Reactor for producing polycrystalline silicon, system for producing polycrystalline silicon, and process for producing polycrystalline silicon
An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11 a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11 b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11 a comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]−1.5 [Si], is not less than 40% wherein [Cr] is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si).
1. A process for producing polycrystalline silicon comprising:
feeding a silicon raw material gas into a reactor, and
performing a deposition reaction of polycrystalline silicon in a state where a temperature of an inner surface of an inner wall of the reactor is controlled at a temperature of not less than 100° C. and not more than 370° C., wherein the inner surface comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]−1.5 [Si], is not less than 40%, wherein [Cr] is a mass content of chromium in mass %, [Ni] is a mass content of nickel in mass %, and [Si] is a mass content of silicon in mass %.
2. The process of claim 1 , wherein the value R is not less than 60%, and the temperature of the inner surface of the inner wall of the reactor is controlled at a temperature less than 300° C.
3. A reactor comprising:
an anticorrosive layer provided on an inner surface of an inner wall, the anticorrosive layer comprising a first alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]−1.5 [Si], is not less than 40% wherein [Cr] is a mass content of chromium in mass %, [Ni] is a mass content of nickel in mass %, and [Si] is a mass content of silicon in mass %;
a cooling water flow passage that allows pressurized cooling water having a temperature not less than a standard boiling point to be circulated therethrough; and
a heat conductive layer provided between the anticorrosive layer and the cooling water flow passage, the heat conductive layer comprising a second alloy material having a heat conductivity higher than that of the first alloy material.
4. The reactor of claim 3 , wherein the value R is not less than 60%.
5. The reactor of claim 4 , wherein [Cr] is in a range of 14.6 to 25.2% by mass, [Ni] is in a range of 19.6 to 77.5% by mass, and [Si] is in a range of 0.3 to 0.6% by mass.
6. The reactor of claim 4 , wherein the second alloy material is a single steel material.
7. The reactor of claim 4 , wherein the second alloy material is a clad steel material having several kinds of metals attached to each other.
8. The reactor of claim 3 , wherein [Cr] is in a range of 14.6 to 25.2% by mass, [Ni] is in a range of 19.6 to 77.5% by mass, and [Si] is in a range of 0.3 to 0.6% by mass.
9. The reactor of claim 8 , wherein the second alloy material is a single steel material.
10. The reactor of claim 8 , wherein the second alloy material is a clad steel material having several kinds of metals attached to each other.
11. The reactor of claim 3 , wherein the second alloy material is a single steel material or a clad steel material having several kinds of metals attached to each other.
12. The reactor of claim 3 , wherein [Cr] is in a range of 24 to 26% by mass, [Ni] is in a range of 19 to 22% by mass, and [Si] is in a range of 0.3 to 1.5% by mass.
13. The reactor of claim 3 , wherein [Cr] is in a range of 19 to 22% by mass, [Ni] is in a range of 28 to 30% by mass, and [Si] is in a range of 0.3 to 1.0% by mass.
14. The reactor of claim 3 , wherein [Cr] is in a range of 18 to 23% by mass, [Ni] is in a range of 28 to 35% by mass, and [Si] is in a range of 0.3 to 0.5% by mass.
15. The reactor of claim 3 , wherein [Cr] is in a range of 14 to 17% by mass, [Ni] is greater than or equal to 50% by mass, and [Si] is in a range of 0.3 to 0.6% by mass.
16. The reactor of claim 3 , wherein [Cr] is in a range of 14 to 17% by mass, [Ni] is greater than or equal to 72% by mass, and [Si] is in a range of 0.3 to 0.5% by mass.
17. The reactor of claim 3 , wherein the second alloy material is a single steel material.
18. The reactor of claim 3 , wherein the second alloy material is a clad steel material having several kinds of metals attached to each other.
19. A system for producing polycrystalline silicon comprising:
the reactor of claim 3 ; and
a temperature control mechanism capable of controlling a temperature of the inner surface of the inner wall at a temperature of not more than 370° C. when the polycrystalline silicon is deposited within the reactor.
20. A system for producing polycrystalline silicon comprising:
the reactor of claim 4 ; and
a temperature control mechanism capable of controlling a temperature of the inner surface of the inner wall at a temperature of not more than 370° C. when the polycrystalline silicon is deposited within the reactor.