IP Library Granted Patent US 9,212,949
Granted Patent B2
US 9,212,949 · App. 14/228,802 · Granted Dec 15, 2015

Technique for temperature measurement and calibration of semiconductor workpieces using infrared

Inventors: Jeffrey E. Krampert (Topsfield, MA); Roger B. Fish (Bedford, MA)
Assignee: Varian Semiconductor Equipment Associates, Inc.
G01J5/02G01K15/005G01J2005/0051H01J2237/2065H01J2237/31701
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Quick Facts
Patent No.
US 9,212,949
App. No.
14/228,802
Granted
Dec 15, 2015
Kind
B2
Abstract

An improved system and method of measuring the temperature of a workpiece in a processing chamber is disclosed. Because silicon has very low emissivity in the infrared band, a coating is disposed on at least a portion of the workpiece. This coating may be graphite or any other material that can be readily applied, and has a relatively constant emissivity over temperature in the infrared spectrum. In one embodiment, a coating of graphite is applied to a portion of the workpiece, allowing the temperature of the workpiece to be measured by observing the temperature of the coating. This technique can be used to calibrate a processing chamber, validate operating conditions within the processing chamber, or to develop a manufacturing process.

Claims (48)

1. A processing system, comprising:

a platen;

a calibration workpiece disposed on said platen;

an IR camera using a range of wavelengths in an infrared spectrum to determine a temperature of said calibration workpiece; and

a coating disposed on a portion of an upper surface of said calibration workpiece, said coating having a nearly constant emissivity over a range of temperatures at said range of wavelengths.

2. The processing system of claim 1 , wherein said range of temperatures is between 0° C. and 600° C.

3. The processing system of claim 1 , wherein said coating comprises carbon.

4. The processing system of claim 1 , wherein said coating is applied along a diameter of said upper surface.

5. The processing system of claim 1 , wherein said coating is applied on an entirety of said upper surface.

6. The processing system of claim 1 , wherein said range of wavelengths is between 1.0 μm and 14.0 μm.

7. A method for calibrating a workpiece process, comprising:

maintaining a heated platen in a process chamber at an elevated temperature greater than 100° C.;

introducing a calibration workpiece to said process chamber, said calibration workpiece comprises a coating on a portion of its upper surface, said coating having a nearly constant emissivity over a desired temperature range;

placing said calibration workpiece on said heated platen;

monitoring a temperature of said calibration workpiece over time by focusing an IR camera at said portion; and

recording a time for said calibration workpiece to reach a predetermined temperature.

8. The method of claim 7 , further comprising processing a workpiece after said recording, wherein said processing comprises:

placing said workpiece on said heated platen;

waiting a predetermined amount of time; and

processing said workpiece after said waiting, where said predetermined amount of time is determined based on said recorded time for said calibration workpiece to reach said predetermined temperature.

9. The method of claim 7 , wherein said desired temperature range is a 100° C. range centered about said elevated temperature.

10. The method of claim 7 , wherein said coating is applied to an entirety of said upper surface of said calibration workpiece, and further comprising determining a temperature uniformity of said calibration workpiece by focusing said IR camera at a plurality of points on said upper surface.

11. The method of claim 7 , wherein said portion comprises a diameter of said upper surface, and further comprising estimating a temperature uniformity of said calibration workpiece by focusing said IR camera at a plurality of points on said diameter.

12. A method of validating a workpiece manufacturing process, comprising:

introducing a first workpiece into a process chamber;

disposing said first workpiece on a heated platen in said process chamber, said heated platen at an elevated temperature greater than 100° C.;

processing said first workpiece while on said heated platen;

introducing a calibration workpiece into said process chamber in a same manner as said first workpiece was introduced, wherein said calibration workpiece comprises a coating on a portion of its upper surface, said coating having a nearly constant emissivity over a desired temperature range;

measuring a temperature of said calibration workpiece using an IR camera focused at said portion having said coating; and

verifying said temperature is within an acceptable range.

13. The method of claim 12 , further comprising:

introducing a second workpiece into said process chamber after verifying said temperature is within said acceptable range;

disposing said second workpiece on said heated platen in said process chamber; and

processing said second workpiece while on said heated platen.

14. The method of claim 12 , further comprising performing a corrective action if said temperature is not within said acceptable range.

15. The method of claim 12 , wherein said introducing comprises:

placing a workpiece in a load lock; and

removing said workpiece from said load lock using a robotic mechanism disposed within said process chamber.

16. The method of claim 12 , wherein said desired temperature range is a 100° C. range centered about said elevated temperature.

17. The method of claim 12 , wherein said coating is applied to an entirety of said upper surface of said calibration workpiece, and further comprising determining a temperature uniformity of said calibration workpiece by focusing said IR camera at a plurality of points on said upper surface.

18. The method of claim 12 , wherein said portion comprises a diameter of said upper surface, and further comprising estimating a temperature uniformity of said calibration workpiece by focusing said IR camera at a plurality of points on said diameter.

19. A method of processing a workpiece at an elevated temperature, comprising:

applying a coating to a first portion of an upper surface of said workpiece, said coating having a nearly constant emissivity about a desired temperature range;

placing said workpiece on a heated platen;

focusing an IR camera at said first portion so as to monitor a temperature of said workpiece;

processing a second portion of said workpiece, said second portion different from said first portion; and

adjusting a temperature of said heated platen based on said monitored temperature of said workpiece while said workpiece is being processed so as to maintain said workpiece at said elevated temperature, wherein said elevated temperature is greater than 100° C.

20. The method of claim 19 , wherein said desired temperature range is a 100° C. range centered about said elevated temperature.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 9, 2014
From: KRAMPERT, JEFFREY E.; FISH, ROGER B.
To: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
Reel/Frame 032635/0217 →
Continuity (1)
Related Publication 20150276487A1 · Oct 1, 2015