Method of manufacturing silicon carbide semiconductor device
A silicon carbide substrate having a main surface angled off in an off direction relative to a {0001} plane is prepared. A protruding first alignment mark is formed on the main surface of the silicon carbide substrate. A second alignment mark is formed on the first alignment mark by forming a silicon carbide epitaxial layer on the first alignment mark. The first alignment mark includes a first region and a second region, the second region being in contact with the first region and extending from the first region in the off direction. The second alignment mark includes a first portion formed on the first region and a second portion formed on the second region. An alignment step includes the step of capturing an image of the first portion while not including the second portion, and recognizing an edge of the first portion based on the image.
1. A method of manufacturing a silicon carbide semiconductor device, comprising the steps of:
preparing a silicon carbide substrate having a main surface angled off relative to a {0001} plane;
forming a protruding first alignment mark on said main surface of said silicon carbide substrate;
forming a second alignment mark on said first alignment mark by forming a silicon carbide epitaxial layer on said first alignment mark; and
performing alignment of said silicon carbide substrate using said second alignment mark,
said first alignment mark including a first region and a second region, said second region being in contact with said first region and extending from said first region in an off direction in which a <0001> direction is projected onto said main surface,
said first region including a short side along a direction parallel to said off direction, and a long side along a direction perpendicular to said off direction within said main surface,
said second alignment mark including a first portion formed on said first region and a second portion formed on said second region,
said step of performing alignment including the step of capturing an image of said first portion while not including said second portion, and recognizing an edge of said first portion based on said image.
2. The method of manufacturing a silicon carbide semiconductor device according to claim 1 , wherein
said second region is in contact with one end portion of said first region in the direction perpendicular to said off direction within said main surface.
3. The method of manufacturing a silicon carbide semiconductor device according to claim 1 , wherein
assuming that a width of said second region along said off direction is x, and a width of said first region along the direction perpendicular to said off direction within said main surface is y, x is not less than y/3 and not more than 2y.
4. The method of manufacturing a silicon carbide semiconductor device according to claim 1 , wherein
said second region is inclined from said off direction toward said first region.
5. The method of manufacturing a silicon carbide semiconductor device according to claim 1 , wherein
said second region includes a one side second region portion in contact with one end portion of said first region in the direction perpendicular to said off direction within said main surface, and an other side second region portion in contact with the other end portion.
6. The method of manufacturing a silicon carbide semiconductor device according to claim 5 , wherein
assuming that a width of each of said one side second region portion and said other side second region portion along said off direction is x, and a width of said first region along the direction perpendicular to said off direction within said main surface is y, x is not less than y/6 and not more than 3y.
7. The method of manufacturing a silicon carbide semiconductor device according to claim 1 , wherein
said first region has a rectangular shape when viewed from a normal direction of said main surface.
8. The method of manufacturing a silicon carbide semiconductor device according to claim 1 , wherein
said first region has a cross shape when viewed from a normal direction of said main surface.
9. The method of manufacturing a silicon carbide semiconductor device according to claim 1 , wherein
a height of said first alignment mark along a normal direction of said main surface is 0.2 times or more of a thickness of said silicon carbide epitaxial layer along said normal direction of said main surface.
10. The method of manufacturing a silicon carbide semiconductor device according to claim 1 , wherein
in said step of forming a protruding first alignment mark, said first alignment mark is formed on a dicing line on said main surface.
11. The method of manufacturing a silicon carbide semiconductor device according to claim 1 , further comprising the step of forming a first impurity region within said silicon carbide substrate after said step of preparing a silicon carbide substrate.
12. The method of manufacturing a silicon carbide semiconductor device according to claim 1 , further comprising the step of forming at least one of a second impurity region and an electrode in said silicon carbide epitaxial layer after said step of performing alignment.