Semiconductor device structure
Embodiments for forming a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a gate stack structure formed on the substrate. The semiconductor device structure also includes gate spacers formed on sidewalls of the gate stack structure. The semiconductor device structure further includes an isolation structure formed in the substrate and a source/drain stressor structure formed adjacent to the isolation structure. The source/drain stressor structure includes a capping layer which is formed along the (311) and (111) crystal orientations.
1. A semiconductor device structure, comprising:
a substrate;
a gate stack structure formed on the substrate;
gate spacers formed on sidewalls of the gate stack structure;
an isolation structure formed in the substrate; and
a source/drain stressor structure formed adjacent to the isolation structure, wherein the source/drain stressor structure comprises a capping layer which is formed along the (311) and (111) crystal orientations,
wherein the source/drain stressor structure further comprises: a stressor layer formed between the substrate and the capping layer, and
wherein a portion of the stressor layer is grown along the (311) and (111) crystal orientations.
2. The semiconductor device structure as claimed in claim 1 , wherein the capping layer comprises SiGe, Si, SiC or SiGeSn.
3. The semiconductor device structure as claimed in claim 1 , wherein a portion of the capping layer is below a top surface of the substrate.
4. The semiconductor device structure as claimed in claim 1 , wherein the capping layer has a thickness in a range from about 10 nm to about 30 nm.
5. The semiconductor device structure as claimed in claim 1 , wherein the semiconductor device structure is at an edge region of a wafer.
6. The semiconductor device structure as claimed in claim 1 , further comprising:
a metal silicide layer formed on the source/drain stressor structure.
7. The semiconductor device structure as claimed in claim 6 , further comprising:
a contact structure formed on the metal silicide layer, wherein the source/drain stressor structure is connected to the contact structure by the metal silicide layer.
8. The semiconductor device structure as claimed in claim 1 , further comprising:
gate spacers formed on sidewalls of the gate stack structure; and
doped regions formed in the substrate.
9. The semiconductor device structure as claimed in claim 8 , wherein the doped regions are aligned with an inner side of the gate spacers.
10. The semiconductor device structure as claimed in claim 8 , wherein the capping layer is slanted downward from the doped regions to the isolation structure.
11. The semiconductor device structure as claimed in claim 1 , wherein the capping layer has a close-packaged structure.
12. A semiconductor device structure, comprising:
a substrate;
a gate stack structure formed on the substrate;
gate spacers formed on sidewalls of the gate stack structure;
doped regions formed in the substrate;
an isolation structure formed in the substrate; and
a source/drain stressor structure formed between the doped regions and the isolation structure, wherein the source/drain stressor structure comprises:
a stressor layer formed in the substrate, wherein a portion of the stressor layer is grown along the (311) and (111) crystal orientations; and
a capping layer formed above the stressor layer, and wherein the capping layer is slanted downward from the doped regions to the isolation structure.
13. The semiconductor device structure as claimed in claim 12 , wherein the capping layer has a first facet grown along the (311) crystal orientation and a second facet grown along the (111) crystal orientation, and the first facet has a first thickness and the second facet has a second thickness, and the first thickness is substantially equal to the second thickness.
14. The semiconductor device structure as claimed in claim 12 , wherein a portion of the capping layer is below a top surface of the substrate.
15. The semiconductor device structure as claimed in claim 12 , wherein the boundaries between the stressor layer and the capping layer are grown along the (311) and (111) crystal orientations.
16. The semiconductor device structure as claimed in claim 12 , wherein the capping layer has a close-packaged structure.
17. The semiconductor device structure as claimed in claim 12 , wherein the semiconductor device structure is at an edge region of a wafer.
18. The semiconductor device structure as claimed in claim 10 , wherein the capping layer comprises SiGe, Si, SiC or SiGeSn.
19. A semiconductor device structure, comprising:
a substrate;
a gate stack structure formed on the substrate;
gate spacers formed on sidewalls of the gate stack structure;
an isolation structure formed in the substrate;
a source/drain stressor structure formed adjacent to the isolation structure, wherein the source/drain stressor structure comprises a capping layer which is formed along the (311) and (111) crystal orientations; and
a metal silicide layer formed on the source/drain stressor structure.
20. A semiconductor device structure, comprising:
a substrate;
a gate stack structure formed on the substrate;
gate spacers formed on sidewalls of the gate stack structure;
an isolation structure formed in the substrate; and
a source/drain stressor structure formed adjacent to the isolation structure, wherein the source/drain stressor structure comprises a capping layer which is formed along the (311) and (111) crystal orientations; and wherein the capping layer has a close-packaged structure.
21. A semiconductor device structure, comprising:
a substrate;
a gate stack structure formed on the substrate;
gate spacers formed on sidewalls of the gate stack structure;
doped regions formed in the substrate;
an isolation structure formed in the substrate; and
a source/drain stressor structure formed between the doped regions and the isolation structure, wherein the source/drain stressor structure comprises:
a stressor layer formed in the substrate; and
a capping layer formed above the stressor layer, and wherein the capping layer is slanted downward from the doped regions to the isolation structure, wherein the capping layer has a close-packaged structure.