Diode having high brightness and method thereof
A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.
1. A light emitting device, comprising:
a light emitting structure comprising:
a first-type semiconductor layer;
a second-type semiconductor layer; and
an active layer between the first-type semiconductor layer and the second-type semiconductor layer,
wherein the active layer is a multiple quantum well layer;
a first electrode electrically connected to the first-type semiconductor layer, the first electrode including a material selected from the group consisting of titanium, aluminum, and gold;
a second electrode electrically connected to the second-type semiconductor layer, the second electrode including platinum; and
a substrate comprising:
a flat top surface proximate to the light emitting structure;
a flat bottom surface facing the flat top surface; and
a body between the flat top surface and the flat bottom surface,
wherein the body comprises:
a first portion proximate to the flat top surface; and
a second portion,
wherein a side surface of the first portion of the body is perpendicular to the flat top surface of the substrate,
wherein a side surface of the second portion of the body is inclined with reference to the flat bottom surface of the substrate, and
wherein an inclination angle between the side surface of the second portion of the body and the flat bottom surface is an obtuse angle.
2. The light emitting device according to claim 1 , wherein the substrate has a thickness of 350 μm or less.
3. The light emitting device according to claim 2 , wherein the second electrode has a thickness of 500 nm or greater.
4. The light emitting device according to claim 3 , wherein the flat bottom surface of the substrate has a roughness of up to 5 nm.
5. The light emitting device according to claim 3 , further comprising a transparent conductive layer between the second electrode and the light emitting structure.
6. The light emitting device according to claim 5 , wherein the transparent conductive layer includes indium-tin-oxide.
7. The light emitting device according to claim 3 , wherein the substrate includes sapphire or silicon carbide.
8. The light emitting device according to claim 3 , wherein an area of the flat top surface of the substrate is larger than an area of the flat bottom surface of the substrate.
9. The light emitting device according to claim 3 , wherein the light emitting structure further comprises a buffer layer on the substrate.
10. The light emitting device according to claim 9 , wherein an area of the buffer layer is larger than an area of the flat bottom surface of the substrate.
11. The light emitting device according to claim 3 , wherein the side surface of the second portion comprises a first side surface and a second side surface facing each other, the inclination angles of the first side surface and second side surface with reference to the flat bottom surface of the substrate are equal to each other.
12. The light emitting device according to claim 3 , wherein the light emitting structure contacts all of the flat top surface of the substrate.
13. The light emitting device according to claim 1 , wherein the active layer includes AlInGaN.
14. The light emitting device according to claim 1 , wherein at least one of the first electrode and the second electrode includes gold.
15. The light emitting device according to claim 3 , wherein a top surface of the first electrode is higher than a bottom surface of the active layer.
16. The light emitting device according to claim 3 , wherein a first contact surface at which the first electrode contacts the first-type semiconductor layer is lower than a second contact surface at which the second electrode contacts the second-type semiconductor layer.
17. The light emitting device according to claim 3 , wherein a first contact surface at which the first electrode contacts the first-type semiconductor layer is lower than a top surface of the active layer.
18. The light emitting device according to claim 3 , wherein a first contact surface at which the first electrode contacts the first-type semiconductor layer is lower than a bottom surface of the active layer.
19. The light emitting device according to claim 3 , wherein the first-type semiconductor layer has a doping concentration of 10 17 cm −3 or more.
20. The light emitting device according to claim 3 , wherein the second-type semiconductor layer has a doping concentration of 10 17 cm −3 or more.