Semiconductor device and method of manufacturing the same
A semiconductor device includes a first semiconductor package including a first mold part, a second semiconductor package including a second mold part, a connecting pattern configured to electrically connect the first and second semiconductor packages to each other, and a molding pattern between the first and second semiconductor packages. The molding pattern extends to cover at least a portion of a sidewall of only the second semiconductor package.
1. A semiconductor device comprising:
a first semiconductor package including,
a first substrate,
a first semiconductor chip mounted on the first substrate, and
a first mold part covering at least a portion of the first semiconductor chip;
a second semiconductor package on the first semiconductor package and spaced apart from the first semiconductor package, the second semiconductor package including,
a second substrate,
a second semiconductor chip mounted on the second substrate, and
a second mold part covering at least a portion of the second semiconductor chip;
a connecting pattern configured to electrically connect the first and second semiconductor packages to each other; and
a molding pattern covering a space between the first and second semiconductor packages, the molding pattern extending in a vertical direction to cover at least a portion of a sidewall of only the second semiconductor package.
2. The semiconductor device of claim 1 , wherein an outer sidewall of the molding pattern is substantially coplanar with the sidewall of the first semiconductor package.
3. The semiconductor device of claim 1 , wherein:
a width of the first semiconductor package is greater than a width of the second semiconductor package, and
the molding pattern extends from the first mold part to cover at least a portion of the second substrate.
4. The semiconductor device of claim 1 , wherein the molding pattern includes an underfill material.
5. The semiconductor device of claim 1 , wherein:
the first mold part has an exposure mold underfill (e-MUF) structure exposing a top surface of the first semiconductor chip, and
the molding pattern covers the top surface of the first semiconductor chip.
6. The semiconductor device of claim 1 , wherein the first mold part covers a top surface of the first semiconductor chip.
7. The semiconductor device of claim 1 , wherein one of the first semiconductor chip and the second semiconductor chip includes a through-silicon-via (TSV) penetrating the one of the first semiconductor chip and the second semiconductor chip.
8. The semiconductor device of claim 1 , wherein:
the connecting pattern is in a hole in the first mold part, and
the molding pattern extends to fill the hole including the connecting pattern disposed therein.
9. The semiconductor device of claim 1 , wherein
the molding pattern covers a top surface of the first mold part and a top surface of the first semiconductor chip, and
the connecting pattern extends through the first mold part and the molding pattern to electrically connect the first and second semiconductor packages to each other.
10. A semiconductor device comprising:
at least two stacked semiconductor packages spaced apart from each other, one of the at least two stacked semiconductor packages including a protruding portion extending further in a horizontal direction than the other of the least two stacked semiconductor packages;
a connecting pattern configured to electrically connect the at least two stacked semiconductor packages; and
a molding pattern covering a space between the at least two stacked semiconductor packages, the molding pattern extending to cover a top surface of the protruding portion of the one of the at least two stacked semiconductor packages and at least a portion of a sidewall of the other of the at least two stacked semiconductor packages.
11. The semiconductor device of claim 10 , wherein
the molding pattern covers a top surface of the first mold part and a top surface of the first semiconductor chip,
the one of the at least two stacked semiconductor packages is the first semiconductor package,
the other of the at least two stacked semiconductor packages is the second semiconductor package, and
the connecting pattern extends through the first mold part and the molding pattern to electrically connect the first and second semiconductor packages to each other.
12. A semiconductor device comprising:
at least two stacked semiconductor packages spaced apart from each other,
the at least two stacked semiconductor packages including a first semiconductor package and a second semiconductor package,
the second semiconductor package being on the first semiconductor package,
the first semiconductor package including a first mold part covering at least a portion of the first semiconductor chip,
the second semiconductor package including a second mold part covering at least a portion of a second semiconductor chip,
one of the at least two stacked semiconductor packages including a protruding portion extending further in a horizontal direction than the other of the least two stacked semiconductor packages;
a connecting pattern configured to electrically connect the at least two stacked semiconductor packages; and
a molding pattern covering a space between the at least two stacked semiconductor packages, the molding pattern extending to cover a top surface of the protruding portion of the one of the at least two stacked semiconductor packages and at least a portion of a sidewall of the other of the at least two stacked semiconductor packages.
13. The semiconductor device of claim 12 , wherein
the first semiconductor package includes a first substrate,
the first semiconductor chip is mounted on the first substrate,
the second semiconductor package includes a second substrate, and
the second semiconductor chip is mounted on the second substrate.
14. The semiconductor device of claim 13 , wherein:
a width of the first semiconductor package is greater than a width of the second semiconductor package, and
the molding pattern extends from the first mold part to cover at least a portion of the second substrate.
15. The semiconductor device of claim 13 , wherein:
the first mold part has an exposure mold underfill (e-MUF) structure exposing a top surface of the first semiconductor chip, and
the molding pattern covers the top surface of the first semiconductor chip.
16. The semiconductor device of claim 13 , wherein the first mold part covers a top surface of the first semiconductor chip.
17. The semiconductor device of claim 13 , wherein one of the first semiconductor chip and the second semiconductor chip includes a through-silicon-via (TSV) penetrating the one of the first semiconductor chip and the second semiconductor chip.
18. The semiconductor device of claim 13 , wherein:
the connecting pattern is in a hole in the first mold part, and
the molding pattern extends to fill the hole including the connecting pattern disposed therein.
19. The semiconductor device of claim 12 wherein an outer sidewall of the molding pattern is substantially coplanar with the sidewall of the one of the at least two stacked semiconductor packages.
20. The semiconductor device of claim 12 wherein the molding pattern includes an underfill material.