults to a host processor, and wherein a matrix switch enables cross-connecting each of the plurality of serialized communication link interfaces to a selected vertical memory vault; and

adjusting a power state of one or more portions to correspond to the level of activity of the one or more portions, wherein a power state includes powering down only selected memory vault controllers and their associated memory vaults.

12. The method of claim 11 , further including comparing the activity level of the at least one of the number of different memory portions to a threshold length of time.

13. The method of claim 11 , wherein individually controlling a number of different memory portions of a stack of memory arrays includes controlling a number of different vertical memory vaults.

14. The method of claim 11 , wherein adjusting a power state of one or more portions further comprises adjusting a power state of one or more portions corresponding to a power state of one or more associated processor cores.

Assignments (8)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 25, 2009
From: JEDDELOH, JOE M.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 022311/0578 →
Continuity (1)
Related Publication 20100191999A1 · Jul 29, 2010