Reduced capacitance interlayer structures and fabrication methods
Interlayer fabrication methods and interlayer structure are provided having reduced dielectric constants. The methods include, for example: providing a first uncured insulating layer with an evaporable material; and disposing a second uncured insulating layer having porogens above the first uncured insulating layer. The interlayer structure includes both the first and second insulating layers, and the methods further include curing the interlayer structure, leaving air gaps in the first insulating layer, and pores in the second insulating layer, where the air gaps are larger than the pores, and where the air gaps and pores reduce the dielectric constant of the interlayer structure.
1. A method comprising:
fabricating an interlayer structure with a reduced dielectric constant, the fabricating comprising:
providing a first uncured layer, the first uncured layer being a first insulating layer, and comprising porogens;
providing a second uncured layer above the first uncured layer, the second uncured layer being a second insulating layer, and comprising an evaporable material;
disposing a third uncured layer above the second uncured layer, the third uncured layer being a third insulating layer, and comprising porogens, wherein the interlayer structure comprises the first insulating layer, the second insulating layer, and the third insulating layer; and
curing the interlayer structure, the curing evaporating at least a portion of the evaporable material of the second insulating layer leaving air gaps therein, and degrading at least a portion of the porogens of the first insulating layer leaving pores therein and at least a portion of the porogens of the third insulating layer leaving pores therein, wherein the air gaps are larger than the pores, and the curing reduces the dielectric constant of the interlayer structure.
2. The method of claim 1 , further comprising, prior to curing the interlayer structure:
forming at least one opening in the interlayer structure, the at least one opening extending through the third uncured layer and at least partially into the second uncured layer; and
providing a conductive material within the at least one opening to form a conductive structure, wherein providing the conductive material prior to curing the interlayer structure, and leaving the air gaps and the pores therein, inhibits migration of the conductive material into the second insulating layer or the third insulating layer.
3. The method of claim 2 , wherein, after curing the interlayer structure, the third insulating layer comprising the pores facilitates maintaining structural stability of the conductive structure within the interlayer structure, notwithstanding the presence of the larger air gaps within the second insulating layer.
4. The method of claim 2 , wherein the fabricating further comprises, prior to the curing, providing a substrate structure below the interlayer structure, wherein the substrate structure comprises a metal layer disposed above a substrate of the substrate structure, and wherein the conductive structure extends to the metal layer.
5. The method of claim 4 , further comprising, after curing the interlayer structure, disposing another metal layer over the interlayer structure, wherein the conductive structure facilitates electrical connection between the metal layer and the another metal layer.
6. The method of claim 5 , wherein the substrate structure further comprises a device layer, wherein the device layer is disposed below the metal layer, and wherein the conductive structure facilitates electrical connection between the device layer and the another metal layer.
7. The method of claim 1 , further comprising, prior to curing the interlayer structure:
forming at least one opening in the interlayer structure, the at least one opening extending through the third uncured layer, and the second uncured layer, and at least partially into the first uncured layer; and
providing a conductive material within the at least one opening to form a conductive structure, wherein providing the conductive material prior to curing the interlayer structure, and leaving the air gaps and the pores therein, inhibits migration of the conductive material into the first insulating layer, the second insulating layer, or the third insulating layer.
8. The method of claim 7 , wherein, after curing the interlayer structure, the third insulating layer comprising the pores and the first insulating layer comprising the pores facilitate maintaining structural stability of the conductive structure within the interlayer structure, notwithstanding the presences of the larger air gaps within the second insulating layer.
9. The method of claim 1 , wherein, after curing the interlayer structure, the interlayer structure has an effective dielectric constant between 1.8 and 2.0.
10. The method of claim 1 , wherein the first uncured layer comprises a first C x H y material, and the second uncured layer comprises a second C x H y material.
11. The method of claim 1 , wherein the porogens comprise one of a terpinene or a cyclodextrin, and the evaporable material comprises a C x H y material.
12. The method of claim 1 , wherein the first insulating layer has a thickness of between 30 and 60 nanometers, and the second insulating layer has a thickness of between 30 and 60 nanometers.