System and method for die to die stress improvement
A semiconductor wafer having a plurality of chip die areas arranged on a wafer in an array, each chip die area including a seal ring area with one or more first sets of polygonal structures. The wafer further comprises scribe line areas between the chip die areas, the scribe line areas including one or more second sets of polygonal structures. The presence of proximate polygonal structures between the scribe line and seal ring areas balance stresses between the chip die areas during wafer dicing operation.
1. A semiconductor wafer comprising a semiconductor material:
the wafer having a plurality of die areas arranged in an array, the wafer having an inter-layer dielectric (ILD) material adjacent the die areas and a metal line layer adjacent the ILD material, the metal line layer being on a front side of the wafer;
the wafer having scribe line areas comprising spaces between the die areas, at a back side of the wafer opposite the front side; and
the wafer having a first set of polygonal structures in one or more of the scribe line areas, each polygonal structure in the first set of polygonal structures comprising a portion of the semiconductor material and a dielectric layer adjacent the portion of the semiconductor material, wherein the semiconductor material occupies an entire area of each polygonal structure in the first set of polygonal structures, and each polygonal structure in the first set of polygonal structures, and each polygonal structure is adjacent to and laterally surrounded by a space of one of the scribe line areas.
2. The semiconductor wafer of claim 1 wherein the first set of polygonal structures is positioned in a region between corners of adjacent die areas.
3. The semiconductor wafer of claim 1 wherein the first set of polygonal structures extend the full length of one or more scribe line areas.
4. The semiconductor wafer of claim 1 wherein the polygonal structures in the first set of polygonal structures are selected from the group consisting of squares, rectangles, hexagons, pentagons, circles, and combinations thereof.
5. The semiconductor wafer of claim 1 wherein each of the die areas include a seal ring area, and
wherein the seal ring areas comprise a second set of polygonal structures, whereby the first and second sets of polygonal structures balance stresses between the die areas during a wafer dicing operation.
6. The semiconductor wafer of claim 5 wherein a geometry of each of the polygonal structures in the to first and second sets of polygonal structures are substantially the same.
7. A semiconductor wafer comprising a semiconductor material: the wafer having a plurality of die areas arranged in an array, the wafer having a metal line layer on a front side of the wafer, the metal line layer being adjacent an inter-layer dielectric (ILD) material; a portion of the ILD layer being in the die area; and
a seal ring area with one or more first sets of polygonal structures; and the wafer having scribe line areas between the die areas, on a back side of the wafer opposite the front side, the scribe line areas including one or more second sets of polygonal structures, each polygonal structure in the one or more second sets of polygonal structures comprising a portion of the semiconductor material and a dielectric layer adjacent the portion of the semiconductor material, wherein the semiconductor material occupies an entire area of each polygonal structure in the one or more second sets of polygonal structures, and each polygonal structure in the one or more second sets of polygonal structures is adjacent to and laterally surrounded by a space of one of the scribe line areas.
8. The semiconductor wafer of claim 7 wherein the one or more first sets of polygonal structures are positioned in corner regions of respective die areas.
9. The semiconductor wafer of claim 7 wherein the one or more second sets of polygonal structures are positioned in a region between corners of adjacent die areas.
10. The semiconductor wafer of claim 7 wherein the one or more second sets of polygonal structures extend the full length of respective scribe line areas.
11. The semiconductor wafer of claim 7 wherein the polygonal structures in the one or more of first and second sets of polygonal structures are selected from the group consisting of squares, rectangles, hexagons, pentagons, circles, and combinations thereof.
12. The semiconductor wafer of claim 7 wherein polygonal structures in the one or more first sets of polygonal structures which are proximate to polygonal structures in the one or more second sets of polygonal structures have substantially the same geometry.
13. A semiconductor wafer comprising a semiconductor material:
the wafer having a plurality of die areas, having an inter-layer dielectric (ILD) material adjacent the die areas and a metal line layer adjacent the ILD material, the metal line layer being on a front side of the wafer, each die area including a seal ring area with one or more first patterns of dummy structures; and
the wafer having a plurality of scribe line areas comprising spaces on a back side of the wafer opposite the front side, between the die areas, the scribe line areas including one or more second patterns of dummy structures, each dummy structure in the one or more second patterns of dummy structures comprising a portion of the semiconductor material and a dielectric layer adjacent the portion of the semiconductor material, wherein the semiconductor material occupies an entire area of each dummy structure in the one or more second patterns of dummy structures, and each dummy structure in the one or more second patterns of dummy structures is adjacent to and laterally surrounded by a space of one of the scribe line areas.
14. The semiconductor wafer of claim 13 wherein the one or more first patterns of dummy structures are positioned in corner regions of respective seal ring areas and the one or more second patterns of dummy structures are positioned in a region between corners of adjacent die areas.
15. The semiconductor wafer of claim 1 , wherein a surface of the portion of semiconductor material in each polygonal structure in the first set of polygonal structures is coplanar with the back side of the semiconductor material of the wafer.
16. The semiconductor wafer of claim 7 , wherein a surface of the portion of semiconductor material in each polygonal structure in the one or more second sets of polygonal structures is coplanar with the back side of the semiconductor material of the wafer.
17. The semiconductor wafer of claim 13 , wherein a surface of the portion semiconductor material in each dummy structure in the one or more second patterns of dummy structures is coplanar with the back side of the semiconductor material of the wafer.