Peeling method and method of manufacturing semiconductor device
There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer ( 11 ) and a second material layer ( 12 ) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer ( 12 ) or an interface thereof.
1. A display device comprising:
a first flexible substrate;
a first bonding layer on and in contact with the first flexible substrate;
a film comprising an organic material, the film on and in contact with the first bonding layer;
a first insulating film on and in contact with the film;
a thin film transistor over the first insulating film, the thin film transistor including a semiconductor film and a gate electrode with a gate insulating film interposed therebetween;
a second insulating film over the thin film transistor;
a pixel electrode over the second insulating film, the pixel electrode being electrically connected to the thin film transistor;
a bank over an edge portion of the pixel electrode;
a light emitting layer comprising an organic light emitting material over the pixel electrode, the light emitting layer capable of emitting red light, green light, or blue light;
a second electrode over the light emitting layer; and
a third insulating film on and in contact with the second electrode.
2. The display device according to claim 1 , wherein the first insulating film comprises silicon and oxygen.
3. The display device according to claim 1 , wherein the semiconductor film comprises silicon.
4. The display device according to claim 1 , wherein the second insulating film comprises resin.
5. The display device according to claim 1 , wherein the pixel electrode is an anode.
6. A display device comprising:
a first flexible substrate;
a first bonding layer on and in contact with the first flexible substrate;
a first film comprising an organic material, the first film on and in contact with the first bonding layer;
a first insulating film on and in contact with the film;
a thin film transistor over the first insulating film, the thin film transistor including a semiconductor film and a gate electrode with a gate insulating film interposed therebetween;
a second insulating film over the thin film transistor;
a pixel electrode over the second insulating film, the pixel electrode being electrically connected to the thin film transistor;
a bank over an edge portion of the pixel electrode;
a light emitting layer comprising an organic light emitting material over the pixel electrode the light emitting layer capable of emitting red light, green light, or blue light;
a second electrode over the light emitting layer;
an third insulating film on and in contact with the second electrode;
a second bonding layer over the third insulating film; and
a second film comprising an organic material, the second film on and in contact with the second bonding layer.
7. The display device according to claim 6 , wherein the first insulating film comprises silicon and oxygen.
8. The display device according to claim 6 , wherein the semiconductor film comprises silicon.
9. The display device according to claim 6 , wherein the second insulating film comprises resin.
10. The display device according to claim 6 , wherein the pixel electrode is an anode.
11. A display device comprising:
a first flexible substrate;
a first bonding layer on and in contact with the first flexible substrate;
a film comprising an organic material, the film on and in contact with the first bonding layer;
a first insulating film on and in contact with the film;
a first thin film transistor in a pixel portion over the first insulating film, the first thin film transistor including a first semiconductor film and a first gate electrode with a first gate insulating film interposed therebetween;
a second thin film transistor in a driver circuit portion over the first insulating film, the second thin film transistor including a second semiconductor film and a second gate electrode with a second gate insulating film interposed therebetween;
a second insulating film over the first thin film transistor and the second thin film transistor;
a pixel electrode over the second insulating film, the pixel electrode being electrically connected to the first thin film transistor;
a bank over an edge portion of the pixel electrode;
a light emitting layer comprising an organic light emitting material over the pixel electrode;
a second electrode over the light emitting layer and the second thin film transistor; and
a third insulating film on and in contact with the second electrode.
12. The display device according to claim 11 , wherein the first insulating film comprises silicon and oxygen.
13. The display device according to claim 11 , wherein each of the first semiconductor film and the second semiconductor film comprises silicon.
14. The display device according to claim 11 , wherein the second insulating film comprises resin.
15. The display device according to claim 11 , wherein the pixel electrode is an anode.
16. The display device according to claim 11 , wherein the light emitting layer is capable of emitting red light, green light, or blue light.
17. A display device comprising:
a first flexible substrate;
a first bonding layer on and in contact with the first flexible substrate;
a film comprising an organic material, the film on and in contact with the first bonding layer;
a first insulating film on and in contact with the film;
a first thin film transistor in a pixel portion over the first insulating film, the first thin film transistor including a first semiconductor film and a first gate electrode with a first gate insulating film interposed therebetween;
a second thin film transistor in a driver circuit portion over the first insulating film, the second thin film transistor including a second semiconductor film and a second gate electrode with a second gate insulating film interposed therebetween;
a second insulating film over the first thin film transistor and the second thin film transistor;
a pixel electrode over the second insulating film, the pixel electrode being electrically connected to the first thin film transistor;
a bank over an edge portion of the pixel electrode;
a light emitting layer comprising an organic light emitting material over the pixel electrode;
a second electrode over the light emitting layer and the second thin film transistor;
a third insulating film on and in contact with the second electrode;
a second bonding layer over the third insulating film; and
a second film comprising an organic material, the second film on and in contact with the second bonding layer.
18. The display device according to claim 17 , wherein the first insulating film comprises silicon and oxygen.
19. The display device according to claim 17 , wherein each of the first semiconductor film and the second semiconductor film comprises silicon.
20. The display device according to claim 17 , wherein the second insulating film comprises resin.
21. The display device according to claim 17 , wherein the pixel electrode is an anode.
22. The display device according to claim 17 , wherein the light emitting layer is capable of emitting red light, green light, or blue light.