Structures and formation methods of finFET device
A semiconductor device includes a semiconductor substrate and an isolation structure over the semiconductor substrate. The semiconductor device also includes a first epitaxial fin and a second epitaxial fin over the semiconductor substrate, and the first epitaxial fin and the second epitaxial fin protrude from the isolation structure. The semiconductor device further includes a gate stack over and traversing the first epitaxial fin and the second epitaxial fin. In addition, the semiconductor device includes a recess extending from a top surface of the isolation structure. The recess is between the first epitaxial fin and the second epitaxial fin.
1. A semiconductor device, comprising:
a semiconductor substrate;
an isolation structure over the semiconductor substrate;
a first epitaxial fin and a second epitaxial fin over the semiconductor substrate, wherein the first epitaxial fin and the second epitaxial fin protrude from the isolation structure;
a gate stack over and traversing the first epitaxial fin and the second epitaxial fin; and
a recess extending from a top surface of the isolation structure, wherein the recess is between the first epitaxial fin and the second epitaxial fin.
2. The semiconductor device as claimed in claim 1 , wherein the gate stack comprises a metal material.
3. The semiconductor device as claimed in claim 1 , wherein materials of the first epitaxial fin and the second epitaxial fin are different from each other.
4. The semiconductor device as claimed in claim 1 , wherein the second epitaxial fin comprises silicon phosphide, silicon carbide, or a combination thereof.
5. The semiconductor device as claimed in claim 1 , wherein the first epitaxial fin comprises silicon germanium.
6. The semiconductor device as claimed in claim 1 , wherein an extending direction of the recess is substantially parallel to those of the first epitaxial fin and the second epitaxial fin.
7. The semiconductor device as claimed in claim 1 , further comprising:
a first contact over the semiconductor substrate and electrically connected to the first epitaxial fin;
a second contact over the semiconductor substrate and electrically connected to the second epitaxial fin; and
a dielectric layer over the semiconductor substrate and surrounding the first contact and the second contact.
8. The semiconductor device as claimed in claim 7 , wherein the first contact fills the recess, and the first epitaxial fin comprises a p-type epitaxial fin.
9. The semiconductor device as claimed in claim 7 , wherein the second contact fills the recess, and the second epitaxial fin comprises an n-type epitaxial fin.
10. The semiconductor device as claimed in claim 7 , wherein the dielectric layer fills the recess.
11. A semiconductor device, comprising:
a semiconductor substrate;
an isolation structure over the semiconductor substrate;
an n-type epitaxial fin and a p-type epitaxial fin over the semiconductor substrate, wherein the n-type epitaxial fin and the p-type epitaxial fin protrude from the isolation structure;
a gate stack over and traversing the n-type epitaxial fin and the p-type epitaxial fin; and
a recess extending from a top surface of the isolation structure, wherein the recess is between the n-type epitaxial fin and the p-type epitaxial fin.
12. The semiconductor device as claimed in claim 11 , wherein the gate stack comprises a metal material.
13. The semiconductor device as claimed in claim 11 , wherein an extending direction of the recess is substantially parallel to those of the n-type epitaxial fin and the p-type epitaxial fin.
14. The semiconductor device as claimed in claim 11 , further comprising:
a first contact over the semiconductor substrate and electrically connected to the p-type epitaxial fin;
a second contact over the semiconductor substrate and electrically connected to the n-type epitaxial fin; and
a dielectric layer over the semiconductor substrate and surrounding the first contact and the second contact.
15. The semiconductor device as claimed in claim 14 , wherein one of the first contact and the second contact fills the recess.
16. A method for forming a semiconductor device, comprising:
forming a first fin and a second fin over a semiconductor substrate;
forming an isolation structure over the semiconductor substrate to surround lower portions of the first fin and the second fin;
forming a gate stack over the first fin and the second fin, wherein the gate stack traverses the first fin and the second fin; and
sequentially forming a first epitaxial fin and a second epitaxial fin over the first fin and the second fin, respectively, wherein a recess is formed in the isolation structure after the first epitaxial fin is formed and before the second epitaxial fin is formed, and the recess is between the first epitaxial fin and the second epitaxial fin.
17. The method for forming a semiconductor device as claimed in claim 16 , wherein the step of sequentially forming the first epitaxial fin and the second epitaxial fin comprises:
forming a first mask layer over the second fin;
forming the first epitaxial fin over the first fin after the first mask layer is formed;
removing the first mask layer;
forming a second mask layer over the first epitaxial fin;
forming the second epitaxial fin over the second fin after the second mask layer is formed; and
removing the second mask layer.
18. The method for forming a semiconductor device as claimed in claim 17 , further comprising:
recessing the first fin before the first epitaxial fin is formed; and
recessing the second fin before the second epitaxial fin is formed.
19. The method for forming a semiconductor device as claimed in claim 18 , wherein the recess is formed after the second fin is recessed and before the second epitaxial fin is formed.
20. The method for forming a semiconductor device as claimed in claim 16 , further comprising forming a hard mask layer over the gate stack, wherein a second recess is formed in the hard mask layer simultaneously with the formation of the recess, and the second recess is substantially aligned with the recess.