Programming and erasure schemes for analog memory cells

1. A method for data storage, comprising:

in a memory that includes multiple memory cells, applying to a group of the memory cells a programming operation that sets the memory cells in the group to respective threshold values dependent upon received data;

completing the programming operation by verifying the memory cells in the group have reached their respective threshold value;

executing a separate verification operation to assess a performance measure of the programming operation applied to the group of the memory cells, wherein executing the separate verification operation includes determining a duration of the programming operation and determining the performance measure dependent upon a comparison of the duration of the programming operation to a predefined range of programming times; and

assessing a health status of a memory block in the memory that includes the group, based on the assessed performance measure of the programming operation.

2. The method according to claim 1 , further comprising determining that the performance measure deviates from the predefined range of programming times in response to a determination that the duration of the programming operation is less than a minimum programming duration.

3. The method according to claim 1 , wherein assessing the health status further comprises marking the memory block as bad when the performance measure deviates from the predefined range of programming times.

4. The method according to claim 1 , wherein assessing the health status comprises marking the memory block as subject to additional evaluation when the performance measure deviates from the predefined range of programming times.

5. The method according to claim 1 , wherein assessing the health status comprises setting a storage configuration for subsequent data storage in the memory block depending on the performance measure.

6. An apparatus for data storage, comprising:

a memory, which includes multiple memory cells; and

storage circuitry, which is configured to:

apply to a group of the memory cells a programming operation that sets the memory cells in the group to respective threshold values dependent upon received data;

complete the programming operation by verifying the memory cells in the group have reached their respective threshold value;

execute a separate verification operation to assess a performance measure of the programming operation applied to the group of the memory cells; and

assess a health status of a memory block in the memory that includes the group, based on the assessed performance measure of the programming operation;

wherein to execute the separate verification operation, the storage circuit is further configured to:

determine a duration of the programming operation; and

determine the performance measure dependent upon a comparison of the duration of the programming operation to a predefined range of programming times.

7. The apparatus according to claim 6 , wherein the storage circuitry is further configured to determine that the performance measure deviates from the predefined range of programming times in response to a determination that the duration of the programming operation is less than a minimum programming duration.

8. The apparatus according to claim 6 , wherein the storage circuitry is further configured to mark the memory block as bad when the performance measure deviates from the predefined range of programming times.

9. The apparatus according to claim 6 , wherein the storage circuitry is further configured to mark the memory block as subject to additional evaluation when the performance measure deviates from the predefined range of programming times.

10. The apparatus according to claim 6 , wherein the storage circuitry is further configured to set a storage configuration for subsequent data storage in the memory block depending on the performance measure.

11. A computer-accessible non-transitory storage medium having program instructions stored therein that, in response to execution by a processor, cause the processor to perform operations comprising:

applying to a group of the memory cells a programming operation that sets the memory cells in the group to respective threshold values dependent upon received data;

completing the programming operation by verifying the memory cells in the group have reached their respective threshold value;

executing a separate verification operation to assess a performance measure of the programming operation applied to the group of the memory cells, wherein executing the separate verification operation includes determining a duration of the programming operation and determining the performance measure dependent upon a comparison of the duration of the programming operation to a predefined range of programming times; and

assessing a health status of a memory block in the memory that comprises the group, based on the assessed performance measure of the programming operation.

12. The computer-accessible non-transitory storage medium of claim 11 , wherein the operations further comprise determining that the performance measure deviates from the predefined range of programming times in response to a determination that the duration of the programming operation is less than a minimum programming duration.

13. The computer-accessible non-transitory storage medium of claim 11 , wherein assessing the health status comprises marking the memory block as bad when the performance measure deviates from the predefined range of programming times.

14. The computer-accessible non-transitory storage medium of claim 11 , wherein assessing the health status comprises marking the memory block as subject to additional evaluation when the performance measure deviates from the predefined range of programming times.

15. The computer-accessible non-transitory storage medium of claim 11 , wherein assessing the health status comprises setting a storage configuration for subsequent data storage in the memory block depending on the performance measure.