Semiconductor device, manufacturing method of semiconductor device, semiconductor wafer, and electronic equipment
The present technology relates to a semiconductor device, a manufacturing method of a semiconductor device, a semiconductor wafer, and electronic equipment, which allow a semiconductor device, in which miniaturization is possible, to be provided. A semiconductor device includes a semiconductor substrate, a wiring layer that is formed on the semiconductor substrate, and a drive circuit that is provided in a circuit forming region of the semiconductor substrate. Then, the semiconductor device is configured to include a pad electrode that is electrically connected to the drive circuit and exposed from the side surface of the wiring layer, and an external connection terminal that is provided in side surfaces of the semiconductor substrate and the wiring layer, and is electrically connected to the pad electrode.
1. A semiconductor device comprising:
a semiconductor substrate;
a wiring layer that is formed on the semiconductor substrate;
a drive circuit that is provided in a circuit forming region of the semiconductor substrate;
a pad electrode that is electrically connected to the drive circuit and exposed from the side surface of the wiring layer;
an external connection terminal that is provided in side surfaces of the semiconductor substrate and the wiring layer, and is electrically connected to the pad electrode; and
a second semiconductor substrate that is bonded with a side surface on which the wiring layer of the semiconductor substrate is formed,
wherein the external connection terminal is continuously formed in a side surface of the semiconductor substrate to a side surface of the second semiconductor substrate.
2. The semiconductor device according to claim 1 , further comprising:
a photoelectric conversion unit that is provided in the circuit forming region; and
the wiring layer that is provided on a surface side opposite to a light receiving surface for the photoelectric conversion unit in the circuit forming region.
3. The semiconductor device according to claim 1 ,
wherein the external connection terminal is continuously formed in a light receiving surface side of the semiconductor substrate to a wiring layer of the second semiconductor substrate.
4. A semiconductor device comprising:
a semiconductor substrate;
a wiring layer that is formed on the semiconductor substrate;
a drive circuit that is provided in a circuit forming region of the semiconductor substrate;
a pad electrode that is electrically connected to the drive circuit and exposed from the side surface of the wiring layer; and
an external connection terminal that is provided in side surfaces of the semiconductor substrate and the wiring layer, and is electrically connected to the pad electrode,
wherein parts other than an exposed surface of the external connection terminal are embedded in the semiconductor substrate and the wiring layer on the semiconductor substrate, and
wherein the pad electrode is electrically connected to the drive circuit through the external connection terminal.
5. A semiconductor wafer comprising:
a plurality of circuit forming regions;
a scribe region that is arranged to surround the circuit forming regions;
a drive circuit that is provided in the circuit forming regions;
a pad electrode that is electrically connected to the drive circuit and formed from an end of the circuit forming region to the scribe region;
an opening portion that is formed on the pad electrode; and
a conductor layer that is formed on a side surface and a lower surface of the opening portion and is electrically connected to the drive circuit.
6. The semiconductor wafer according to claim 5 , further comprising:
a photoelectric conversion unit that is provided in each of the circuit forming regions;
the drive circuit that is provided on a surface side opposite to a light receiving surface for the photoelectric conversion unit in each of the circuit forming regions;
an opening portion that is formed from an end of the circuit forming regions to a scribe region, to a depth which is equal to or greater than a depth of the drive circuit from the light receiving surface side; and
a conductor layer that is formed in a side surface and a lower surface of the opening portion, and is electrically connected to the drive circuit.
7. A manufacturing method of a semiconductor device, comprising:
a process of forming a drive circuit in a circuit forming region of a semiconductor substrate;
a process of forming a wiring layer on the semiconductor substrate;
a process of forming a pad electrode in the wiring layer;
a process of forming an opening portion for exposing the pad electrode in a surface, from the circuit forming region to a scribe region;
a process of forming a conductor layer in a side surface of the opening portion; and
a process of singulating the circuit forming region in the scribe region.
8. The manufacturing method of a semiconductor device according to claim 7 , further comprising:
engraving further the opening portion after the opening portion for exposing the pad electrode in a surface is formed; and
forming the conductor layer in the engraved opening portion.
9. A manufacturing method of a semiconductor device, comprising:
a process of forming a drive circuit in a circuit forming region of a semiconductor substrate;
a process of forming a wiring layer on a semiconductor substrate;
a process of forming a pad electrode in the wiring layer;
a process of forming a penetrating electrode which penetrates the semiconductor substrate and is connected to the pad electrode;
a process of forming an opening portion for exposing the pad electrode in a surface and exposing the penetrating electrode in a side surface, from the circuit forming region to the scribe region; and
a process of singulating the circuit forming region in the scribe region.
10. Electronic equipment comprising:
a semiconductor device including a semiconductor substrate, a wiring layer that is formed on the semiconductor substrate, a drive circuit that is provided in a circuit forming region of the semiconductor substrate, a pad electrode that is electrically connected to the drive circuit and exposed from the side surface of the wiring layer, and an external connection terminal that is provided in side surfaces of the semiconductor substrate and the wiring layer, and is electrically connected to the pad electrode; and
a signal processing circuit that processes an output signal of the semiconductor device.
11. A semiconductor device comprising:
a first semiconductor substrate and a second semiconductor substrate,
wherein the first semiconductor substrate includes:
a wiring layer that is formed on the first semiconductor substrate;
a drive circuit that is provided in a circuit forming region of the first semiconductor substrate; and
an external connection terminal that is provided in side surfaces of the first semiconductor substrate and the wiring layer,
wherein the second semiconductor substrate includes:
a wiring layer that is formed on the second semiconductor substrate;
a drive circuit that is provided in a circuit forming region of the second semiconductor substrate; and
an external connection terminal that is provided in side surfaces of the second semiconductor substrate and the wiring layer, and
wherein the first semiconductor substrate and the second semiconductor substrate are laminated.
12. The semiconductor device according to claim 11 , wherein the first semiconductor substrate includes a photoelectric conversion unit that is provided in the circuit forming region, and an insulating layer that covers an entire surface of the semiconductor substrate on a light receiving surface side of the photoelectric conversion unit.
13. The semiconductor device according to claim 11 , wherein the second semiconductor substrate includes a drive circuit of the photoelectric conversion unit in the circuit forming region.
14. The semiconductor device according to claim 11 , further comprising:
a third semiconductor substrate in addition to the first semiconductor substrate and the second semiconductor substrate,
wherein the third semiconductor substrate includes:
a wiring layer that is formed on the third semiconductor substrate;
a drive circuit that is provided in a circuit forming region of the third semiconductor substrate; and
an external connection terminal that is provided in side surfaces of the third semiconductor substrate and the wiring layer, and
wherein the first semiconductor substrate, the second semiconductor substrate, and the third semiconductor substrate are laminated.
15. A manufacturing method of a semiconductor device, comprising:
a process of forming a drive circuit in a circuit forming region of a first semiconductor substrate;
a process of forming a wiring layer on the first semiconductor substrate;
a process of forming an opening portion in a scribed region of the first semiconductor substrate;
a process of forming a conductor layer in the opening portion of the first semiconductor substrate;
a process of forming a drive circuit in a circuit forming region of a second semiconductor substrate;
a process of forming a wiring layer on the second semiconductor substrate;
a process of forming an opening portion in a scribed region of the second semiconductor substrate;
a process of forming a conductor layer in the opening portion of the second semiconductor substrate;
a process of laminating the first semiconductor substrate and the second semiconductor substrate; and
a process of singulating the first semiconductor substrate and the second semiconductor substrate in the scribe region.