Switching components and memory units
Some embodiments include a switching component which includes a selector region between a pair of electrodes. The selector region contains silicon doped with one or more of nitrogen, oxygen, germanium and carbon. Some embodiments include a memory unit which includes a memory cell and a select device electrically coupled to the memory cell. The select device has a selector region between a pair of electrodes. The selector region contains semiconductor doped with one or more of nitrogen, oxygen, germanium and carbon. The select device has current versus voltage characteristics which include snap-back voltage behavior.
1. A switching component, comprising:
a first electrode;
a selector region over the first electrode;
a second electrode over the selector region;
wherein the selector region comprises a stack of alternating first and second materials, with at least one of the first and second materials comprising semiconductor; and
wherein one of the first and second materials comprises silicon doped with carbon or germanium to a concentration within a range of from greater than 0 atomic percent to about 50 atomic percent; and wherein the other of the first and second materials consists of silicon.
2. The switching component of claim 1 wherein the selector region comprises the material comprising silicon doped with carbon or germanium directly against each of the electrodes.
3. The switching component of claim 1 wherein the selector region comprises the material consisting of silicon directly against each of the electrodes.
4. The switching component of claim 1 wherein said one of the first and second materials comprises silicon doped with carbon.
5. The switching component of claim 1 wherein said one of the first and second materials comprises silicon doped with germanium.
6. A memory unit, comprising:
a memory cell;
a select device electrically coupled to the memory cell; the select device comprising a selector region between a pair of electrodes;
wherein the selector region comprises a stack of alternating first and second materials;
wherein one of the first and second materials comprises silicon doped with carbon or germanium to a concentration within a range of from greater than 0 atomic percent to about 50 atomic percent; and wherein the other of the first and second materials consists of silicon; and
wherein the select device has current versus voltage characteristics which include snap-back voltage behavior.
7. The memory unit of claim 6 wherein both electrodes of said pair consist of carbon.
8. The memory unit of claim 6 wherein said one of the first and second materials comprises silicon doped with carbon.
9. The memory unit of claim 6 wherein said one of the first and second materials comprises silicon doped with germanium.