LED leadframe or LED substrate, semiconductor device, and method for manufacturing LED leadframe or LED substrate
An LED leadframe or LED substrate includes a main body portion having a mounting surface for mounting an LED element thereover. A reflection metal layer serving as a reflection layer for reflecting light from the LED element is disposed over the mounting surface of the main body portion. The reflection metal layer comprises an alloy of platinum and silver or an alloy of gold and silver. The reflection metal layer efficiently reflects light emitted from the LED element and suppresses corrosion due to the presence of a gas, thereby capable of maintaining reflection characteristics of light from the LED element.
1. An LED resin-attached leadframe for mounting an LED element, comprising:
a main body portion having a die pad for mounting the LED element, and a lead portion disposed in spaced relation to the die pad;
a silver plating layer disposed on both of the die pad and the lead portion provided on the main body portion;
an indium plating layer disposed on the silver plating layer, the indium plating layer serving as a reflection layer for reflecting light from the LED element; and
an outer resin portion for reflecting light from the LED element surrounding a portion on which the LED element is mounted and filling the first area between the lead portion and the die pad,
wherein, on the leadframe, a first region is provided between the outer resin portion surrounding the portion on which the LED element is mounted and the die pad, the first region not being covered with the reflection metal layer,
wherein, on the leadframe, a second region is provided between the outer resin portion surrounding the portion on which the LED element is mounted and the lead portion, the second region not being covered with the reflection metal layer,
wherein a trench for enhancing the close bondability between the leadframe and the outer resin portion is formed on the surface of the leadframe, the trench being located between the leadframe and the outer resin portion, and
an inside of the trench and an area adjacent to the trench are not covered with the indium plating layer.
2. The LED resin-attached leadframe according to claim 1 , wherein
an underlying plating layer for enhancing the bondability between the main body portion and the silver plating layer is disposed between the body portion and the silver plating layer.
3. A semiconductor device comprising:
an LED resin-attached leadframe including a main body portion having a die pad for mounting an LED element, and a lead portion disposed in spaced relation to the die pad;
the LED element mounted over the die pad of the main body portion of the leadframe;
an electroconductive portion electrically connecting the leadframe and the LED element;
an encapsulating resin portion for encapsulating the LED element and the electroconductive portion; and
an outer resin portion for reflecting light from the LED element surrounding a portion on which the LED element is mounted and filling the first area between the lead portion and the die pad,
wherein a silver plating layer is disposed on both of the die pad and the lead portion provided on the main body portion of the LED leadframe,
wherein an indium plating layer serving as a reflection layer for reflecting light from the LED element is disposed on the silver plating layer,
wherein, on the leadframe, a first region is provided between the outer resin portion surrounding the portion on which the LED element is mounted and the die pad, the first region not being covered with the reflection metal layer,
wherein, on the leadframe, a second region is provided between the outer resin portion surrounding the portion on which the LED element is mounted and the lead portion, the second region not being covered with the reflection metal layer,
wherein a trench for enhancing the close bondability between the leadframe and the outer resin portion is formed on the surface of the leadframe, the trench being located between the leadframe and the outer resin portion, and
an inside of the trench and an area adjacent to the trench are not covered with the indium plating layer.
4. The semiconductor device according to claim 3 , wherein
an underlying plating layer for enhancing the bondability between the main body portion and the silver plating layer is disposed between the main body portion and the silver plating layer.
5. The semiconductor device according to claim 3 , wherein
the encapsulating resin portion comprises a silicone resin.
6. The semiconductor device according to claim 3 , further comprising
an outer resin portion surrounding the LED element and having a concave portion,
wherein the encapsulating resin portion is filled in the concave portion of the outer resin portion.
7. A method for manufacturing an LED resin-attached leadframe for mounting an LED element according to claim 1 , comprising:
a step of preparing the main body portion having a die pad for mounting the LED element and a lead portion disposed in spaced relation to the die pad;
a step of forming a silver plating layer on both of the die pad and the lead portion provided on the main body portion;
a step of forming an indium plating layer serving as a reflection layer on the silver plating layer, and
a step of forming the outer resin portion on the leadframe.
8. The method for manufacturing the LED resin-attached leadframe according to claim 7 , comprising
a step of providing an underlying plating layer for enhancing the bondability between the main body portion and the silver plating layer over the main body portion before the step of forming the silver plating layer.
9. A method for manufacturing a semiconductor device, comprising:
a step of fabricating a leadframe by the method for manufacturing the LED resin-attached leadframe according to claim 7 ;
a step of mounting the LED element over the die pad of the main body portion of the leadframe;
a step of connecting the LED element and the leadframe or substrate by an electroconductive portion; and
a step of resin-encapsulating the LED element and the electroconductive portion by an encapsulating resin.
10. The LED resin-attached leadframe according to claim 1 , wherein
the main body portion comprises a metal plate,
a first outer lead portion is formed at a bottom of the die pad, and a second outer lead portion is formed at a bottom of the lead portion, and
the first outer lead portion and the second outer lead portion are exposed to the outside of the outer resin portion, respectively.
11. The LED resin-attached leadframe according to claim 1 , wherein
on the die pad, the indium plating layer extends from a portion located adjacent an inner side of the trench to an inner end of the die pad facing the lead portion, and
on the lead portion, the indium plating layer extends from a portion located adjacent the inner side of the trench to an inner end of the lead portion facing the die pad.
12. The semiconductor device according to claim 3 , wherein
on the die pad, the indium plating layer extends from a portion located adjacent an inner side of the trench to an inner end of the die pad facing the lead portion, and
on the lead portion, the indium plating layer extends from a portion located adjacent the inner side of the trench to an inner end of the lead portion facing the die pad.