Composition for forming resist underlayer film and patterning process
The invention provides a composition for forming a resist underlayer film including: as a component (A), a silicon-containing compound obtained by hydrolysis and/or condensation of one or more kinds of silicon compounds represented by the following general formula (A-1). There can be provided a composition for forming a resist underlayer film having etching selectivity relative to a conventional organic film and a silicon-containing film and favorable pattern adhesiveness relative to fine pattern even in a complicated patterning process. R 1A a1 R 2A a2 R 3A a3 Si(OR 0A ) (4-a1-a2-a3) (A-1)
1. A composition for forming a resist underlayer film, comprising:
as a component (A), a silicon-containing compound obtained by hydrolysis and/or condensation of one or more kinds of silicon compounds represented by the following general formula (A-1), one or more kinds of silicon compounds represented by the following general formula (A-2), and one or more kinds of metallic compounds represented by the following general formula (A-3),
R 1A a1 R 2A a2 R 3A a3 Si(OR 0A ) (4-a1-a2-a3) (A-1)
wherein, R OA represents a hydrocarbon group having 1 to 6 carbon atoms; any one or more of R 1A , R 2A and R 3A represents an organic group having nitrogen atom, sulfur atom, phosphorus atom, or iodine atom, and the other(s) are a hydrogen atom or a monovalent organic group having 1 to 30 carbon atoms; and a1, a2 and a3 represent 0 or 1 and satisfy 1≦a1+a2+a3≦3,
R 5A a5 R 6A a6 R 7A a7 Si(OR 4A ) (4-a5-a6-a7) (A-2)
wherein, R 4A represents a hydrocarbon group having 1 to 6 carbon atoms; each of R 5A , R 6A and R 7A represents a hydrogen atom or a monovalent organic group having 1 to 30 carbon atoms; and a5, a6 and a7 represent 0 or 1 and satisfy 0≦a5+a6+a7≦3,
L(OR 8A ) a8 (OR 9A ) a9 (O) a10 (A-3)
wherein, R 8A and R 9A represent an organic group having 1 to 30 carbon atoms; a8, a9 and a10 represent an integer of 0 or more and a8+a9+2×a10 is the same number as the number determined by valency of L; and L is an element belonging to groups of III, IV, or V in a periodic table except for carbon and silicon, and
as a component (B), a metal-containing compound obtained by hydrolysis and/or condensation of one or more kinds of metallic compounds represented by the following general formula (B-1),
M(OR 0B ) b0 (OR 1B ) b1 (O) b2 (B-1)
wherein, R OB and R 1B represent an organic group having 1 to 10 carbon atoms, b0, b1 and b2 represent an integer of 0 or more and b0+b1+2×b2 is the same number as the number determined by a valency of M, and M is one selected from the group consisting of aluminum, germanium, titanium, zirconium and hafnium.
2. The composition for forming a resist underlayer film according to claim 1 , wherein any one or more of R 1A , R 2A and R 3A in the general formula (A-1) is an organic group containing tertiary sulfonium, secondary iodonium, quaternary phosphonium, or quaternary ammonium having non-nucleophilic counter anion.
3. The composition for forming a resist underlayer film according to claim 1 , wherein any one or more of R 1A , R 2A and R 3A in the general formula (A-1) is an organic group containing primary amine, secondary amine, tertiary amine, or heterocycle.
4. The composition for forming a resist underlayer film according to claim 1 , wherein the component (B) contains a metal-containing compound obtained by hydrolysis and/or condensation of one or more kinds of metallic compounds represented by the general formula (B-1) and one or more kinds of silicon compounds represented by the following general formula (B-2),
R 4B b4 R 5B b5 R 6B b6 Si(OR 3B ) (4-b4-b5-b6) (B-2)
wherein, R 3B represents a hydrocarbon group having 1 to 6 carbon atoms; each of R 4B , R 5B and R 6B represents a hydrogen atom or a monovalent organic group having 1 to 30 carbon atoms; and b4, b5 and b6 represent 0 or 1 and satisfy 1≦b4+b5+b6≦3.
5. The composition for forming a resist underlayer film according to claim 1 , wherein the mass ratio of the component (A) and the component (B) satisfies component (B)≧component (A).
6. The composition for forming a resist underlayer film according to claim 1 , wherein L in the general formula (A-3) is any element of boron, aluminum, gallium, yttrium, germanium, titanium, zirconium, hafnium, bismuth, tin, phosphorus, vanadium, arsenic, antimony, niobium, or tantalum.
7. A patterning process on a body to be processed comprising: forming an organic underlayer film on a body to be processed by using an application-type organic underlayer film composition; forming a resist underlayer film on the organic underlayer film by using the composition for forming a resist underlayer film according to claim 1 ; forming a resist upper layer film on the resist underlayer film by using a composition for forming a resist upper layer film; forming a pattern on the resist upper layer film; transferring the pattern on the resist underlayer film by using the resist upper layer film having the formed pattern as a mask; transferring a pattern on the organic underlayer film by using the resist underlayer film having the transferred pattern as a mask; and transferring a pattern on the body to be processed by using the organic underlayer film having the transferred pattern as a mask.
8. The patterning process according to claim 7 , wherein the body to be processed is a semiconductor device substrate coated, as a layer to be processed, with any of metal film, metal carbide film, metal oxide film, metal nitride film, metal oxycarbide film, and metal oxynitride film.
9. The patterning process according to claim 7 , wherein a metal that constitutes the body to be processed is silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, copper, aluminum, indium, gallium, arsenic, palladium, iron, tantalum, iridium, molybdenum or an alloy of these metals.
10. The patterning process according to claim 7 , a method for forming a pattern on the resist upper layer film is any of the method of photolithography with a wavelength of 300 nm or less or EUV beam, the method of a direct drawing with electron beam, the directed self assembly method and the nano-imprinting lithography method.
11. A patterning process on a body to be processed comprising: forming an organic hard mask with carbon as a main component on a body to be processed by a CVD method; forming a resist underlayer film on the organic hard mask by using the composition for forming a resist underlayer film according to claim 1 ; forming a resist upper layer film on the resist underlayer film by using a composition for forming a resist upper layer film; forming a pattern on the resist upper layer film; transferring a pattern on the resist underlayer film by using the resist upper layer film having the formed pattern as a mask; transferring a pattern on the organic hard mask by using the resist underlayer film having the transferred pattern as a mask; and transferring a pattern on the body to be processed by using the organic hard mask having the transferred pattern as a mask.
12. The patterning process according to claim 11 , wherein the body to be processed is a semiconductor device substrate coated, as a layer to be processed, with any of metal film, metal carbide film, metal oxide film, metal nitride film, metal oxycarbide film, and metal oxynitride film.
13. The patterning process according to claim 11 , wherein a metal that constitutes the body to be processed is silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, copper, aluminum, indium, gallium, arsenic, palladium, iron, tantalum, iridium, molybdenum or an alloy of these metals.
14. The patterning process according to claim 11 , a method for forming a pattern on the resist upper layer film is any of the method of photolithography with a wavelength of 300 nm or less or EUV beam, the method of a direct drawing with electron beam, the directed self assembly method and the nano-imprinting lithography method.