Light sensor
Provided is a light sensor including a substrate, a dielectric layer, a plurality of pixels, a plurality of spacers, and a plurality of metal interconnects. The dielectric layer is located on the substrate. The pixels are located in the dielectric layer. The spacers are located on the sidewall of openings between adjacent pixels. The metal interconnects are located in the openings and cover the spacers so as to be electrically connected to the corresponding pixels.
1. A light sensor, comprising:
a substrate;
a dielectric layer located on the substrate;
a plurality of pixels located in the dielectric layer, wherein an opening is located between any two adjacent pixels;
a plurality of spacers, each of the spacers being located on a sidewall of the opening between the corresponding pixels; wherein the spacers are conformal to the vertical side surfaces and bottom surface of the opening and
a plurality of first metal interconnects, each of the first metal interconnects being completely filling the corresponding opening and covering the corresponding spacers so as to be electrically connected to the corresponding pixel.
2. The light sensor of claim 1 , wherein each of the plurality of pixels comprises:
a lower electrode;
a hydrogenated amorphous silicon layer covering the lower electrode; and
a transparent upper electrode covering the hydrogenated amorphous silicon layer.
3. The light sensor of claim 2 , wherein the first metal interconnects are respectively electrically connected to the transparent upper electrodes of the corresponding pixels.
4. The light sensor of claim 2 , wherein the hydrogenated amorphous silicon layers of the pixels respectively cover surfaces of the lower electrodes and are respectively extended to cover sidewalls of the lower electrodes.
5. The light sensor of claim 2 , further comprising a plurality of cap layers respectively covering the transparent upper electrodes of the pixels.
6. The light sensor of claim 5 , wherein each of the first metal interconnects comprises:
a metal layer located between the spacers in the corresponding opening and extending to a portion of the corresponding cap layer of the corresponding pixel; and
a via passing through the corresponding cap layer and electrically connected to the corresponding metal layer and the corresponding transparent upper electrode.
7. The light sensor of claim 6 , wherein each of the spacers is further extended to cover a bottom of the corresponding opening and is located below the metal layer of the corresponding first metal interconnect.
8. The light sensor of claim 1 , further comprising a color filter located on the dielectric layer.
9. The light sensor of claim 1 , further comprising a plurality of second metal interconnects respectively electrically connected to a lower electrodes of the pixels and source regions of transistors on the substrate.
10. The light sensor of claim 1 , wherein each of the pixels comprise a blue pixel, a green pixel, or a red pixel.
11. A multi-wave band light sensor, comprising:
a substrate;
a dielectric layer located on the substrate;
a plurality of first wave band light sensors located on the dielectric layer, wherein a first opening is located between any two adjacent first wave band light sensors;
a plurality of first spacers respectively located on sidewalls of the first openings; wherein the first spacers are conformal to the vertical side surfaces and bottom surface of the first openings
a plurality of first metal interconnects respectively filling the first openings and respectively electrically connected to the first wave band light sensors;
a plurality of second wave band light sensors located in the dielectric layer, wherein a second opening is located between any two adjacent second wave band light sensors, and each of the first wave band light sensors and each of the second wave band light sensors comprise:
a lower electrode;
a hydrogenated amorphous silicon layer covering the corresponding lower electrode; and
a transparent upper electrode covering the corresponding hydrogenated amorphous silicon layer;
a plurality of second spacers respectively located on sidewalls of the second openings;
a plurality of second metal interconnects respectively filling the second openings and respectively electrically connected to the second wave band light sensors;
a plurality of third wave band light sensors located in the substrate, wherein at least a portion of each of the second wave band light sensors is located between the corresponding third wave band light sensors and the corresponding first wave band light sensors and is overlapped with the corresponding third wave band light sensors and the corresponding first wave band light sensors, and wherein a portion of each of the first wave band light sensor not overlapped with the corresponding second wave band light sensors is electrically connected to a first metal layer, and another portion of each of the second wave band light sensor not overlapped with the corresponding third wave band light sensors is electrically connected to a second metal layer; and
a protective layer located on the first wave band light sensors.
12. The multi-wave band light sensor of claim 11 , wherein each of the first metal interconnects is electrically connected to the corresponding transparent upper electrode of the corresponding first wave band light sensors and each of the second metal interconnects is electrically connected to the corresponding transparent upper electrode of the corresponding second wave band light sensors.
13. The multi-wave band light sensor of claim 11 , wherein each of the hydrogenated amorphous silicon layers of the first wave band light sensors and the second wave band light sensors covers a surface of the corresponding lower electrode and is extended to cover a sidewall of the corresponding lower electrode.
14. The multi-wave band light sensor of claim 11 , further comprising a plurality of cap layers respectively covering the transparent upper electrodes of the first wave band light sensors and the second wave band light sensors.
15. The multi-wave band light sensor of claim 14 , wherein each of the first metal interconnects comprises:
a metal layer located between the corresponding first spacers in the corresponding first opening and extending to a portion of the corresponding cap layer on the corresponding first wave band light sensor; and
a via passing through the corresponding cap layer and electrically connecting the corresponding metal layer and the corresponding transparent upper electrode.
16. The multi-wave band light sensor of claim 14 , wherein each of the second metal interconnects respectively comprises:
a metal layer located between the corresponding second spacers in the corresponding second opening and extending to a portion of the corresponding cap layer on the corresponding second wave band light sensor; and
a via passing through the corresponding cap layer and electrically connecting the corresponding metal layer and the corresponding transparent upper electrode.
17. The multi-wave band light sensor of claim 11 , further comprising:
the lower electrode in the portion of each of the first wave band light sensor not overlapped with the corresponding second wave band light sensors is electrically connected the first metal layer through a first via; and
the lower electrode in the portion of each of the second wave band light sensor not overlapped with the corresponding third wave band light sensors is electrically connected to the second metal layer through a second via.
18. The multi-wave band light sensor of claim 11 , wherein each of the first wave band light sensors is a blue light sensor, each of the second wave band light sensors is a green light sensor, and each of the third wave band light sensors is a red light sensor.
19. The multi-wave band light sensor of claim 11 , further comprising an infrared filter located on the protective layer and covering the first wave band light sensors.
20. The multi-wave band light sensor of claim 11 , wherein each of the third wave band light sensors is a junction diode and comprises a well region formed in the substrate, wherein the substrate and the well region have different conductivity types.