IP Library Granted Patent US 9,214,450
Granted Patent B2
US 9,214,450 · App. 14/157,745 · Granted Dec 15, 2015

Package-on-package with via on pad connections

Inventor: Jiun Yi Wu (Zhongli, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H01L25/0657H01L21/6835H01L23/13H01L23/49811H01L23/49816H01L23/49822H01L23/49827H01L24/19H01L25/105H01L21/568H01L23/48H01L23/481H01L23/498H01L24/32H01L24/48H01L24/73H01L25/50H01L2221/68345H01L2221/68372H01L2221/68381H01L2224/12105H01L2224/32145H01L2224/32225H01L2224/48091H01L2224/48227H01L2224/73265H01L2225/0651H01L2225/1035H01L2225/1058H01L2924/15311
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Quick Facts
Patent No.
US 9,214,450
App. No.
14/157,745
Granted
Dec 15, 2015
Kind
B2
Abstract

An interposer includes a core dielectric material, a conductive pipe penetrating through the core dielectric material, and a metal pad underlying the conductive pipe. The metal pad includes a center portion overlapped by a region encircled by the conductive pipe, and an outer portion in contact with the conductive pipe. A dielectric layer is underlying the core dielectric material and the metal pad. A via is in the dielectric layer, wherein the via is in physical contact with the center portion of the metal pad.

Claims (57)

1. A package comprising:

an interposer comprising:

a core dielectric material;

a through-opening extending from a top surface to a bottom surface of the core dielectric material;

a conductive pipe penetrating through the core dielectric material;

a first device die in the through-opening, wherein the first device die comprises electrical connectors;

a molding material in the through-opening over the first device die and between the core dielectric material and the first device die;

a top package; and

a solder bonding the top package to the conductive pipe, wherein the solder extends into the conductive pipe.

2. The package of claim 1 further comprising:

a metal pad underlying the conductive pipe, wherein the metal pad comprises:

a center portion overlapped by a solder in the conductive pipe; and

an outer portion in contact with a perimeter of the conductive pipe;

a dielectric layer underlying the core dielectric material and the metal pad; and

a via in the dielectric layer, wherein the via is in physical contact with the center portion of the metal pad.

3. The package of claim 1 further comprising:

a metal line underlying and connected to the via; and

a solder ball underlying and electrically coupled to the metal line.

4. The package of claim 1 , wherein the molding material comprises a portion overlapping the first device die, and wherein a top surface of the molding material is level with a top surface of the interposer.

5. The package of claim 1 , wherein a bottom surface of the molding material is level with bottom ends of the electrical connectors of the first device die.

6. The package of claim 1 , wherein the top package comprises:

a package substrate; and

a second device die bonded to the package substrate.

7. The package of claim 6 , wherein the solder is in contact with a metal pad in the package substrate.

8. The package of claim 1 , wherein the electrical connectors of the device die face away from the top package.

9. A package comprising:

an interposer comprising:

a core dielectric material;

a conductive pipe penetrating through the core dielectric material;

a metal pad underlying the conductive pipe;

a dielectric layer underlying the core dielectric material and the metal pad;

a top package; and

a solder region bonding the top package to the conductive pipe, wherein the solder region extends into the conductive pipe.

10. The package of claim 9 , wherein the metal pad comprises:

a center portion overlapped by a region encircled by the conductive pipe; and

an outer portion in contact with the conductive pipe.

11. The package of claim 10 , wherein the outer portion of the metal pad extends beyond a perimeter of the conductive pipe.

12. The package of claim 10 further comprising a via in the dielectric layer, wherein the via is in physical contact with the center portion of the metal pad.

13. The package of claim 12 further comprising:

a metal line underlying and connected to the via; and

an electrical connector underlying and electrically coupled to the metal line.

14. The package of claim 9 , wherein the conductive pipe comprises a metal selected from the group consisting essentially of copper, aluminum, tungsten, nickel, and combinations thereof.

15. The package of claim 9 further comprising a device die, wherein the interposer further comprises:

a through-opening, with the device die in the through-opening; and

a plurality of conductive pipes penetrating through the core dielectric material, wherein the plurality of conductive pipes is disposed in a region encircling the through-opening.

16. The package of claim 9 , wherein the conductive pipe is empty inside.

17. A package comprising:

an interposer comprising:

a through-opening extending from a top surface to a bottom surface of the interposer;

a conductive pipe penetrating through the interposer;

a metal pad underlying and in contact with the conductive pipe;

a device die in the through-opening, wherein a bottom surface of the device die is substantially level with a bottom surface of the metal pad;

a top package; and

a solder region bonding the top package to the conductive pipe.

18. The package of claim 17 further comprising a molding material in the through-opening and in contact with over device die.

19. The package of claim 17 , wherein the solder region extends into the conductive pipe.

20. The package of claim 19 , wherein the solder region contacts a top surface of the metal pad.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 17, 2014
From: WU, JIUN YI
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 031993/0097 →
Continuity (2)
Provisional Application 61778226 · Mar 12, 2013
Related Publication 20140264857A1 · Sep 18, 2014